Datasheet (TSM080N03PQ56)

TSM080N03PQ56
30V N-Channel Power MOSFET
PDFN56
Key Parameter Performance
Pin Definition:
1. Source
8. Drain
2. Source
7. Drain
3. Source
6. Drain
4. Gate
5. Drain
Parameter
Value
Unit
VDS
30
V
RDS(on) (max)
VGS = 10V
8
VGS = 4.5V
12.5
Qg
nC
Block Diagram
Ordering Information
●
7.5
mΩ
Part No.
Package
Packing
TSM080N03PQ56 RLG
PDFN56
2.5kpcs / 13” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which
contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds
N-Channel MOSFET
Absolute Maximum Ratings (Tc = 25℃ unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
55
A
35
A
IDM
220
A
EAS
45
mJ
Power Dissipation @ TC = 25℃
PD
54
W
Operating Junction Temperature
TJ
-55 to +150
℃
TSTG
-55 to +150
℃
Symbol
Limit
Unit
Thermal Resistance - Junction to Case
RӨJC
2.3
Thermal Resistance - Junction to Ambient
RӨJA
62
Tc = 25℃
Continuous Drain Current
Pulsed Drain Current
Tc = 100℃
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Storage Temperature Range
ID
Thermal Performance
Parameter
1/5
℃/W
Version: A14
TSM080N03PQ56
30V N-Channel Power MOSFET
Electrical Specifications (TC = 25℃ unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
BVDSS
30
--
--
V
--
6.5
8
--
9.5
12.5
1
1.6
2.5
--
--
1
--
--
10
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
VGS = 0V, ID = 250µA
VGS = 10V, ID = 16A
VGS = 4.5V, ID = 8A
VDS = VGS, ID = 250µA
RDS(on)
VGS(TH)
VDS = 30V, VGS = 0V
mΩ
V
Zero Gate Voltage Drain Current
VDS = 24V, VGS = 0V,
TJ = 125℃
IDSS
Gate Body Leakage
VGS = ±20V, VDS = 0V
IGSS
--
--
±100
nA
VDS = 10V, ID = 8A
gfs
--
14
--
S
Qg
--
7.5
--
Qgs
--
1.3
--
Qgd
--
4.5
--
Ciss
--
750
--
Coss
--
150
--
Crss
--
110
--
td(on)
--
4.8
--
tr
--
12.5
--
td(off)
--
27.6
--
tf
--
8.2
--
IS
--
--
55
A
ISM
--
--
220
A
VSD
--
--
1
V
Forward Transconductance
(Note 3)
µA
Dynamic
Total Gate Charge (Note 3,4)
Gate-Source Charge
Gate-Drain Charge
(Note 3,4)
(Note 3,4)
VDS = 15V, ID = 20A,
VGS = 4.5V
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
nC
pF
Switching
Turn-On Delay Time (Note 3,4)
Turn-On Rise Time
(Note 3,4)
Turn-Off Delay Time
(Note 3,4)
VDD = 15V, ID = 15A,
VGS = 10V, RGEN =3.3Ω
Turn-Off Fall Time (Note 3,4)
ns
Source-Drain Diode Ratings and Characteristic
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulse Drain-Source Diode
Forward Current
Diode-Source Forward Voltage
Integral reverse diode in
the MOSFET
VGS = 0V, IS = 1A
Note:
1.
Pulse width limited by safe operating area
2.
L = 0.1mH, IAS = 30A, VDD = 25V, RG = 25Ω, Starting TJ = 25℃
3.
Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%
4.
Switching time is essentially independent of operating temperature.
2/5
Version: A14
TSM080N03PQ56
30V N-Channel Power MOSFET
Electrical Characteristics Curves
Normalized RDS(on) vs. T J
Normalized On Resistance
ID, Continuous Drain Current (A)
Continuous Drain Current vs. Tc
TC, Case Temperature (℃)
TJ, Junction Temperature (℃)
Gate Charge Waveform
VGS, Gate to Source Voltage (V)
Normalized Gate Threshold Voltage
Normalized Vth vs. TJ
Qg, Gate Charge (nC)
Normalized Transient Impedance
Maximum Safe Operation Area
Normalized Thermal Response
ID, Continuous Drain Current (A)
TJ, Junction Temperature (℃)
VDS, Drain to Source Voltage (V)
Square Wave Pulse Duration (s)
3/5
Version: A14
TSM080N03PQ56
30V N-Channel Power MOSFET
PDFN56 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
4/5
Version: A14
TSM080N03PQ56
30V N-Channel Power MOSFET
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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5/5
Version: A14