TSM7N65A_B14

TSM7N65A
650V N-Channel Power MOSFET
ITO-220
Key Parameter Performance
Pin Definition:
1. Gate
2. Drain
3. Source
Parameter
Value
Unit
VDS
650
V
RDS(on) (max)
1.45
Ω
Qg
27.8
nC
Block Diagram
Features
●
Low RDS(ON) 1.2Ω (Typ.)
●
●
●
Low gate charge typical @ 27.8nC (Typ.)
Low Crss typical @ 15pF (Typ.)
100% Avalanche Tested
Ordering Information
Part No.
Package
Packing
ITO-220
50pcs / Tube
TSM7N65ACI C0
N-Channel MOSFET
Absolute Maximum Ratings (TA=25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
650
V
Gate-Source Voltage
VGS
±30
V
7
A
4.2
A
Tc = 25ºC
Continuous Drain Current
Pulsed Drain Current
Tc = 100ºC
(Note 1)
Single Pulse Avalanche Energy
ID
IDM
28
A
(Note 2)
EAS
160
mJ
o
PTOT
40
W
TJ
150
ºC
TSTG
-55 to +150
Symbol
Limit
Total Power Dissipation @ TC = 25 C
Operating Junction Temperature
Storage Temperature Range
o
C
Thermal Performance
Parameter
RӨJC
Thermal Resistance - Junction to Case
RӨJA
Thermal Resistance - Junction to Ambient
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Unit
3.1
o
65
o
C/W
C/W
Version: B14
TSM7N65A
650V N-Channel Power MOSFET
Electrical Specifications (TA=25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
BVDSS
650
--
--
V
Drain-Source On-State Resistance
VGS = 10V, ID = 3A
RDS(ON)
--
1.2
1.45
Ω
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VGS(TH)
2.0
3.0
4.0
V
Zero Gate Voltage Drain Current
VDS = 650V, VGS = 0V
IDSS
--
--
1
µA
Gate Body Leakage
VGS = ±30V, VDS = 0V
IGSS
--
--
±100
nA
Qg
--
27.8
--
Qgs
--
5.7
--
Qgd
--
8.8
--
Ciss
--
1406
--
Coss
--
114
--
Crss
--
15
--
td(on)
--
25
--
tr
--
57
--
td(off)
--
83
--
tf
--
61
--
Dynamic
(Note 4,5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 480V, ID = 6A,
VGS = 10V
Input Capacitance
Output Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Reverse Transfer Capacitance
Switching
nC
pF
(Note 4,5)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
VGS = 10V, ID = 6A,
VDD = 300V, RG =25Ω
Turn-Off Fall Time
ns
Source-Drain Diode Ratings and Characteristic
Source Current
Integral reverse diode in
IS
--
--
7
A
Source Current (Pulse)
the MOSFET
ISM
--
--
28
A
Diode Forward Voltage
IS = 3A, VGS = 0V
VSD
--
--
1.5
V
Note:
1. Limited by maximum junction temperature
2. VDD = 50V, IAS=5A, L=12mH, RG =25Ω, Starting TJ=25ºC
3. ISD≤7A, di/dt≤200A/µs, VDD≤BVDSS, Starting TJ=25ºC
4. Pulse test: pulse width ≤300µs, duty cycle ≤2%
5. Essentially Independent of Operating Temperature
2/6
Version: B14
TSM7N65A
650V N-Channel Power MOSFET
Electrical Characteristics Curve (Tc=25oC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
Capacitance
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/6
Version: B14
TSM7N65A
650V N-Channel Power MOSFET
Electrical Characteristics Curve (Tc=25oC, unless otherwise noted)
Threshold Voltage vs. Junction Temperature
Maximum Safe Operating Area
Normalized Thermal Transient Impedance Curve
4/6
Version: B14
TSM7N65A
650V N-Channel Power MOSFET
ITO-220 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y
M
L
= Year Code
= Month Code for Halogen Free Product
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep,
J=Oct, K=Nov, L=Dec)Year Code
= Lot Code
5/6
Version: B14
TSM7N65A
650V N-Channel Power MOSFET
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
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merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
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Version: B14