TSC TSM35N10

TSM35N10
100V N-Channel Power MOSFET
TO-252
(DPAK)
PRODUCT SUMMARY
Pin Definition:
1. Gate
2. Drain
3. Source
Features
●
●
●
●
VDS (V)
RDS(on)(mΩ)
ID (A)
100
37 @ VGS =10V
32
Block Diagram
Advanced Trench Technology
Low RDS(ON) 37mΩ (Max.)
Low gate charge typical @ 34nC (Typ.)
Low Crss typical @ 45pF (Typ.)
Ordering Information
Part No.
Package
Packing
TSM35N10CP ROG
TO-252
2.5Kpcs / 13” Reel
Note: “G” denote for Halogen Free Product
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TC=25°C
TC=70°C
TA=25°C
TA=70°C
Drain Current-Pulsed Note 1
Avalanche Current, L=0.1mH
Avalanche Energy, L=0.1mH
Symbol
Limit
Unit
VDS
VGS
100
±20
32
26
V
V
ID
IDM
IAS, IAR
EAS, EAR
TC=25°C
Maximum Power Dissipation
TC=70°C
TA=25°C
TA=70°C
Storage Temperature Range
Operating Junction Temperature Range
TSTG
TJ
53.3
2
1.3
-55 to +150
-55 to +150
Symbol
Limit
PD
A
5
4
70
35
61
83.3
A
A
mJ
W
°C
°C
* Limited by maximum junction temperature
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
RӨJC
Thermal Resistance - Junction to Ambient
RӨJA
1/6
Unit
1.5
o
62
o
C/W
C/W
Version: B13
TSM35N10
100V N-Channel Power MOSFET
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
VGS = 0V, ID = 250uA
BVDSS
100
--
--
V
VGS = 10V, ID = 10A
RDS(ON)
--
30
37
mΩ
VGS = 4.5V, ID = 10A
RDS(ON)
--
32
42
mΩ
Gate Threshold Voltage
VDS = VGS, ID = 250uA
VGS(TH)
1
2
3
V
Zero Gate Voltage Drain Current
VDS = 100V, VGS = 0V
IDSS
--
--
1
uA
Gate Body Leakage
VGS = ±20V, VDS = 0V
IGSS
--
--
±100
nA
Qg
--
34
--
Qgs
--
6
--
Qgd
--
9
--
Ciss
--
1598
--
Coss
--
132
--
Crss
--
45
--
td(on)
--
7
--
tr
--
7
--
td(off)
--
29
--
tf
--
7
--
VSD
--
0.7
--
V
tfr
--
32
--
nS
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 50V, ID = 10A,
VGS = 10V
Input Capacitance
Output Capacitance
VDS = 30V, VGS = 0V,
f = 1.0MHz
Reverse Transfer Capacitance
nC
pF
Switching
Turn-On Delay Time
Turn-On Rise Time
VGS = 10V, VDS = 50V,
Turn-Off Delay Time
RG = 3Ω
Turn-Off Fall Time
nS
Drain-Source Diode Characteristics and Maximum Rating
Drain-Source Diode Forward
Voltage
VGS=0V, IS=10A
Reverse Recovery Time
IS = 10A, TJ=25 C
o
dI/dt = 500A/us
Reverse Recovery Charge
Qfr
-200
-nC
Notes:
1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
2. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal
reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA
is determined by the user's board design. RθJA shown below for single device operation on FR-4 in still air
2/6
Version: B13
TSM35N10
100V N-Channel Power MOSFET
Electrical Characteristics Curve (Tc = 25oC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Gate-Source Voltage
Gate Charge
On-Resistance vs. Junction Temperature
Capacitance
3/6
Version: B13
TSM35N10
100V N-Channel Power MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Maximum Safe Operating Area
Threshold Voltage vs. Temperature
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/6
Version: B13
TSM35N10
100V N-Channel Power MOSFET
TO-252 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
5/6
Version: B13
TSM35N10
100V N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
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relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
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Version: B13