5A 600V 4 circuits Thyristor array SLA0201 ■ Features External Dimensions (Unit: mm) 16.0± 0.2 13.0± 0.2 9.9± 0.2 4.8± 0.2 a 1.7± 0.1 b Thy1 Thy2 Thy3 Thy4 2.7 9.5min (10.4) ●Gate trigger current: IGT=10mA max 8.5max ●Repetitive peak off-state voltage: VDRM=600V ●Average on-state current: IT(AV)=5A 3.2± 0.15 × 3.8 31.0± 0.2 24.4± 0.2 16.4± 0.2 φ 3.2± 0.15 0.8max ●5A 4 Thyristors combined one package 12 Pin 1 +0.2 0.85 – 0.1 +0.2 1.45± 0.15 0.55 – 0.1 1.2± 0.15 2.2 0.7 1 11✕ P2.54± 0.7=27.94± 0.1 31.5max a. Part Number b. Lot Number 2 3 4 5 6 7 8 9 10 11 12 1, 4, 7, 10 : Gate (G) 2, 5, 8, 11 : Cathode (K) 3, 6, 9, 12 : Anode (A) 1 2 3 4 5 6 7 8 9 10 11 12 G K A G K A G K A G K A Weight: Approx. 6.1g ■Absolute Maximum Ratings Parameter Symbol Ratings Unit Repetitive peak off-state voltage VDRM 600 V Repetitive peak reverse voltage VRRM 600 V Non-repetitive peak off-state voltage VDSM 650 V Non-repetitive peak reverse voltage VRSM 650 V Average on-state current IT(AV) 5.0 A RMS on-state current IT(RMS) 7.8 A Surge on-state current ITSM 80 A Peak forward gate current IFGM 2.0 A Peak forward gate voltage VFGM 10 V Peak reverse gate voltage VRGM 5.0 Peak gate power loss Tj= –40 to +125°C, RGK =1kΩ 50Hz Half-cycle sinewave, Conduction angle 180°, Continuous current 50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125°C f 50Hz, duty V f 50Hz f 50Hz, duty PGM 5.0 W PG(AV) 0.5 W Junction temperature Tj – 40 to +125 °C Storage temperature Tstg – 40 to +125 °C Average gate power loss Conditions 10% 10% ■Electrical Characteristics Parameter Off-state current Symbol Ratings min typ IDRM max Unit 2.0 mA Tj=125°C, VD=600V, RGK=1kΩ 100 µA Tj=25°C, VD=600V, RGK=1kΩ 2.0 mA Tj=125°C, VD=600V, RGK=1kΩ 100 µA Tj=25°C, VD=600V, RGK=1kΩ Reverse current IRRM On-state voltage VTM 1.4 V Gate trigger voltage VGT 0.7 1.5 V Gate trigger current IGT 5.0 10 mA Gate non-trigger voltage VGD Holding current Critical rate-of-rise of off-state voltage Total power dissipation 22 0.1 V IH 4.0 mA dv/dt 50 V/µS PT Conditions 4 32 W TC=25°C, ITM=10A VD=6V, RL=10Ω, TC=25°C VD=1/2 × VDRM, Tj=125°C, RGK=1kΩ RGK=1kΩ, Tj=25°C VD=1/2 × VDRM, Tj=125°C, RGK=1kΩ, CGK=0.033µF Without Heatsink, Tj=25°C, All elements operation With infinite Heatsink, Tj=25°C, All elements operation