Off-Line PWM Controllers with Integrated Power MOSFET STR-W6000S Series General Descriptions Package The STR-W6000S series are power ICs for switching power supplies, incorporating a MOSFET and a current mode PWM controller IC. The low standby power is accomplished by the automatic switching between the PWM operation in normal operation and the burst-oscillation under light load conditions. The product achieves high cost-performance power supply systems with few external components. TO220F-6L Features Current Mode Type PWM Control Brown-In and Brown-Out function Auto Standby Function Not to Scale Lineup No Load Power Consumption < 30 mW Operation Mode Normal Operation ----------------------------- PWM Mode Standby ---------------------------- Burst Oscillation Mode Random Switching Function Slope Compensation Function Leading Edge Blanking Function Bias Assist Function Audible Noise Suppression function during Standby mode Protections ・Overcurrent Protection (OCP); Pulse-by-Pulse, built-in compensation circuit to minimize OCP point variation on AC input voltage ・Overload Protection (OLP); auto-restart ・Overvoltage Protection (OVP); auto-restart ・Thermal Shutdown Protection (TSD); auto-restart Electrical Characteristics fOSC(AVG) = 67 kHz Products VDSS (min.) RDS(ON) (max.) 3.95 Ω 650 V 2.8 Ω STR-W6051S STR-W6052S 1.9 Ω STR-W6053S STR-W6072S 800 V 3.6 Ω Output Power, POUT* Products POUT (Open frame) AC230V AC85~265V STR-W6051S 45 W 30 W STR-W6052S 60 W 40 W STR-W6053S 90 W 60 W STR-W6072S 50 W 32 W * The output power is actual continues power that is measured at 50 °C ambient. The peak output power can be 120 to 140 % of the value stated here. Core size, ON Duty, and thermal design affect the output power. It may be less than the value stated here. Typical Application Circuit BR1 T1 VAC C1 C6 L51 D51 VOUT(+) R1 PC1 P R55 C51 D1 S D2 STR-W6000S C2 D/ST 2 S/OCP VCC GND FB/OLP BR ROCP C53 U51 R2 White goods Office automation equipment Industrial equipment R56 VOUT(-) D RA RB 3 4 5 6 7 C4 C3 C5 R52 C52 R53 U1 1 Applications R54 R51 RC PC1 CY TC_STR-W6000S_1_R1 STR-W6000S - DS Rev.2.0 Aug. 07, 2014 SANKEN ELECTRIC CO.,LTD. http://www.sanken-ele.co.jp/en/ 1 STR-W6000S Series CONTENTS General Descriptions ----------------------------------------------------------------------- 1 1. Absolute Maximum Ratings --------------------------------------------------------- 3 2. Electrical Characteristics ------------------------------------------------------------ 4 3. Performance Curves ------------------------------------------------------------------ 5 3.1 Derating Curves --------------------------------------------------------------- 5 3.2 Ambient Temperature versus Power Dissipation Curves ------------ 6 3.3 MOSFET Safe Operating Area Curves ---------------------------------- 7 3.4 Transient Thermal Resistance Curves ----------------------------------- 8 4. Functional Block Diagram ----------------------------------------------------------- 9 5. Pin Configuration Definitions ------------------------------------------------------- 9 6. Typical Application Circuit -------------------------------------------------------- 10 7. Package Outline ----------------------------------------------------------------------- 11 8. Marking Diagram -------------------------------------------------------------------- 11 9. Operational Description ------------------------------------------------------------- 12 9.1 Startup Operation ----------------------------------------------------------- 12 9.2 Undervoltage Lockout (UVLO) ------------------------------------------- 13 9.3 Bias Assist Function --------------------------------------------------------- 13 9.4 Constant Output Voltage Control ---------------------------------------- 13 9.5 Leading Edge Blanking Function ---------------------------------------- 14 9.6 Random Switching Function ---------------------------------------------- 14 9.7 Automatic Standby Mode Function-------------------------------------- 14 9.8 Brown-In and Brown-Out Function ------------------------------------- 15 9.9 Overcurrent Protection Function (OCP) ------------------------------- 16 9.10 Overload Protection Function (OLP) ----------------------------------- 17 9.11 Overvoltage Protection (OVP) -------------------------------------------- 18 9.12 Thermal Shutdown Function (TSD) ------------------------------------- 18 10. Design Notes --------------------------------------------------------------------------- 18 10.1 External Components ------------------------------------------------------- 18 10.2 PCB Trace Layout and Component Placement ----------------------- 20 11. Pattern Layout Example ------------------------------------------------------------ 22 12. Reference Design of Power Supply ----------------------------------------------- 23 OPERATING PRECAUTIONS -------------------------------------------------------- 25 IMPORTANT NOTES ------------------------------------------------------------------- 26 STR-W6000S - DS Rev.2.0 Aug. 07, 2014 SANKEN ELECTRIC CO.,LTD. 2 STR-W6000S Series 1. Absolute Maximum Ratings The polarity value for current specifies a sink as "+," and a source as "−," referencing the IC. Unless otherwise specified TA = 25 °C Parameter Symbol Test Conditions Pins Rating Units 5.0 Drain Peak Current(1) Maximum Switching Current(2) IDPEAK IDMAX Single pulse Single pulse Ta= ‒20 to 125°C 7.0 1–3 7.5 Avalanche Energy(3)(4) EAS ILPEAK=2.3A STR-W6072S 5.0 STR-W6051S STR-W6052S A STR-W6072S 9.5 STR-W6053S 47 STR-W6051S 60 1–3 STR-W6052S A STR-W6053S 7.5 ILPEAK=2.0A STR-W6051S 9.5 7.0 1–3 mJ 62 STR-W6052S ILPEAK=2.7A 86 STR-W6053S VOCP 3–5 − 2 to 6 V VCC Pin Voltage VCC 4–5 32 V FB/OLP Pin Voltage VFB 6–5 − 0.3 to 14 V FB/OLP Pin Sink Current IFB 6–5 1.0 mA BR Pin Voltage VBR 7–5 − 0.3 to 7 V BR Pin Sink Current IBR 7–5 1.0 mA 22.3 PD1 With infinite heatsink 23.6 1–3 25.8 STR-W6051S STR-W6052S W STR-W6072S 26.5 Control Part Power Dissipation Internal Frame Temperature in Operation Operating Ambient Temperature Storage Temperature Junction Temperature STR-W6053S Without heatsink 1–3 1.3 W VCC×ICC 4–5 0.13 W TF − − 20 to 115 °C TOP − − 20 to 115 °C Tstg − − 40 to 125 °C Tch − 150 °C PD2 STR-W6072S ILPEAK=2.3A S/OCP Pin Voltage MOSFET Power Dissipation(5) Notes (1) Refer to 3.3 MOSFET Safe Operating Area Curves. The maximum switching current is the drain current determined by the drive voltage of the IC and threshold voltage (Vth) of the MOSFET. (3) Refer to Figure 3-2 Avalanche Energy Derating Coefficient Curve. (4) Single pulse, VDD = 99 V, L = 20 mH (5) Refer to 3.2 Ta-PD1curves. (2) STR-W6000S - DS Rev.2.0 Aug. 07, 2014 SANKEN ELECTRIC CO.,LTD. 3 STR-W6000S Series 2. Electrical Characteristics The polarity value for current specifies a sink as "+," and a source as "−," referencing the IC. Unless otherwise specified, TA = 25 °C, VCC = 18 V Parameter Symbol Test Conditions Pins Min. Typ. Max. Units VCC(ON) 4–5 13.8 15.3 16.8 V VCC(OFF) 4–5 7.3 8.1 8.9 V 4–5 − − 2.5 mA VST(ON) 4–5 − 40 − V ISTARTUP VCC = 13.5 V 4 – 5 − 3.9 − 2.5 − 1.1 mA VCC(BIAS) ICC = − 100 µA 4–5 8.5 9.5 10.5 V fOSC(AVG) 1–5 60 67 74 kHz Δf 1–5 − 5 − kHz DMAX 1–5 63 71 79 % tBW − − 390 − ns DPC − − 18 − mV/μs DDPC − − 36 − % VOCP(L) 3–5 0.70 0.78 0.86 V Notes Power Supply Startup Operation Operation Start Voltage Operation Stop Voltage (1) Circuit Current in Operation Startup Circuit Operation Voltage Startup Current Startup Current Biasing Threshold Voltage Normal Operation Average Switching Frequency Switching Frequency Modulation Deviation Maximum ON Duty ICC(ON) VCC = 12 V Protection Function Leading Edge Blanking Time OCP Compensation Coefficient OCP Compensation ON Duty OCP Threshold Voltage at Zero ON Duty OCP Threshold Voltage at 36% ON Duty Maximum Feedback Current VOCP(H) VCC = 32 V 3–5 0.79 0.88 0.97 V IFB(MAX) VCC = 12 V 6–5 − 340 − 230 − 150 µA IFB(MIN) 6–5 − 30 − 15 −7 µA Minimum Feedback Current FB/OLP pin Oscillation Stop Threshold Voltage OLP Threshold Voltage VFB(STB) 6–5 0.85 0.95 1.05 V VFB(OLP) 6–5 7.3 8.1 8.9 V OLP Operation Current ICC(OLP) 4–5 − 300 − µA tOLP 6–5 54 68 82 ms VFB(CLAMP) 6–5 11 12.8 14 V VCC = 32 V 7–5 5.2 5.6 6 V VCC = 32 V 7–5 4.45 4.8 5.15 V VCC = 32 V 7–5 6 6.4 7 V VCC = 32 V 7–5 0.3 0.48 0.7 V 4–5 26 29 32 V − 130 − − °C OLP Delay Time FB/OLP Pin Clamp Voltage Brown-In Threshold Voltage VBR(IN) Brown-Out Threshold VBR(OUT) Voltage BR Pin Clamp Voltage VBR(CLAMP) BR Function Disabling VBR(DIS) Threshold OVP Threshold Voltage VCC(OVP) Thermal Shutdown Operating Tj(TSD) Temperature (1) VCC = 12 V VCC(BIAS) > VCC(OFF) always. STR-W6000S - DS Rev.2.0 Aug. 07, 2014 SANKEN ELECTRIC CO.,LTD. 4 STR-W6000S Series Parameter Symbol Test Conditions Pins Min. Typ. Max. 650 − − 800 − − − − 300 − − 3.95 − − 3.6 − − 2.8 − − 1.9 − − 250 − − 2.63 − − 2.26 − − 2.03 − − 1.95 Units Notes MOSFET Drain-to-Source Breakdown Voltage VDSS 8–1 Drain Leakage Current IDSS 8–1 On Resistance 8–1 RDS(ON) Switching Time 8–1 tf V STR-W605×S STR-W6072S μA STR-W6051S Ω STR-W6072S STR-W6052S STR-W6053S ns Thermal Resistance Channel to Frame Thermal Resistance(2) (2) θch-F − STR-W6051S °C/W STR-W6052S STR-W6072S STR-W6053S The thermal resistance between the channels of the MOSFET and the internal frame. 3. 3.1 Performance Curves Derating Curves EAS Temperature Derating Coefficient (%) Safe Operating Area Temperature Derating Coefficient (%) 100 80 60 40 20 100 80 60 40 20 0 0 0 25 50 75 100 125 25 STR-W6000S - DS Rev.2.0 Aug. 07, 2014 75 100 125 150 Channel Temperature, Tch (°C) Channel Temperature, Tch (°C) Figure 3-1 SOA Temperature Derating Coefficient Curve 50 Figure 3-2 Avalanche Energy Derating Coefficient Curve SANKEN ELECTRIC CO.,LTD. 5 STR-W6000S Series Ambient Temperature versus Power Dissipation Curves STR-W6052S 30 PD1=22.3W With infinite heatsink 20 15 10 5 Power Dissipation, PD1 (W) 25 PD1_STR-W6051S_R1 Power Dissipation, PD1 (W) 30 PD1=23.6W 25 With infinite heatsink 20 15 10 5 Without heatsink Without heatsink PD1=1.3W PD1=1.3W 0 0 0 25 50 75 100 125 150 0 Ambient Temperature, TA (°C ) 25 50 75 100 125 150 Ambient Temperature, TA (°C ) STR-W6072S PD1_STR-W6053S_R1 30 PD1=26.5W 25 With infinite heatsink 20 15 10 Without heatsink 5 30 PD1=25.8W 25 Power Dissipation, PD1 (W) STR-W6053S Power Dissipation, PD1 (W) PD1_STR-W6052S_R1 STR-W6051S PD1_STR-W6072S_R1 3.2 With infinite heatsink 20 15 10 Without heatsink 5 PD1=1.3W PD1=1.3W 0 0 0 25 50 75 100 125 150 0 Ambient Temperature, TA (°C ) STR-W6000S - DS Rev.2.0 Aug. 07, 2014 SANKEN ELECTRIC CO.,LTD. 25 50 75 100 125 150 Ambient Temperature, TA (°C ) 6 STR-W6000S Series 3.3 MOSFET Safe Operating Area Curves When the IC is used, the safe operating area curve should be multiplied by the temperature derating coefficient derived from Figure 3-1. The broken line in the safe operating area curve is the drain current curve limited by on-resistance. Unless otherwise specified, TA = 25 °C, Single pulse STR-W6052S 1ms 0.1 1 1ms 0.1 0.01 0.01 10 100 Drain-to-Source Voltage (V) 1 1000 10 100 1000 Drain-to-Source Voltage (V) STR-W6072S 100 0.1ms 10 SOA_STR-W6053S_R1 STR-W6053S 1ms 1 0.1 100 0.1ms 10 1 SOA_STR-W6072S_R1 1 Drain Current, ID (A) 0.1ms SOA_STR-W6052S_R1 1 10 Drain Current, ID (A) Drain Current, ID (A) 0.1ms Drain Current, ID (A) 10 SOA_STR-W6051S_R1 STR-W6051S 1ms 0.1 0.01 0.01 1 10 100 1000 1 Drain-to-Source Voltage (V) STR-W6000S - DS Rev.2.0 Aug. 07, 2014 SANKEN ELECTRIC CO.,LTD. 10 100 1000 Drain-to-Source Voltage (V) 7 STR-W6000S Series 3.4 Transient Thermal Resistance Curves STR-W6051S TR_STR-W6051S_R1 Transient Thermal Resistance θch-c (°C/W) 10 1 0.1 0.01 1µ 10µ 100µ 1m 10m 100m 1m 10m 100m Time (s) STR-W6052S TR_STR-W6052S_R1 Transient Thermal Resistance θch-c (°C/W) 10 1 0.1 0.01 1µ 10µ 100µ Time (s) STR-W6053S TR_STR-W6053S_R1 Transient Thermal Resistance θch-c (°C/W) 10 1 0.1 0.01 0.001 1µ 10µ 100µ 1m 10m 1m 10m 100m Time (s) STR-W6072S TR_STR-W6072S_R1 Transient Thermal Resistance θch-c (°C/W) 10 1 0.1 0.01 0.001 1µ 10µ 100µ 100m Time (s) STR-W6000S - DS Rev.2.0 Aug. 07, 2014 SANKEN ELECTRIC CO.,LTD. 8 STR-W6000S Series 4. Functional Block Diagram VCC 4 Startup UVLO BR 7 REG VREG OVP D/ST 1 TSD Brown-in Brown-out 6.4V DRV PWM OSC S Q R OCP 7V VCC Drain peak current compensation OLP Feedback control FB/OLP 6 12.8V LEB S/OCP 3 GND 5 Slope compensation BD_STR-W6000S_R1 5. Pin Configuration Definitions Pin Name 1 D/ST 2 − 1 D/ST 3 S/OCP 4 VCC 3 S/OCP 5 6 GND FB/OLP 4 VCC 7 BR 5 GND 6 FB /OLP 7 BR (LF2003) STR-W6000S - DS Rev.2.0 Aug. 07, 2014 Descriptions MOSFET drain and startup current input (Pin removed) MOSFET source and overcurrent protection (OCP) signal input Power supply voltage input for control part and overvoltage protection (OVP) signal input Ground Constant voltage control signal input and over load protection (OLP) signal input Brown-In and Brown-Out detection voltage input SANKEN ELECTRIC CO.,LTD. 9 STR-W6000S Series 6. Typical Application Circuit The following drawings show circuits enabled and disabled the Brown-In/Brown-Out function. The PCB traces D/ST pins should be as wide as possible, in order to enhance thermal dissipation. In applications having a power supply specified such that D/ST pin has large transient surge voltages, a clamp snubber circuit of a capacitor-resistor-diode (CRD) combination should be added on the primary winding P, or a damper snubber circuit of a capacitor (C) or a resistor-capacitor (RC) combination should be added between the D/ST pin and the S/OCP pin. CRD clamp snubber BR1 VAC C6 L51 D51 T1 VOUT (+) R1 R54 PC1 C1 R51 P R55 C51 D1 R52 S C53 C52 R53 STR-W6000S RA D/ST 2 S/OCP VCC GND FB/OLP BR U51 RB 3 4 5 6 7 1 (-) D2 C5 R2 D C2 ROCP C3 PC1 C4 C（CR） damper snubber R56 RC CY TC_STR-W6000S_2_R1 Figure 6-1 Typical application circuit (enabled Brown-In/Brown-Out function, DC line detection) CRD clamp snubber BR1 C6 L51 D51 T1 VAC VOUT (+) R1 R54 PC1 C1 P R55 C51 D1 S R51 R52 C53 C52 R53 U51 R56 (-) D/ST 2 S/OCP VCC GND FB/OLP BR STR-W6000S 3 4 5 6 7 1 D2 C5 ROCP C（RC） damper snubber C2 C3 R2 D PC1 CY TC_STR-W6000S_3_R1 Figure 6-2 Typical application circuit (disabled Brown-In/Brown-Out function) STR-W6000S - DS Rev.2.0 Aug. 07, 2014 SANKEN ELECTRIC CO.,LTD. 10 STR-W6000S Series 7. Package Outline TO220F-6L The pin 2 is removed to provide greater creepage and clearance isolation between the high voltage pin (pin 1: D/ST) and the low voltage pin (pin 3: S/OCP). 10.0±0.2 4.2±0.2 Gate burr 16.9±0.3 φ 3.2±0.2 7.9±0.2 4±0.2 0.5 2.8±0.2 2.6±0.1 6-0.74±0.15 +0.2 R-end (2 1) -R (5.4) 6-0.65 -0.1 6×P1.27±0.15=7.62±0.15 10.4±0.5 5.0±0.5 2.8 （Dimensions from root） 0.45 +0.2 -0.1 （Dimensions from root） 5.08±0.6 (Dimensions between tips) 0.5 0.5 Front view 1 2 3 4 5 6 7 0.5 0.5 Side view NOTES: 1) Dimension is in millimeters 2) Leadform: LF No.2003 3) Gate burr indicates protrusion of 0.3 mm (max). 4) Pb-free. Device composition compliant with the RoHS directive 8. Marking Diagram STR W60××S Part Number 2 YMDDX 1 STR-W6000S - DS Rev.2.0 Aug. 07, 2014 3 7 Lot Number Y is the last digit of the year (0 to 9) M is the month (1 to 9, O, N or D) DD is a day (01 to 31) X is the Sanken Control Symbol SANKEN ELECTRIC CO.,LTD. 11 STR-W6000S Series 9. Operational Description All of the parameter values used in these descriptions are typical values, unless they are specified as minimum or maximum. With regard to current direction, "+" indicates sink current (toward the IC) and "–" indicates source current (from the IC). 9.1 With Brown-In / Brown-Out function When BR pin voltage is more than VBR(DIS) = 0.48 V and less than VBR(IN) = 5.6 V, the Bias Assist Function (refer to Section 9.3) is disabled. Thus, VCC pin voltage repeats increasing to VCC(ON) and decreasing to VCC(OFF) (shown in Figure 9-3). When BR pin voltage becomes VBR(IN) or more, the IC starts switching operation. BR1 Startup Operation Figure 9-1 shows the circuit around IC. Figure 9-2 shows the start up operation. The IC incorporates the startup circuit. The circuit is connected to D/ST pin. When D/ST pin voltage reaches to Startup Circuit Operation Voltage VST(ON) = 40 V, the startup circuit starts operation. During the startup process, the constant current, ISTARTUP = − 2.5 mA, charges C2 at VCC pin. When VCC pin voltage increases to VCC(ON) = 15.3 V, the control circuit starts operation. During the IC operation, the voltage rectified the auxiliary winding voltage, VD, of Figure 9-1 becomes a power source to the VCC pin. After switching operation begins, the startup circuit turns off automatically so that its current consumption becomes zero. The approximate value of auxiliary winding voltage is about 15 V to 20 V, taking account of the winding turns of D winding so that VCC pin voltage becomes Equation (1) within the specification of input and output voltage variation of power supply. C1 1 D/ST U1 VCC 4 D2 C2 GND BR 7 P R2 D VD 5 Figure 9-1 VCC pin peripheral circuit (Without Brown-In / Brown-Out) VCC pin voltage VCC(ON) VCC( BIAS) (max .) VCC VCC(OVP ) (min .) tSTART ⇒10.5 (V) VCC 26 (V) (1) The oscillation start timing of IC depends on Brown-In / Brown-Out function (refer to Section 9.8). Without Brown-In / Brown-Out function (BR pin voltage is VBR(DIS) = 0.48 V or less) When VCC pin voltage increases to VCC(ON), the IC starts switching operation, As shown in Figure 9-2. The startup time of IC is determined by C2 capacitor value. The approximate startup time tSTART (shown in Figure 9-2) is calculated as follows: t START C2 × T1 VAC VCC( ON )－VCC( INT ) (2) I STRATUP where, tSTART : Startup time of IC (s) VCC(INT) : Initial voltage on VCC pin (V) Drain current, ID Figure 9-2 Startup operation (Without Brown-In / Brown-Out) VCC pin voltage tSTART VCC(ON) VCC(OFF) BR pin voltage VBR(IN) Drain current, ID Figure 9-3 Startup operation (With Brown-In / Brown-Out) STR-W6000S - DS Rev.2.0 Aug. 07, 2014 SANKEN ELECTRIC CO.,LTD. 12 STR-W6000S Series 9.2 Undervoltage Lockout (UVLO) Figure 9-4 shows the relationship of VCC pin voltage and circuit current ICC. When VCC pin voltage decreases to VCC(OFF) = 8.1 V, the control circuit stops operation by UVLO (Undervoltage Lockout) circuit, and reverts to the state before startup. Circuit current, ICC ICC（ON） Stop biasing voltage, VCC(BIAS) = 9.5 V. While the Bias Assist function is activated, any decrease of the VCC pin voltage is counteracted by providing the startup current, ISTARTUP, from the startup circuit. Thus, the VCC pin voltage is kept almost constant. By the Bias Assist function, the value of C2 is allowed to be small and the startup time becomes shorter. Also, because the increase of VCC pin voltage becomes faster when the output runs with excess voltage, the response time of the OVP function becomes shorter. It is necessary to check and adjust the startup process based on actual operation in the application, so that poor starting conditions may be avoided. Start 9.4 VCC（OFF） VCC（ON） VCC pin voltage Figure 9-4 Relationship between VCC pin voltage and ICC 9.3 Bias Assist Function Figure 9-5 shows VCC pin voltage behavior during the startup period. After VCC pin voltage increases to VCC(ON) = 15.3 V at startup, the IC starts the operation. Then circuit current increases and VCC pin voltage decreases. At the same time, the auxiliary winding voltage VD increases in proportion to output voltage. These are all balanced to produce VCC pin voltage. VCC pin voltage Constant Output Voltage Control The IC achieves the constant voltage control of the power supply output by using the current-mode control method, which enhances the response speed and provides the stable operation. The FB/OLP pin voltage is internally added the slope compensation at the feedback control (refer to Section 4 Functional Block Diagram), and the target voltage, V SC, is generated. The IC compares the voltage, VROCP, of a current detection resistor with the target voltage, VSC, by the internal FB comparator, and controls the peak value of VROCP so that it gets close to VSC, as shown in Figure 9-6 and Figure 9-7. U1 S/OCP 3 GND FB/OLP 5 6 PC1 Startup success IC starts operation Target operating voltage Increase with rising of output voltage VCC(ON) VCC(BIAS) VROCP ROCP C3 IFB Figure 9-6 FB/OLP pin peripheral circuit Bias assist period VCC(OFF) Target voltage including Slope Compensation Startup failure Time Figure 9-5 VCC pin voltage during startup period The surge voltage is induced at output winding at turning off a power MOSFET. When the output load is light at startup, the surge voltage causes the unexpected feedback control. This results the lowering of the output power and VCC pin voltage. When the VCC pin voltage decreases to VCC(OFF) = 8.1 V, the IC stops switching operation and a startup failure occurs. In order to prevent this, the Bias Assist function is activated when the VCC pin voltage decreases to the startup current threshold STR-W6000S - DS Rev.2.0 Aug. 07, 2014 - VSC + VROCP FB Comparator Voltage on both sides of ROCP Drain current, ID Figure 9-7 Drain current, ID, and FB comparator operation in steady operation SANKEN ELECTRIC CO.,LTD. 13 STR-W6000S Series Light load conditions When load conditions become lighter, the output voltage, VOUT, increases. Thus, the feedback current from the error amplifier on the secondary-side also increases. The feedback current is sunk at the FB/OLP pin, transferred through a photo-coupler, PC1, and the FB/OLP pin voltage decreases. Thus, VSC decreases, and the peak value of VROCP is controlled to be low, and the peak drain current of I D decreases. This control prevents the output voltage from increasing. Heavy load conditions When load conditions become greater, the IC performs the inverse operation to that described above. Thus, VSC increases and the peak drain current of ID increases. This control prevents the output voltage from decreasing. In the current mode control method, when the drain current waveform becomes trapezoidal in continuous operating mode, even if the peak current level set by the target voltage is constant, the on-time fluctuates based on the initial value of the drain current. This results in the on-time fluctuating in multiples of the fundamental operating frequency as shown in Figure 9-8. This is called the subharmonics phenomenon. In order to avoid this, the IC incorporates the Slope Compensation function. Because the target voltage is added a down-slope compensation signal, which reduces the peak drain current as the on-duty gets wider relative to the FB/OLP pin signal to compensate V SC, the subharmonics phenomenon is suppressed. Even if subharmonic oscillations occur when the IC has some excess supply being out of feedback control, such as during startup and load shorted, this does not affect performance of normal operation. In peak-current-mode control method, there is a case that the power MOSFET turns off due to unexpected response of FB comparator or overcurrent protection circuit (OCP) to the steep surge current in turning on a power MOSFET. In order to prevent this response to the surge voltage in turning-on the power MOSFET, the Leading Edge Blanking, tBW = 390 ns is built-in. During tBW, the OCP threshold voltage becomes about 1.7 V which is higher than the normal OCP threshold voltage (refer to Section 9.9). 9.6 Random Switching Function The IC modulates its switching frequency randomly by superposing the modulating frequency on fOSC(AVG) in normal operation. This function reduces the conduction noise compared to others without this function, and simplifies noise filtering of the input lines of power supply. 9.7 Automatic Standby Mode Function Automatic standby mode is activated automatically when the drain current, ID, reduces under light load conditions, at which ID is less than 15 % to 20 % of the maximum drain current (it is in the OCP state). The operation mode becomes burst oscillation, as shown in Figure 9-9. Burst oscillation mode reduces switching losses and improves power supply efficiency because of periodic non-switching intervals. Output current, IOUT Burst oscillation Below several kHz Target voltage without Slope Compensation Drain current, ID Normal operation Standby operation Normal operation Figure 9-9 Auto Standby mode timing tON1 T tON2 T T Figure 9-8 Drain current, ID, waveform in subharmonic oscillation 9.5 Leading Edge Blanking Function The IC uses the peak-current-mode control method for the constant voltage control of output. STR-W6000S - DS Rev.2.0 Aug. 07, 2014 Generally, to improve efficiency under light load conditions, the frequency of the burst oscillation mode becomes just a few kilohertz. Because the IC suppresses the peak drain current well during burst oscillation mode, audible noises can be reduced. If the VCC pin voltage decreases to VCC(BIAS) = 9.5 V during the transition to the burst oscillation mode, the Bias Assist function is activated and stabilizes the Standby mode operation, because ISTARTUP is provided to the VCC pin so that the VCC pin voltage does not decrease to VCC(OFF). SANKEN ELECTRIC CO.,LTD. 14 STR-W6000S Series However, if the Bias Assist function is always activated during steady-state operation including standby mode, the power loss increases. Therefore, the VCC pin voltage should be more than VCC(BIAS), for example, by adjusting the turns ratio of the auxiliary winding and secondary winding and/or reducing the value of R2 in Figure 10-2 (refer to Section 10.1 Peripheral Components for a detail of R2). 9.8 Brown-In and Brown-Out Function This function stops switching operation when it detects low input line voltage, and thus prevents excessive input current and overheating. This function turns on and off switching operation according to the BR pin voltage detecting the AC input voltage. When BR pin voltage becomes more than VBR(DIS) = 0.48 V, this function is activated. Figure 9-10 shows waveforms of the BR pin voltage and the drain currnet. Even if the IC is in the operating state that the VCC pin voltage is VCC(OFF) or more, when the AC input voltage decreases from steady-state and the BR pin voltage falls to VBR(OUT) = 4.8 V or less for the OLP Delay Time, tOLP = 68 ms, the IC stops switching operation. When the AC input voltage increases and the BR pin voltage reaches VBR(IN) = 5.6 V or more in the operating state that the VCC pin voltage is VCC(OFF) or more, the IC starts switching operation. In case the Brown-In and Brown-Out function is unnecessary, connect the BR pin trace to the GND pin trace so that the BR pin voltage is VBR(DIS) or less. This function is disabled during switching operation stop period in burst oscillation mode. When the BR pin voltage falls to VBR(OUT) or less in burst oscillation mode and the sum of switching operation period becomes tOLP = 68 ms or more, the IC stops switching operation. 9.8.1 DC Line Detection Figure 9-11 shows BR pin peripheral circuit of DC line detection. There is a ripple voltage on C1 occurring at a half period of AC cycle. In order to detect each peak of the ripple voltage, the time constant of RC and C4 should be shorter than a half period of AC cycle. Since the cycle of the ripple voltage is shorter than tOLP, the switching operation does not stop when only the bottom part of the ripple voltage becomes lower than VBR(OUT). Thus it minimizes the influence of load conditions on the voltage detection. BR1 VAC RA VDC U1 C1 RB 7 RC BR C4 GND 5 Figure 9-11 DC line detection The components around BR pin: ・ RA and RB are a few megohms. Because of high voltage applied and high resistance, it is recommended to select a resistor designed against electromigration or use a combination of resistors in series for that to reduce each applied voltage, according to the requirement of the application. ・ RC is a few hundred kilohms ・ C4 is 470 pF to 2200 pF for high frequency noise reduction BR pin voltage VBR(IN) VBR(OUT) Drain current, ID There are two types of detection method as follows: tOLP Figure 9-10 BR pin voltage and drain current waveforms Neglecting the effect of both input resistance and forward voltage of rectifier diode, the reference value of C1 voltage when Brown-In and Brown-Out function is activated is calculated as follows: R RB VDC ( OP ) VBR ( TH) 1 A R C where, VDC(OP) VBR(TH) STR-W6000S - DS Rev.2.0 Aug. 07, 2014 SANKEN ELECTRIC CO.,LTD. (3) : C1 voltage when Brown-In and Brown-Out function is activated : Any one of threshold voltage of BR pin (see Table 9-1) 15 STR-W6000S Series Table 9-1 BR pin threshold voltage Parameter VBR(IN) Value (Typ.) 5.6 V VBR(OUT) 4.8 V Symbol Brown-In Threshold Voltage Brown-Out Threshold Voltage Neglecting the effect of input resistance is zero, the reference effective value of AC input voltage when Brown-In and Brown-Out function is activated is calculated as follows: VAC ( OP ) RMS VDC(OP) can be expressed as the effective value of AC input voltage using Equation (4). VAC ( OP ) RMS 1 2 VDC ( OP ) (5) where, VAC(OP)RMS :The effective value of AC input voltage when Brown-In and Brown-Out function is activated VBR(TH) :Any one of threshold voltage of BR pin (see Table 9-1) (4) RA, RB, RC and C4 should be selected based on actual operation in the application. R RB VBR ( TH) 1 A R C 2 RA, RB, RC and C4 should be selected based on actual operation in the application. 9.8.2 AC Line Detection Figure 9-12 shows BR pin peripheral circuit of AC line detection. In order to detect the AC input voltage, the time constant of RC and C4 should be longer than the period of AC cycle. Thus the response of BR pin detection becomes slow compared with the DC line detection. This method detects the AC input voltage, and thus it minimizes the influence from load conditions. VAC BR1 RA 4 VCC RS VDC RB C1 7 RC BR C4 U1 GND 5 9.9 Overcurrent Protection Function (OCP) Overcurrent Protection Function (OCP) detects each drain peak current level of a power MOSFET on pulse-by-pulse basis, and limits the output power when the current level reaches to OCP threshold voltage. During Leading Edge Blanking Time (tBW), OCP is disabled. When power MOSFET turns on, the surge voltage width of S/OCP pin should be less than tBW, as shown in Figure 9-13. In order to prevent surge voltage, pay extra attention to ROCP trace layout (refer to Section ). In addition, if a C (RC) damper snubber of Figure 9-14 is used, reduce the capacitor value of damper snubber. tBW VOCP’ Figure 9-12 AC line detection The components around BR pin: ・ RA and RB are a few megohms. Because of high voltage applied and high resistance, it is recommended to select a resistor designed against electromigration or use a combination of resistors in series for that to reduce each applied voltage, according to the requirement of the application. Surge pulse voltage width at turning on Figure 9-13 S/OCP pin voltage ・ RC is a few hundred kilohms ・ RS must be adjusted so that the BR pin voltage is more than VBR(DIS) = 0.48 V when the VCC pin voltage is VCC(OFF) = 8.1 V ・ C4 is 0.22 μF to 1 μF for averaging AC input voltage and high frequency noise reduction. STR-W6000S - DS Rev.2.0 Aug. 07, 2014 SANKEN ELECTRIC CO.,LTD. 16 STR-W6000S Series C（RC） Damper snubber VOCP ' VOCP ( L) DPC ONTime T1 VOCP ( L ) DPC D51 C1 C51 1 D/ST U1 ROCP Figure 9-14 Damper snubber 9.10 Overload Protection Function (OLP) < Input Compensation Function > ICs with PWM control usually have some propagation delay time. The steeper the slope of the actual drain current at a high AC input voltage is, the larger the detection voltage of actual drain peak current is, compared to VOCP. Thus, the peak current has some variation depending on the AC input voltage in OCP state. In order to reduce the variation of peak current in OCP state, the IC incorporates a built-in Input Compensation function. The Input Compensation Function is the function of correction of OCP threshold voltage depending with AC input voltage, as shown in Figure 9-15. When AC input voltage is low (ON Duty is broad), the OCP threshold voltage is controlled to become high. The difference of peak drain current become small compared with the case where the AC input voltage is high (ON Duty is narrow). The compensation signal depends on ON Duty. The relation between the ON Duty and the OCP threshold voltage after compensation VOCP' is expressed as Equation (6). When ON Duty is broader than 36 %, the VOCP' becomes a constant value VOCP(H) = 0.88 V Figure 9-16 shows the FB/OLP pin peripheral circuit, and Figure 9-17 shows each waveform for OLP operation. U1 GND FB/OLP 6 3 VCC 4 D2 R2 PC1 C3 C2 D Figure 9-16 FB/OLP pin peripheral circuit Non-switching interval VCC pin voltage VCC(ON) VCC(OFF) FB/OLP pin voltage 1.0 OCP Threshold Voltage after compensation, VOCP' (6) where, VOCP(L): OCP Threshold Voltage at Zero ON Duty DPC: OCP Compensation Coefficient ONTime: On-time of power MOSFET ONDuty: On duty of power MOSFET fOSC(AVG): Average PWM Switching Frequency C（RC） Damper snubber S/OCP 3 ONDuty f OSC ( AVG ) tOLP VFB(OLP) tOLP VOCP(H) Drain current, ID VOCP(L) Figure 9-17 OLP operational waveforms DDPC 0.5 0 50 DMAX 100 ON Duty (%) Figure 9-15 Relationship between ON Duty and Drain Current Limit after compensation STR-W6000S - DS Rev.2.0 Aug. 07, 2014 When the peak drain current of ID is limited by OCP operation, the output voltage, VOUT, decreases and the feedback current from the secondary photo-coupler becomes zero. Thus, the feedback current, IFB, charges C3 connected to the FB/OLP pin and the FB/OLP pin voltage increases. When the FB/OLP pin voltage SANKEN ELECTRIC CO.,LTD. 17 STR-W6000S Series increases to VFB(OLP) = 8.1 V or more for the OLP delay time, tOLP = 68 ms or more, the OLP function is activated, the IC stops switching operation. During OLP operation, Bias Assist Function is disabled. Thus, VCC pin voltage decreases to VCC(OFF), the control circuit stops operation. After that, the IC reverts to the initial state by UVLO circuit, and the IC starts operation when VCC pin voltage increases to VCC(ON) by startup current. Thus the intermittent operation by UVLO is repeated in OLP state. This intermittent operation reduces the stress of parts such as power MOSFET and secondary side rectifier diode. In addition, this operation reduces power consumption because the switching period in this intermittent operation is short compared with oscillation stop period. When the abnormal condition is removed, the IC returns to normal operation automatically. VCC( NORMAL ) 29 (V) (7) where, VOUT(NORMAL): Output voltage in normal operation VCC(NORMAL): VCC pin voltage in normal operation VCC pin voltage VCC(OVP) VCC(ON) VCC(OFF) Drain current, ID Figure 9-18 OVP operational waveforms STR-W6000S - DS Rev.2.0 Aug. 07, 2014 10. Design Notes 10.1 External Components VAC CRD clamp snubber BR1 C6 C1 T1 R1 P D1 U1 D/ST 2 S/OCP VCC GND FB/OLP BR When a voltage between VCC pin and GND pin increases to VCC(OVP) = 29 V or more, OVP function is activated, the IC stops switching operation. During OVP operation, the Bias Assist function is disabled, the intermittent operation by UVLO is repeated (refer to Section 9.10). When the fault condition is removed, the IC returns to normal operation automatically (refer to Figure 9-18). In case the VCC pin voltage is provided by using auxiliary winding of transformer, the overvoltage conditions such as output voltage detection circuit open can be detected because the VCC pin voltage is proportional to output voltage. The approximate value of output voltage VOUT(OVP) in OVP condition is calculated by using Equation (7). VOUT ( NORMAL ) When the temperature of control circuit increases to Tj(TSD) = 130 °C or more, Thermal Shutdown function (TSD) is activated, the IC stops switching operation. During TSD operation, the Bias Assist function is disabled, the intermittent operation by UVLO is repeated (refer to Section 9.10). When the fault condition is removed and the temperature decreases to less than Tj(TSD), the IC returns to normal operation automatically. Take care to use properly rated, including derating as necessary and proper type of components. 9.11 Overvoltage Protection (OVP) VOUT(OVP) 9.12 Thermal Shutdown Function (TSD) 1 RA RB 3 4 5 6 7 D2 R2 C5 C2 C3 C4 ROCP C(RC) damper snubber D RC PC1 Figure 10-1 The IC peripheral circuit Input and Output Electrolytic Capacitor Apply proper derating to ripple current, voltage, and temperature rise. Use of high ripple current and low impedance types, designed for switch mode power supplies, is recommended. S/OCP Pin Peripheral Circuit In Figure 10-1, ROCP is the resistor for the current detection. A high frequency switching current flows to ROCP, and may cause poor operation if a high inductance resistor is used. Choose a low inductance and high surge-tolerant type. VCC Pin Peripheral Circuit The value of C2 in Figure 10-1 is generally recommended to be 10µ to 47μF (refer to Section 9.1 Startup Operation, because the startup time is determined by the value of C2). In actual power supply circuits, there are cases in which the VCC pin voltage fluctuates in proportion to the output current, IOUT (see Figure 10-2), and the Overvoltage Protection function (OVP) on the VCC SANKEN ELECTRIC CO.,LTD. 18 STR-W6000S Series pin may be activated. This happens because C2 is charged to a peak voltage on the auxiliary winding D, which is caused by the transient surge voltage coupled from the primary winding when the power MOSFET turns off. For alleviating C2 peak charging, it is effective to add some value R2, of several tenths of ohms to several ohms, in series with D2 (see Figure 10-1). The optimal value of R2 should be determined using a transformer matching what will be used in the actual application, because the variation of the auxiliary winding voltage is affected by the transformer structural design. Without R2 VCC pin voltage ・ A damper snubber circuit of a capacitor (C) or a resistor-capacitor (RC) combination should be added between the D/ST pin and the S/OCP pin. In case the damper snubber circuit is added, this components should be connected near D/ST pin and S/OCP pin. Peripheral circuit of secondary side shunt regulator Figure 10-3 shows the secondary side detection circuit with the standard shunt regulator IC (U51). C52 and R53 are for phase compensation. The value of C52 and R53 are recommended to be around 0.047μF to 0.47μF and 4.7 kΩ to 470 kΩ, respectively. They should be selected based on actual operation in the application. L51 T1 VOUT (+) D51 With R2 PC1 Output current, IOUT R55 C51 Figure 10-2 Variation of VCC pin voltage and power S ▫ Select a resistor designed against electromigration, or ▫ Use a combination of resistors in series for that to reduce each applied voltage See the section 9.8 about the AC input voltage detection function and the components around BR pin. When the detection resistor (RA, RB, RC) value is decreased and the C4 value is increased to prevent unstable operation resulting from noise at the BR pin, pay attention to the low efficiency and the slow response of BR pin. Snubber Circuit In case the surge voltage of VDS is large, the circuit should be added as follows (see Figure 10-1); ・ A clamp snubber circuit of a capacitor-resistordiode (CRD) combination should be added on the primary winding P. STR-W6000S - DS Rev.2.0 Aug. 07, 2014 R52 C53 C52 R53 FB/OLP Pin Peripheral Circuit C3 is for high frequency noise reduction and phase compensation, and should be connected close to these pins. The value of C3 is recommended to be about 2200 pF to 0.01µF, and should be selected based on actual operation in the application. BR pin peripheral circuit Because RA and RB (see Figure 10-1) are applied high voltage and are high resistance, the following should be considered according to the requirement of the application: R54 R51 U51 R56 (-) Figure 10-3 Peripheral circuit of secondary side shunt regulator (U51) Transformer Apply proper design margin to core temperature rise by core loss and copper loss. Because the switching currents contain high frequency currents, the skin effect may become a consideration. Choose a suitable wire gauge in consideration of the RMS current and a current density of 4 to 6 A/mm2. If measures to further reduce temperature are still necessary, the following should be considered to increase the total surface area of the wiring: ▫ Increase the number of wires in parallel. ▫ Use litz wires. ▫ Thicken the wire gauge. In the following cases, the surge of VCC pin voltage becomes high. ▫ The surge voltage of primary main winding, P, is high (low output voltage and high output current power supply designs) ▫ The winding structure of auxiliary winding, D, is susceptible to the noise of winding P. SANKEN ELECTRIC CO.,LTD. 19 STR-W6000S Series When the surge voltage of winding D is high, the VCC pin voltage increases and the Overvoltage Protection function (OVP) may be activated. In transformer design, the following should be considered; ▫ The coupling of the winding P and the secondary output winding S should be maximized to reduce the leakage inductance. ▫ The coupling of the winding D and the winding S should be maximized. ▫ The coupling of the winding D and the winding P should be minimized. In the case of multi-output power supply, the coupling of the secondary-side stabilized output winding, S1, and the others (S2, S3…) should be maximized to improve the line-regulation of those outputs. Figure 10-4 shows the winding structural examples of two outputs. Winding structural example (a): S1 is sandwiched between P1 and P2 to maximize the coupling of them for surge reduction of P1 and P2. D is placed far from P1 and P2 to minimize the coupling to the primary for the surge reduction of D. Winding structural example (b) P1 and P2 are placed close to S1 to maximize the coupling of S1 for surge reduction of P1 and P2. D and S2 are sandwiched by S1 to maximize the coupling of D and S1, and that of S1 and S2. This structure reduces the surge of D, and improves the line-regulation of outputs. Bobbin P1 S1 P2 S2 D Margin tape Margin tape Bobbin (1) Main Circuit Trace Layout This is the main trace containing switching currents, and thus it should be as wide trace and small loop as possible. If C1 and the IC are distant from each other, placing a capacitor such as film capacitor (about 0.1 μF and with proper voltage rating) close to the transformer or the IC is recommended to reduce impedance of the high frequency current loop. (2) Control Ground Trace Layout Since the operation of IC may be affected from the large current of the main trace that flows in control ground trace, the control ground trace should be separated from main trace and connected at a single point grounding of point A in Figure 10-5 as close to the ROCP pin as possible. (3) VCC Trace Layout This is the trace for supplying power to the IC, and thus it should be as small loop as possible. If C2 and the IC are distant from each other, placing a capacitor such as film capacitor Cf (about 0.1 μF to 1.0 μF) close to the VCC pin and the GND pin is recommended. (5) Peripheral components of the IC The components for control connected to the IC should be placed as close as possible to the IC, and should be connected as short as possible to the each pin. Winding structural example (a) D S2 S1 P2 Margin tape Winding structural example (b) Figure 10-4 Winding structural examples STR-W6000S - DS Rev.2.0 Aug. 07, 2014 Since the PCB circuit trace design and the component layout significantly affects operation, EMI noise, and power dissipation, the high frequency PCB trace should be low impedance with small loop and wide trace. In addition, the ground traces affect radiated EMI noise, and wide, short traces should be taken into account. Figure 10-5 shows the circuit design example. (4) ROCP Trace Layout ROCP should be placed as close as possible to the S/OCP pin. The connection between the power ground of the main trace and the IC ground should be at a single point ground (point A in Figure 10-5) which is close to the base of ROCP. Margin tape P1 S1 10.2 PCB Trace Layout and Component Placement (6) Secondary Rectifier Smoothing Circuit Trace Layout: This is the trace of the rectifier smoothing loop, carrying the switching current, and thus it should be as wide trace and small loop as possible. If this trace is thin and long, inductance resulting from the loop may increase surge voltage at turning off the power MOSFET. Proper rectifier smoothing trace layout helps to increase margin against the power MOSFET SANKEN ELECTRIC CO.,LTD. 20 STR-W6000S Series breakdown voltage, and reduces stress on the clamp snubber circuit and losses in it. (7) Thermal Considerations Because the power MOSFET has a positive thermal coefficient of RDS(ON), consider it in thermal design. Since the copper area under the IC and the D/ST pin trace act as a heatsink, its traces should be as wide as possible. (1) Main trace should be wide trace and small loop (6) Main trace of secondary side should be wide trace and small loop T1 C6 D51 R1 P C1 C51 D1 S U1 D/ST 2 S/OCP VCC GND FB/OLP BR RA (3) Loop of the power supply should be small RB 3 4 5 6 7 1 D2 C5 (7)Trace of D/ST pin should be wide for heat release C3 ROCP PC1 C2 C4 R2 D RC CY A (4)ROCP should be as close to S/OCP pin as possible. (2) Control GND trace should be connected at a single point as close to the ROCP as possible (5)The components connected to the IC should be as close to the IC as possible, and should be connected as short as possible Figure 10-5 Peripheral circuit example around the IC STR-W6000S - DS Rev.2.0 Aug. 07, 2014 SANKEN ELECTRIC CO.,LTD. 21 STR-W6000S Series 11. Pattern Layout Example The following show the PCB pattern layout example and the schematic of the four outputs circuit using STR-W6000S series without Brown-In and Brown-Out function. The above circuit symbols correspond to these of Figure 11-1. Only the parts in the schematic are used. Other parts in PCB are leaved open. C11 and D4 are shorted. Figure 11-1 PCB circuit trace layout example CN51 D56 T1 3 OUT4(+) S4 C65 C64 R66 4 CN1 1 JW1 F1 JW54 D54 L1 Z54 C4 TH1 D1 C1 5 OUT3(+) Z53 C2 S3 C60 JW3 C61 R63 JW56 C62 D55 R64 C63 R65 6 C3 C6 C5 3 R1 D52 TK1 JW55 8 OUT2(+) P1 D53 JW61 S2 C56 C57 D2 R60 R61 C58 C59 R59 D51 R51 D/ST 2 S/OCP VCC GND FB/OLP BR R52 C52 2 OUT1(+) 1 OUT1(-) R57 R54 PC1 S1 OUT2(-) JW59 C51 C7 3 4 5 6 7 1 L51 R2 D C8 7 R58 JW57 JW58 D4 D3 R62 JW53 Z1 STR-W6000S OUT3(-) L52 Z52 JW52 OUT4(-) JW51 L53 R55 C53 C55 C54 R53 C13 Z51 PC1 R5 C11 C10 R56 C12 TK2 Figure 11-2 Circuit schematic for PCB circuit trace layout STR-W6000S - DS Rev.2.0 Aug. 07, 2014 SANKEN ELECTRIC CO.,LTD. 22 STR-W6000S Series 12. Reference Design of Power Supply As an example, the following show the power supply specification, the circuit schematic, the bill of materials, and the transformer specification. Power supply specification IC Input voltage Maximum output power Output 1 Output 2 STR-W6053S AC85 V to AC265 V 56 W (70.4 WPEAK) 8 V / 2.5 A 12 V / 3 A (4.2 APEAK) Circuit schematic VAC F1 L1 C1 BR1 C2 VDC C3 C4 OUT1(+) 12V/4.2A S1 P1 R1 D52 T1 C55 TH1 C56 C57 R57 P2 D1 S2 OUT1(-) L51 D51 OUT2(+) 8V/2.5A R4 R54 U1 C51 D/ST 2 S/OCP VCC GND FB/OLP BR C6 C7 PC1 C8 R52 S3 D2 C5 R2 R51 R55 R6 3 4 5 6 7 1 PC1 R5 C54 C52 R3 C53 U51 D R53 R56 R7 OUT2(-) C9 TC_STR-W6000S_4_R1 Bill of materials Symbol F1 L1 TH1 BR1 D1 D2 C1 C2 C3 C4 C5 C6 C7 C8 C9 R1 R2 R3 R4 R5 R6 (2) (2) (2) (2) (2) (2) (2) (3) (3) (3) (3) Part type Ratings(1) Fuse CM inductor AC 250 V, 6 A 2.2 mH NTC thermistor Short General Fast recovery Fast recovery Film, X2 Film, X2 Electrolytic Ceramic Ceramic Electrolytic Ceramic Ceramic Ceramic, Y1 Metal oxide General General General General 600 V, 6 A 1000 V, 0.5 A 200 V, 1 A 0.1 μF, 275 V 0.1 μF, 275 V 220 μF, 400 V 3300 pF, 2 kV Open 22 μF, 50V 0.01 μF 1000 pF 2200 pF, 250 V 56 kΩ, 2 W 0.27 Ω, 1 W 5.6 Ω 2.2MΩ 2.2MΩ General 2.2MΩ Recommended Sanken Parts Symbol PC1 U1 EG01C AL01Z Part type Ratings(1) Photo-coupler IC PC123 or equiv － See the specification 5 μH 100 V, 10 A 150 V, 10 A 470 pF, 1 kV 1000 μF, 16 V 0.15 μF, 50 V 1000 µF, 16 V 470 pF, 1 kV 1500 μF, 25 V 1500 μF, 25 V 1.5 kΩ 1 kΩ 33 kΩ 3.9 kΩ 22 kΩ 6.8 kΩ Open VREF = 2.5 V TL431or equiv T1 Transformer L51 D51 D52 C51 C52 C53 C54 C55 C56 C57 R51 R52 R53 R54 R55 R56 R57 Inductor Schottky Fast recovery Ceramic Electrolytic Ceramic Electrolytic Ceramic Electrolytic Electrolytic General General General General, 1% General, 1% General, 1% General U51 (2) (2) (2) (2) (2) Shunt regulator Recommended Sanken Parts STR-W6053S FMEN-210A FMEN-210B (2) R7 General 470kΩ Unless otherwise specified, the voltage rating of capacitor is 50 V or less and the power rating of resistor is 1/8 W or less. (2) It is necessary to be adjusted based on actual operation in the application. (3) Resistors applied high DC voltage and of high resistance are recommended to select resistors designed against electromigration or use combinations of resistors in series for that to reduce each applied voltage, according to the requirement of the application. (1) STR-W6000S - DS Rev.2.0 Aug. 07, 2014 SANKEN ELECTRIC CO.,LTD. 23 STR-W6000S Series Transformer specification ▫ Primary inductance, LP ▫ Core size ▫ Al-value ▫ Winding specification ：LP：315 μH ：EER28L ：163 nH/N2 (Center gap of about 0.8 mm) Symbol Number of turns (T) Wire diameter Primary winding 1 P1 26 TEX – φ 0.35 × 2 Primary winding 2 P2 18 TEX – φ 0.35 × 2 Auxiliary winding D 10 TEX – φ 0.23 × 2 Output winding 1 S1 7 φ 0.4 × 4 Output winding 2 S2 7 φ 0.4 × 4 Output winding 3 S3 5 φ 0.4 × 4 Winding (mm) VDC P1 S3 Bobbin OUT1(+) 12V P2 D/ST VCC S1 P2 Two-layers, solenoid winding Single-layer, solenoid winding Single-layer, space winding Single-layer, space winding Single-layer, space winding Single-layer, space winding OUT1(-) P1 S2 D S1 Construction S2 D OUT2(+) 8V GND S3 OUT2(-) Cross-section view STR-W6000S - DS Rev.2.0 Aug. 07, 2014 ●: Start at this pin SANKEN ELECTRIC CO.,LTD. 24 STR-W6000S Series OPERATING PRECAUTIONS In the case that you use Sanken products or design your products by using Sanken products, the reliability largely depends on the degree of derating to be made to the rated values. Derating may be interpreted as a case that an operation range is set by derating the load from each rated value or surge voltage or noise is considered for derating in order to assure or improve the reliability. In general, derating factors include electric stresses such as electric voltage, electric current, electric power etc., environmental stresses such as ambient temperature, humidity etc. and thermal stress caused due to self-heating of semiconductor products. For these stresses, instantaneous values, maximum values and minimum values must be taken into consideration. In addition, it should be noted that since power devices or IC’s including power devices have large self-heating value, the degree of derating of junction temperature affects the reliability significantly. Because reliability can be affected adversely by improper storage environments and handling methods, please observe the following cautions. Cautions for Storage Ensure that storage conditions comply with the standard temperature (5 to 35°C) and the standard relative humidity (around 40 to 75%); avoid storage locations that experience extreme changes in temperature or humidity. Avoid locations where dust or harmful gases are present and avoid direct sunlight. Reinspect for rust on leads and solderability of the products that have been stored for a long time. Cautions for Testing and Handling When tests are carried out during inspection testing and other standard test periods, protect the products from power surges from the testing device, shorts between the product pins, and wrong connections. Ensure all test parameters are within the ratings specified by Sanken for the products. Remarks About Using Thermal Silicone Grease When thermal silicone grease is used, it shall be applied evenly and thinly. If more silicone grease than required is applied, it may produce excess stress. The thermal silicone grease that has been stored for a long period of time may cause cracks of the greases, and it cause low radiation performance. In addition, the old grease may cause cracks in the resin mold when screwing the products to a heatsink. Fully consider preventing foreign materials from entering into the thermal silicone grease. When foreign material is immixed, radiation performance may be degraded or an insulation failure may occur due to a damaged insulating plate. The thermal silicone greases that are recommended for the resin molded semiconductor should be used. Our recommended thermal silicone grease is the following, and equivalent of these. Type Suppliers G746 Shin-Etsu Chemical Co., Ltd. YG6260 Momentive Performance Materials Japan LLC SC102 Dow Corning Toray Co., Ltd. Cautions for Mounting to a Heatsink When the flatness around the screw hole is insufficient, such as when mounting the products to a heatsink that has an extruded (burred) screw hole, the products can be damaged, even with a lower than recommended screw torque. For mounting the products, the mounting surface flatness should be 0.05mm or less. Please select suitable screws for the product shape. Do not use a flat-head machine screw because of the stress to the products. Self-tapping screws are not recommended. When using self-tapping screws, the screw may enter the hole diagonally, not vertically, depending on the conditions of hole before threading or the work situation. That may stress the products and may cause failures. Recommended screw torque: 0.588 to 0.785 N･m (6 to 8 kgf･cm). For tightening screws, if a tightening tool (such as a driver) hits the products, the package may crack, and internal stress fractures may occur, which shorten the lifetime of the electrical elements and can cause catastrophic failure. Tightening with an air driver makes a substantial impact. In addition, a screw torque higher than the set torque can be applied and the package may be damaged. Therefore, an electric driver is recommended. When the package is tightened at two or more places, first pre-tighten with a lower torque at all places, then tighten with the specified torque. When using a power driver, torque control is mandatory. STR-W6000S - DS Rev.2.0 Aug. 07, 2014 SANKEN ELECTRIC CO.,LTD. 25 STR-W6000S Series Soldering When soldering the products, please be sure to minimize the working time, within the following limits: • 260 ± 5 °C 10 ± 1 s (Flow, 2 times) • 380 ± 10 °C 3.5 ± 0.5 s (Soldering iron, 1 time) Soldering should be at a distance of at least 1.5 mm from the body of the products. Electrostatic Discharge When handling the products, the operator must be grounded. Grounded wrist straps worn should have at least 1MΩ of resistance from the operator to ground to prevent shock hazard, and it should be placed near the operator. Workbenches where the products are handled should be grounded and be provided with conductive table and floor mats. When using measuring equipment such as a curve tracer, the equipment should be grounded. When soldering the products, the head of soldering irons or the solder bath must be grounded in order to prevent leak voltages generated by them from being applied to the products. The products should always be stored and transported in Sanken shipping containers or conductive containers, or be wrapped in aluminum foil. IMPORTANT NOTES The contents in this document are subject to changes, for improvement and other purposes, without notice. Make sure that this is the latest revision of the document before use. Application examples, operation examples and recommended examples described in this document are quoted for the sole purpose of reference for the use of the products herein and Sanken can assume no responsibility for any infringement of industrial property rights, intellectual property rights, life, body, property or any other rights of Sanken or any third party which may result from its use. Unless otherwise agreed in writing by Sanken, Sanken makes no warranties of any kind, whether express or implied, as to the products, including product merchantability, and fitness for a particular purpose and special environment, and the information, including its accuracy, usefulness, and reliability, included in this document. Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to the society due to device failure or malfunction. Sanken products listed in this document are designed and intended for the use as components in general purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). When considering the use of Sanken products in the applications where higher reliability is required (transportation equipment and its control systems, traffic signal control systems or equipment, fire/crime alarm systems, various safety devices, etc.), and whenever long life expectancy is required even in general purpose electronic equipment or apparatus, please contact your nearest Sanken sales representative to discuss, prior to the use of the products herein. The use of Sanken products without the written consent of Sanken in the applications where extremely high reliability is required (aerospace equipment, nuclear power control systems, life support systems, etc.) is strictly prohibited. When using the products specified herein by either (i) combining other products or materials therewith or (ii) physically, chemically or otherwise processing or treating the products, please duly consider all possible risks that may result from all such uses in advance and proceed therewith at your own responsibility. Anti radioactive ray design is not considered for the products listed herein. Sanken assumes no responsibility for any troubles, such as dropping products caused during transportation out of Sanken’s distribution network. The contents in this document must not be transcribed or copied without Sanken’s written consent. STR-W6000S - DS Rev.2.0 Aug. 07, 2014 SANKEN ELECTRIC CO.,LTD. 26