2N5086 - Taitron Components, Inc.

Small Signal Low
Noise Transistors (PNP)
2N5086/2N5087
Small Signal Low Noise Transistors (PNP)
Features
• PNP silicon epitaxial transistor for switching and
amplifier applications
• This device is designed for low level, high gain, low noise
general purpose applications at collector currents to 50mA
• RoHS compliance
Mechanical Data
TO-92
Case:
TO-92, Plastic Package
Terminals:
Solderable per MIL-STD-202G, Method 208
Weight:
0.18 gram
Absolute Maximum Ratings * (T Ambient=25ºC unless noted otherwise)
Symbol
Description
2N5086
2N5087
Unit
VCEO
Collector-Emitter Voltage
50
V
VCBO
Collector-Base Voltage
50
V
VEBO
Emitter-Base Voltage
3.0
V
Collector Current Continuous
100
mA
-55 to +150
°C
IC
TJ ,TSTG
Operation and Storage Junction Temperature
Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be
impaired.
Notes
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or
low duty cycle operations.
3. All voltages (V) and currents (A) are negative polarity for PNP transistors.
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON
Fax: (800)-TAITFAX
(800)-824-8766
(800)-824-8329
(661)-257-6060
(661)-257-6415
Rev. B/NX
Page 1 of 5
Small Signal Low Noise Transistors (PNP)
2N5086/2N5087
Thermal Characteristics (T Ambient=25ºC unless noted otherwise)
Symbol
Description
2N5086
2N5087
Unit
Power Dissipation at TA=25°C
625
mW
Derate above 25°C
5.0
mW/° C
Power Dissipation at TC=25°C
1.5
W
Derate above 25°C
12
mW/° C
RθJA
Thermal Resistance Junction to Ambient Air
200
° C/W
RθJC
Thermal Resistance Junction to Case
83.3
° C/W
PD
PD
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
Off Characteristics
Symbol
Description
Min.
Max.
Unit
Conditions
V(BR)CBO
Collector-Base Breakdown Voltage
50
-
V
IC=100µA, IE=0
V(BR)CEO*
Collector-Emitter Breakdown Voltage
50
-
V
IC=1mA, IB=0
-
10
-
50
-
50
ICBO
Collector Cut–Off Current
IEBO
Emitter Cut–Off Current
nA
VCB=10V, IE=0
VCB=35V, IE=0
nA
VEB=3V, IC=0
Rev. B/NX
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Page 2 of 5
Small Signal Low Noise Transistors (PNP)
2N5086/2N5087
On Characteristics
Symbol
hFE
Description
D.C. Current Gain
Min.
Max.
2N5086
150
500
2N5087
250
800
2N5086
150
-
2N5087
250
-
2N5086
150
-
2N5087
250
-
Unit
Conditions
VCE=5V, IC=100µA
VCE=5V, IC=1mA
*VCE=5V, IC=10mA
VCE(sat)
Collector Emitter Saturation Voltage
-
0.3
V
IC=10mA, IB=1mA
VBE(on)
Base Emitter Saturation Voltage
-
0.85
V
IC=1mA, VCE=5V
Min.
Max.
Unit
Conditions
40
-
MHz
VCE=5V, IC=500µA,
f=20MHz
-
4.0
pF
VCB=5V, IE=0, f=1KHz
2N5086
150
600
2N5087
250
900
2N5086
-
3
2N5087
-
2
2N5086
-
3
2N5087
-
2
Small signal Characteristics
Symbol
fT
Description
Current Gain-Bandwidth Product
Ccb
Collector-Base Capacitance
hfe
Small Signal Current
Gain
NF
Noise Figure
VCE=5V, IC=1mA
f=1KHz
VCE=5V, IC=20µA,
Rs=10KΩ,
f=10Hz to 15.7KHz
dB
VCE=5V, IC=100µA,
Rs=3KΩ,
f=1KHz
*Pulse Test: Pulse Width<300µs, Duty Cycle<2%
Rev. B/NX
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Page 3 of 5
Small Signal Low Noise Transistors (PNP)
2N5086/2N5087
Dimensions in mm
TO-92
Rev. B/NX
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Page 4 of 5
Small Signal Low Noise Transistors (PNP)
2N5086/2N5087
How to contact us:
US HEADQUARTERS
28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162
Tel: (800) TAITRON (800) 824-8766 (661) 257-6060
Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415
Email: [email protected]
Http://www.taitroncomponents.com
TAITRON COMPONENTS MEXICO, S.A .DE C.V.
BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P.
42970 MEXICO
Tel: +52-55-5560-1519
Fax: +52-55-5560-2190
TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA
RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL
Tel: +55-11-5574-7949
Fax: +55-11-5572-0052
TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE
METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA
Tel: +86-21-5424-9942
Fax: +86-21-5424-9931
Rev. B/NX
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Page 5 of 5