SMD Power Transistor (PNP) MJD45H11 SMD Power Transistor (PNP) Features • Designed for general purpose power and switching applications • RoHS compliance D-PACK (TO-252) Mechanical Data Case: Terminals: Weight: D-PACK(TO-252), Plastic Package Solderable per MIL-STD-202G, Method 208 0.3 grams Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description Marking Code MJD45H11 Unit MJD45H11 VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V Collector Current Continuous 8 A Collector Current Peak 16 A Power Dissipation at TC=25°C 20 W Derate above 25°C 0.16 W/°C Power Dissipation at TA=25°C 1.75 W Derate above 25°C 0.014 W/°C -55 to +150 °C IC ICP PD *PD TJ, TSTG Operating and Storage Junction Temperature Range TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFAX (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/CZ Page 1 of 4 SMD Power Transistor (PNP) MJD45H11 Thermal Characteristics Symbol Description MJD45H11 Unit RthJC Thermal Resistance from Junction to Case 6.25 °C/W *RthJA Thermal Resistance from Junction to Ambient 71.4 °C/W Lead Temperature for Soldering 260 °C TL Note: *These ratings are applicable when surface mounted on the minimum pad sizes recommended. Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Off Characteristics Symbol Description Min. Max. Unit Conditions VCEO Collector Emitter Voltage 80 - V IC=1mA, IB=0 ICES Collector Cut-off Current - 10 µA VCE=Rated VCEO, VEB=0 IEBO Emitter Cut-off Current - 50 µA VEB=5V, IC=0 Min. Max. Unit Conditions On Characteristics Symbol Description VCE(sat) Collector Emitter Saturation Voltage - 1.85 V IC=8A, IB=0.4A VBE(sat) Base Emitter Saturation Voltage - 1.50 V IC=8A, IB=0.8A 60 - VCE=1V, IC=2A 40 - VCE=1V, IC=4A Min. Typ. Unit Conditions Collector Capacitance - 230 pF IE=0, VCB=10V, f=1MHz Current Gain Bandwidth Product - 40 MHz hFE D.C. Current Gain Dynamic Characteristics Symbol Ccb fT Description IC=0.5A, VCE=10V, f=20MHz Rev. A/CZ www.taitroncomponents.com Page 2 of 4 SMD Power Transistor (PNP) MJD45H11 Switching Times Symbol Min. Typ. Unit Conditions Delay and Rise Time - 135 ns IC=5A, IB1=0.5A ts Storage Time - 500 ns IC=5A, IB1= IB2=0.5A tf Fall Time - 100 ns IC=5A, IB1= IB2=0.5A t d + tr Description Dimensions in mm D-PACK (TO-252) Rev. A/CZ www.taitroncomponents.com Page 3 of 4 SMD Power Transistor (PNP) MJD45H11 How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: [email protected] Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. A/CZ www.taitroncomponents.com Page 4 of 4