SMD General Purpose Transistor (PNP) MMBT8550 SMD General Purpose Transistor (PNP) Features PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data Case: SOT-23, Plastic Package Terminals: Weight: SOT-23 Solderable per MIL-STD-202G, Method 208 0.008 gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MMBT8550 Unit Conditions VCEO Collector-Emitter Voltage -25 V VCBO Collector-Base Voltage -40 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current -1.5 A 225 mW TA=25 ˚C PD Total Device Power Dissipation(Note 1) 1.8 mW/°C Derate above 25 ˚C Thermal Resistance, Junction to Ambient 556 °C /W Total Device Power Dissipation, Alumina Substrate (Note 2) 300 mW TA=25 ˚C 2.4 mW/°C Derate above 25 ˚C Thermal Resistance, Junction to Ambient 417 °C /W Junction Temperature -55 to +150 °C Storage Temperature Range -55 to +150 °C RθJA PD RθJA TJ TSTG Note: 1. FR-5 Board=25.4 x 19.05 x 1.58 mm (1.0 x 0.75 x 0.062 inches.) 2. Alumina Substrate=10.16 x 7.62 x 0.61 mm (0.4 x 0.3 x 0.024 inches.) 99.5% alumina. TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFAX (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. B/PG Page 1 of 4 SMD General Purpose Transistor (PNP) MMBT8550 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Off Characteristics Symbol Description Min. Max. Unit Conditions V(BR)CEO Collector-Emitter Breakdown Voltage -25 - V IC=-1mA, IB=0 V(BR)CBO Collector-Base Breakdown Voltage -40 - V IC=-0.1mA, IE=0 V(BR)EBO Emitter-Base Breakdown Voltage -5.0 - V IE=-0.1mA, IC=0 ICBO Base Cut-off Current - -0.15 µA VCB=-35V, IE=0 IEBO Emitter Cut-off Current - -0.15 µA VEB=-4.0V, IC=0 Min. Max. Unit Conditions 100 600 - -0.5 On Characteristics Symbol hFE VCE(sat) Description D.C. Current Gain Collector-Emitter Saturation Voltage VCE=-1V, IC=-100mA V IC=-800mA, IB=-80mA Classification Of hFE Rank P Q R S Range 100-200 150-300 200-400 300-600 Marking 1HB 1HD 1HF 1HH Rev. B/PG www.taitroncomponents.com Page 2 of 4 SMD General Purpose Transistor (PNP) MMBT8550 Typical Characteristics Curves Fig.1- Static Characteristic DC Current Gain hFE Collector Current IC (mA) Fig.2- DC Current Gain Collector Current IC (mA) Fig.4- Base-Emitter On Voltage Fig.3- Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Current IC (mA) Saturation Voltage VCE(sat), VBE(sat) (V) Collector-Emitter Voltage (V) Collector Current IC (mA) Base-Emitter Voltage (V) Current Gain-Bandwidth Product fT(MHz) Fig.5- Current Gain Bandwidth Product Number of Cycles at 60HZ Collector Current IC (mA) Rev. B/PG www.taitroncomponents.com Page 3 of 4 SMD General Purpose Transistor (PNP) MMBT8550 Dimensions in mm SOT-23 How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: [email protected] Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. B/PG www.taitroncomponents.com Page 4 of 4