2N5088 - Taitron Components, Inc.

Small Signal Low
Noise Transistors (NPN)
2N5088/2N5089
Small Signal Low Noise Transistors (NPN)
Features
• NPN silicon epitaxial transistor for switching and
amplifier applications
• This device is designed for low noise, high gain,
general purpose applications at collector currents from 1µA to 50mA
• RoHS compliance
TO-92
Mechanical Data
Case:
TO-92, Plastic Package
Terminals:
Solderable per MIL-STD-202G, Method 208
Weight:
0.18 gram
Absolute Maximum Ratings* (T Ambient=25ºC unless noted otherwise)
Symbol
Description
2N5088
2N5089
Unit
VCEO
Collector-Emitter Voltage
30
25
V
VCBO
Collector-Base Voltage
35
30
V
VEBO
Emitter-Base Voltage
4.5
V
Collector Current Continuous
100
mA
-55 to +150
°C
IC
TJ ,TSTG
Operation and Storage Junction Temperature
Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be
impaired.
Notes
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or
low duty cycle operations.
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON
Fax: (800)-TAITFAX
(800)-824-8766
(800)-824-8329
(661)-257-6060
(661)-257-6415
Rev. B/NX
Page 1 of 5
Small Signal Low Noise Transistors (NPN)
2N5088/2N5089
Thermal Characteristics (T Ambient=25ºC unless noted otherwise)
Symbol
Description
2N5088
2N5089
Unit
Power Dissipation at TA=25°C
625
mW
Derate above 25°C
5.0
mW/° C
Power Dissipation at TC=25°C
1.5
W
Derate above 25°C
12
mW/° C
RθJA
Thermal Resistance Junction to Ambient Air
(Note 1)
357
° C/W
RθJC
Thermal Resistance Junction to Case
125
° C/W
-55 to +150
°C
PD
PD
TJ ,TSTG
Operation and Storage Junction Temperature
Range
Note: 1. Measured with the device soldered into a typical printed circuit board.
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
Off Characteristics
Symbol
Description
2N5088
2N5089
Min.
Max.
Min.
Max.
Unit
Conditions
V(BR)CBO
Collector-Base Breakdown Voltage
35
-
30
-
V
IC=100µA, IE=0
V(BR)CEO*
Collector-Emitter Breakdown Voltage
30
-
25
-
V
IC=1mA, IB=0
-
50
-
50
ICBO
Collector Cut–Off Current
IEBO
Emitter Cut–Off Current
VCB=20V,
IE=0
-
50
VEB=3V,
IC=0
VCB=15V,
IE=0
-
nA
100
VEB=4.5V,
IC=0
nA
Rev. B/NX
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Page 2 of 5
Small Signal Low Noise Transistors (NPN)
2N5088/2N5089
On Characteristics
Symbol
hFE
Description
D.C. Current Gain
2N5088
2N5089
Unit
Conditions
Min.
Max.
Min.
Max.
300
900
400
1200
VCE=5V, IC=0.1mA
350
-
450
-
VCE=5V, IC=1mA
300
-
400
-
*VCE=5V, IC=10mA
VCE(sat)
Collector Emitter Saturation Voltage
-
0.5
-
0.5
V
IC=10mA, IB=1mA
VBE(on)*
Base Emitter Saturation Voltage
-
0.8
-
0.8
V
IC=10mA, VCE=5V
Unit
Conditions
Small signal Characteristics
Symbol
fT
Description
Current Gain-Bandwidth Product
2N5088
2N5089
Min.
Max.
Min.
Max.
50
-
50
-
MHz
VCE=5V, IC=0.5mA,
f=20MHz
Ccb
Collector-Base Capacitance
-
4.0
-
4.0
pF
VCB=5V, f=100KHz
Ceb
Emitter-Base Capacitance
-
10
-
10
pF
VEB=0.5V, f=100KHz
hfe
Small Signal Current Gain
350
1400
450
1800
NF
Noise Figure
-
3.0
-
2.0
dB
VCE=5V, IC=1mA
f=1KHz
VCE=5V, IC=100µA,
Rs=10KΩ,
f=10Hz to 15.7 KHz
*Pulse Test: Pulse Width<300µs, Duty Cycle<2%
Rev. B/NX
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Page 3 of 5
Small Signal Low Noise Transistors (NPN)
2N5088/2N5089
Dimensions in mm
TO-92
Rev. B/NX
www.taitroncomponents.com
Page 4 of 5
Small Signal Low Noise Transistors (NPN)
2N5088/2N5089
How to contact us:
US HEADQUARTERS
28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162
Tel: (800) TAITRON (800) 824-8766 (661) 257-6060
Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415
Email: [email protected]
Http://www.taitroncomponents.com
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42970 MEXICO
Tel: +52-55-5560-1519
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Tel: +55-11-5574-7949
Fax: +55-11-5572-0052
TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE
METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA
Tel: +86-21-5424-9942
Fax: +86-21-5424-9931
Rev. B/NX
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Page 5 of 5