ON Semiconductor Amplifier Transistors 2N5088 2N5089 NPN Silicon MAXIMUM RATINGS Rating Symbol 2N5088 2N5089 Unit Collector–Emitter Voltage VCEO 30 25 Vdc Collector–Base Voltage VCBO 35 30 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Collector Current — Continuous IC 50 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watts mW/°C TJ, Tstg –55 to +150 °C Operating and Storage Junction Temperature Range 1 2 CASE 29–11, STYLE 1 TO–92 (TO–226AA) COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case 3 Symbol Max Unit RJA(1) 200 °C/W RJC 83.3 °C/W 2 BASE 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 30 25 — — 35 30 — — — — 50 50 — — 50 100 Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(2) (IC = 1.0 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = 100 Adc, IE = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 15 Vdc, IE = 0) V(BR)CEO 2N5088 2N5089 Vdc V(BR)CBO 2N5088 2N5089 Vdc ICBO 2N5088 2N5089 Emitter Cutoff Current (VEB(off) = 3.0 Vdc, IC = 0) (VEB(off) = 4.5 Vdc, IC = 0) nAdc IEBO nAdc 1. RθJA is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%. Semiconductor Components Industries, LLC, 2001 November, 2001 – Rev. 1 1 Publication Order Number: 2N5088/D 2N5088 2N5089 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Symbol Min Max 2N5088 2N5089 300 400 900 1200 (IC = 1.0 mAdc, VCE = 5.0 Vdc) 2N5088 2N5089 350 450 — — (IC = 10 mAdc, VCE = 5.0 Vdc)(2) 2N5088 2N5089 300 400 — — Characteristic Unit ON CHARACTERISTICS DC Current Gain (IC = 100 µAdc, VCE = 5.0 Vdc) hFE — Collector–Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VCE(sat) — 0.5 Vdc Base–Emitter On Voltage (IC = 10 mAdc, VCE = 5.0 Vdc)(2) VBE(on) — 0.8 Vdc fT 50 — MHz Collector–Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Ccb — 4.0 pF Emitter–Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb — 10 pF 350 450 1400 1800 — — 3.0 2.0 SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 500 µAdc, VCE = 5.0 Vdc, f = 20 MHz) Small–Signal Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) hfe 2N5088 2N5089 Noise Figure (IC = 100 µAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) — NF 2N5088 2N5089 2. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%. RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 2 dB 2N5088 2N5089 NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25°C) NOISE VOLTAGE 30 IC = 10 mA BANDWIDTH = 1.0 Hz 20 RS ≈ 0 en , NOISE VOLTAGE (nV) 20 en , NOISE VOLTAGE (nV) 30 BANDWIDTH = 1.0 Hz 3.0 mA 10 1.0 mA 7.0 5.0 3.0 300 µA 10 20 50 100 200 RS ≈ 0 f = 10 Hz 10 100 Hz 7.0 10 kHz 3.0 0.01 0.02 500 1k 2k 5k 10k 20k 50k 100k f, FREQUENCY (Hz) Figure 2. Effects of Frequency IC = 10 mA 2.0 1.0 mA 300 µA 100 µA 0.3 0.2 0.1 16 3.0 mA 1.0 0.7 0.5 RS ≈ 0 10 20 10 µA 50 100 200 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 5.0 10 20 BANDWIDTH = 1.0 Hz 3.0 100 kHz Figure 3. Effects of Collector Current NF, NOISE FIGURE (dB) In, NOISE CURRENT (pA) 10 7.0 5.0 1.0 kHz 5.0 BANDWIDTH = 10 Hz to 15.7 kHz 12 500 µA 8.0 IC = 1.0 mA 100 µA 10 µA 4.0 30 µA 0 10 500 1k 2k 5k 10k 20k 50k 100k f, FREQUENCY (Hz) 20 Figure 4. Noise Current 50 100 200 500 1k 2k 5k 10k 20k 50k 100k RS, SOURCE RESISTANCE (OHMS) Figure 5. Wideband Noise Figure 100 Hz NOISE DATA 20 BANDWIDTH = 1.0 Hz 100 µA 100 70 50 3.0 mA 1.0 mA 30 300 µA 20 10 7.0 5.0 3.0 IC = 10 mA 30 µA 10 µA 10 20 NF, NOISE FIGURE (dB) VT, TOTAL NOISE VOLTAGE (nV) 300 200 16 IC = 10 mA 3.0 mA 1.0 mA 12 300 µA 8.0 100 µA 4.0 0 50 100 200 500 1k 2k 5k 10k 20k 50k 100k RS, SOURCE RESISTANCE (OHMS) 30 µA 10 Figure 6. Total Noise Voltage 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k RS, SOURCE RESISTANCE (OHMS) Figure 7. Noise Figure http://onsemi.com 3 10 µA BANDWIDTH = 1.0 Hz h FE, DC CURRENT GAIN (NORMALIZED) 2N5088 2N5089 4.0 3.0 VCE = 5.0 V 2.0 TA = 125°C 25°C 1.0 -55°C 0.7 0.5 0.4 0.3 0.2 0.01 0.02 0.03 0.05 0.1 1.0 0.2 0.3 0.5 IC, COLLECTOR CURRENT (mA) 2.0 3.0 5.0 10 Figure 8. DC Current Gain 1.0 -0.4 RθVBE, BASE-EMITTER TEMPERATURE COEFFICIENT (mV/ °C) TJ = 25°C V, VOLTAGE (VOLTS) 0.8 0.6 VBE @ VCE = 5.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 -0.8 -1.2 TJ = 25°C to 125°C -1.6 -2.0 -55°C to 25°C -2.4 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 100 8.0 C, CAPACITANCE (pF) 6.0 TJ = 25°C Cob 4.0 3.0 Ceb Cib Ccb 2.0 1.0 0.8 0.1 0.2 1.0 2.0 5.0 0.5 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Figure 10. Temperature Coefficients f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) Figure 9. “On” Voltages 20 50 100 Figure 11. Capacitance 500 300 200 100 VCE = 5.0 V TJ = 25°C 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 12. Current–Gain — Bandwidth Product http://onsemi.com 4 2N5088 2N5089 PACKAGE DIMENSIONS TO–92 (TO–226) CASE 29–11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K D X X G J H V C SECTION X–X 1 N N STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR http://onsemi.com 5 DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- 2N5088 2N5089 Notes http://onsemi.com 6 2N5088 2N5089 Notes http://onsemi.com 7 2N5088 2N5089 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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