SMD General Purpose Transistor (NPN) MMBT8098 SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data Case: SOT-23, Plastic Package Terminals: Weight: SOT-23 Solderable per MIL-STD-202G, Method 208 0.008 gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MMBT8098 Unit Conditions Marking Code KA VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6.0 V Collector Current 0.5 A 225 mW TA=25 ˚C 1.8 mW/° C Derate above 25 ˚C 556 ° C /W 300 mW TA=25 ˚C 2.4 mW/° C Derate above 25 ˚C Thermal Resistance, Junction to Ambient (Note 2) 417 ° C /W Junction Temperature 150 °C -55 to +150 °C IC Ptot Power Dissipation (Note 1) RθJA Thermal Resistance, Junction to Ambient (Note 1) Ptot Power Dissipation (Note 2) RθJA TJ TSTG Storage Temperature Range Note: 1. FR-5 Board=25.4 x 19.05 x 1.58 mm (1.0 x 0.75 x 0.062 inches.) 2. Alumina Substrate=10.16 x 7.62 x 0.61 mm (0.4 x 0.3 x 0.024 inches.) 99.5% alumina. TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFAX (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/AH Page 1 of 3 SMD General Purpose Transistor (NPN) MMBT8098 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Symbol hFE* Description D.C. Current Gain Min. Max. Unit Conditions 100 300 VCE=5V, IC=1mA 100 - VCE=5V, IC=10mA 75 - VCE=5V, IC=100mA V(BR)CBO Collector-Base Breakdown Voltage 60 - V IC=0.1mA, IE=0 V(BR)CEO Collector-Emitter Breakdown Voltage 60 - V IC=10mA, IB=0 V(BR)EBO Emitter-Base Breakdown Voltage 6.0 - V IE=0.01mA, IC=0 - 0.4 VCEsat* Collector-Emitter Saturation Voltage VBEon* IC=100mA, IB=5mA V IC=100mA, IB=10mA - 0.3 Base-Emitter On Voltage 0.5 0.7 V IC=1mA, VCE=5V ICES Collector Cut-off Current - 0.1 µA VCE=60V, IB=0 ICBO Base Cut-off Current - 0.1 µA VCB=60V, IE=0 IEBO Emitter Cut-off Current - 0.1 µA fT Current Gain-Bandwidth Product 150 - MHz CCBO Output Capacitance - 6 pF CEBO Input Capacitance - 25 pF VEB=6V, IC=0 VCE=5V, IC=10mA, f=100MHz VCB=5V, f=1.0MHz, IE=0 VEB=0.5V, f=1.0MHz, IC=0 *Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤2.0% Rev. A/AH www.taitroncomponents.com Page 2 of 3 SMD General Purpose Transistor (NPN) MMBT8098 Dimensions in mm SOT-23 How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: [email protected] Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. A/AH www.taitroncomponents.com Page 3 of 3