NPN High Voltage Power Transistors TIP47/48/49/50 NPN High Voltage Power Transistors Features • Application for High Voltage and Switching Circuit • RoHS Compliant TO-220 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description Collector-Base Voltage: VCBO Collector-Emitter Voltage: VCEO Value TIP47 TIP48 TIP49 TIP50 TIP47 TIP48 TIP49 TIP50 Unit 350 400 450 500 250 300 350 400 V Open Emitter V Open Base Open Collector Emitter-Base Voltage 5 V IC Collector Current (Continuous ) 1 A ICP Collector Current (Peak) 2 A IB Base Current 0.6 A PD Collector Power Dissipation 40 W 0.32 mW/° C -55 to 150 °C VEBO TJ,TSTG Operating Junction and Storage Conditions TC= 25 ºC Derate above 25 ºC Thermal Characteristics Symbol Description Value Unit Rth (j-a) Thermal Resistance from Junction to Ambient 62.5 ° C/W Rth (j-c) Thermal Resistance from Junction to Case 3.125 ° C/W TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFAX (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. B/NX 2008-03-25 Page 1 of 4 NPN High Voltage Power Transistors TIP47/48/49/50 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Symbol VCEO (SUS) ICEO ICES Description Collector- Emitter Sustaining Voltage TIP47 TIP48 TIP49 TIP50 Collector Cut-Off Current TIP47 TIP48 TIP49 TIP50 Collector Cut-Off Current TIP47 TIP48 TIP49 TIP50 Min. 250 300 350 400 -- -- Max. Unit -- V 1 1 1 1 1 1 1 1 mA mA mA Conditions IC = 30mA; IB =0 VCE = 150V, IB = 0 VCE = 200V, IB = 0 VCE = 250V, IB = 0 VCE = 300V, IB = 0 VCE = 350V, VBE = 0 VCE = 400V, VBE = 0 VCE = 450V, VBE = 0 VCE = 500V, VBE = 0 IEBO Emitter Cut-Off Current -- 1 hFE * DC Current Gain 30 10 150 VCE(sat) * Collector-Emitter Saturation Voltage -- 1 V IC = 1A; IB = 0.2A VBE(on) * Base-Emitter On Voltage -- 1.5 V VCE = 10V, IC = 1A Current Gain Bandwidth Product 10 -- MHz tON Turn ON Time -- 0.5 µs tSTG Storage Time -- 3 µs Fall Time -- 0.3 µs fT tF VEB = 5V, IC = 0 VCE = 10V, IC = 0.3A VCE = 10V, IC = 1A VCE = 10V, IC = 0.2A, f=2MHz VCC = 400V, 5 IB1 = -2.5 IB2 = IC = 6A RL= 66.7Ω * Pulse Test: Pulse Width ≤300µs, duty Cycle ≤2% Rev. B/NX 2008-03-25 www.taitroncomponents.com Rev.2A/WW Page of 4 NPN High Voltage Power Transistors TIP47/48/49/50 Package Dimensions TO-220 Rev. B/NX 2008-03-25 www.taitroncomponents.com Rev.3A/WW Page of 4 NPN High Voltage Power Transistors TIP47/48/49/50 How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: [email protected] Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. B/NX 2008-03-25 www.taitroncomponents.com Rev.4A/WW Page of 4