Power Transistors (NPN) MJE180/181/182 Power Transistors (NPN) Features • Low power audio amplifier and low current, • High speed switching applications • RoHS Compliant TO-126 Mechanical Data Case: TO-126, Plastic Package Terminals: Weight: Solderable per MIL-STD-202, Method 208 0.08 ounces, 2.24 grams Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MJE180 MJE181 MJE182 Unit VCBO Collector-Base Voltage 60 80 100 V VCEO Collector-Emitter Voltage 40 60 80 V VEBO Emitter-Base Voltage 7.0 V Collector Current Continuous 3.0 A Collector Current Peak 6.0 A Base Current 1.0 A Power Dissipation upto TC=25°C 12.5 W Power Dissipation Derate above TC=25°C 0.1 W/° C Power Dissipation upto TA=25°C 1.5 W Power Dissipation Derate above TA=25°C 0.012 W/° C RθJA Thermal Resistance from Junction to Ambient in Free Air 83.4 ° C /W RθJC Thermal Resistance from Junction to Case 10 ° C /W -65 to +150 °C IC ICM IB PD TJ, TSTG Operating Junction and Storage Temperature Range TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFAX (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/AH Page 1 of 4 Power Transistors (NPN) MJE180/181/182 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Symbol Min. Max. 50 250 VCE=1V, IC=100mA 30 - VCE=1V, IC=500mA 12 - VCE=1V, IC=1.5A MJE180 40 - V MJE181 60 - V MJE182 80 - V MJE180 60 - V MJE181 80 - V MJE182 100 - V 7.0 - V IE=1mA, IC=0 - 0.3 V IC=500mA, IB=50mA - 0.9 V IC=1.5A, IB=150mA - 1.7 V IC=3A, IB=600mA - 1.5 V IC=1.5A, IB=150mA - 2.0 V IC=3A, IB=600mA - 1.2 V IC=500mA, VCE=1V - 0.1 μA VCB=60V, IE=0 - 0.1 mA - 0.1 μA - 0.1 mA - 0.1 μA - 0.1 mA Emitter-Base Cut-off Current - 1.0 μA Co Output Capacitance - 40 pF *fT Current Gain-Bandwidth Product 50 - MHz hFE VCEO(sus) V(BR)CBO V(BR)EBO VCE(sat) Description D.C. Current Gain Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage VBE(on) Base-Emitter On Voltage Unit MJE180 ICBO Collector-Base Cut-off Current MJE181 MJE182 IEBO Conditions IC=10mA, IB=0 IC=1mA, IE=0 VCB=60V, IE=0, TC=150° C VCB=80V, IE=0 VCB=80V, IE=0, TC=150° C VCB=100V, IE=0 VCB=100V, IE=0, TC=150° C VEB=7V, IC=0 VCB=10V, IE=0, f=0.1MHz VCE=10V, IC=100mA, f=10MHz Rev. A/AH www.taitroncomponents.com Page 2 of 4 Power Transistors (NPN) MJE180/181/182 * fT = |hFE| • ftest Dimensions in mm Rev. A/AH www.taitroncomponents.com Page 3 of 4 Power Transistors (NPN) MJE180/181/182 How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: [email protected] Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. A/AH www.taitroncomponents.com Page 4 of 4