GF4410 N-Channel Enhancement-Mode MOSFET VDS 30V RDS(ON) 13.5mΩ ID 10A H C N TREENFET G ® SO-8 0.197 (5.00) 0.189 (4.80) 8 5 0.157 (3.99) 0.150 (3.81) 0.244 (6.20) 0.228 (5.79) 1 Dimensions in inches and (millimeters) 4 0.020 (0.51) 0.013 (0.33) 0.050 (1.27) 0.05 (1.27) 0.04 (1.02) 0.019 (0.48) x 45 ° 0.010 (0.25) 0.009 (0.23) 0.007 (0.18) 0.035 (0.889) 0.025 (0.635) 0.069 (1.75) 0.053 (1.35) 0.009 (0.23) 0.004 (0.10) 0.165 (4.19) 0.155 (3.94) 0.245 (6.22) Min. Mounting Pad Layout 0.050(1.27) 0.016 (0.41) 0 °– 8 ° 0.050 typ. (1.27) Mechanical Data Features Case: SO-8 molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Mounting Position: Any Weight: 0.5g • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Low Voltage DC/DC Converters • Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Symbol Drain-Source Voltage A = 25°C unless otherwise noted) Limit Unit VDS 30 VGS ± 20 ID 10 8 IDM 50 Continuous Source Current (Diode Conduction)(1) IS 2.3 TA = 25°C TA = 70°C PD 2.5 1.6 W TJ, Tstg –55 to 150 °C RθJA 50 °C/W Gate-Source Voltage Continuous Drain Current TJ = 150°C(1) TA = 25°C TA = 70°C Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range (1) Maximum Junction-to-Ambient Thermal Resistance Notes: (1) Surface Mounted on FR4 Board, t ≤ 10 sec. V A 7/10/01 GF4410 N-Channel Enhancement-Mode MOSFET Electrical Characteristics (T J Parameter = 25°C unless otherwise noted) Symbol Test Condition Min Typ Max Unit VGS(th) VDS = VGS, ID = 250µA 1.0 Gate-Body Leakage IGSS VDS = 0V, VGS = ± 20V – – V – – ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30V, VGS = 0V – – 1 VDS=30V, VGS=0V, TJ=55°C – – 25 VDS ≥ 5V, VGS = 10V 20 – – VGS = 10V, ID = 10A – 8 13.5 VGS = 4.5V, ID = 5A – 12 20 VDS = 15V, ID = 10A – 38 – VDS = 15V, ID = 10A, VGS = 5V – 23 32 – 42 60 – 5 – – 8 – – 9 15 – 12 20 – 70 100 – 35 80 Static Gate Threshold Voltage On-State Drain Current(1) ID(on) Drain-Source On-State Resistance(1) RDS(on) Forward Transconductance(1) gfs µA A mΩ S Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time VDS = 15V, VGS = 10V ID = 10A VDD = 25V, RL = 25Ω tr Turn-Off Delay Time ID ≈ 1A, VGEN = 10V td(off) Fall Time RG = 6Ω tf nC ns Input Capacitance Ciss VGS = 0V – 2100 – Output Capacitance Coss VDS = 25V – 320 – Reverse Transfer Capacitance Crss f = 1.0MHZ – 190 – VSD IS = 2.3A, VGS = 0V – 0.75 1.1 V trr IF = 2.3A, di/dt = 100A/µs – 55 80 ns pF Source-Drain Diode Diode Forward Voltage(1) Source-Drain Reverse Recovery Time Note: (1) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2% VDD ton Switching Test Circuit RD VIN VOUT D Switching Waveforms td(on) RG tr td(off) tf 90 % 90% Output, VOUT VGEN toff 10% 10% INVERTED DUT G 90% 50% S Input, VIN 50% 10% PULSE WIDTH GF4410 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 2 – Transfer Characteristics Fig. 1 – Output Characteristics 50 VGS=10V 6.0 V 40 5.0 V 4.5V VDS = 10V 3.5V 40 4.0V ID -- Drain Current (A) ID -- Drain Source Current (A) 50 30 3.0V 20 30 TJ = 125°C 20 --55°C 10 10 25°C 2.5V 0 0 0 0.5 1 1.5 2 2.5 3 1 2 3 4 5 VDS -- Drain-to-Source Voltage (V) VGS -- Gate-to-Source Voltage (V) Fig. 3 – Threshold Voltage vs. Temperature Fig. 4 – On-Resistance vs. Drain Current 1.8 0.02 1.6 RDS(ON) -- On-Resistance (Ω) VGS(th) -- Threshold Voltage (V) ID = 250µA 1.4 1.2 1 0.8 0.6 --50 0 25 50 75 100 125 150 0.008 VGS = 10V 0.004 1.6 VGS = 10V ID = 10A 1.4 1.2 1 0.8 --25 0 25 50 75 100 TJ -- Junction Temperature (°C) 0 10 20 30 ID -- Drain Current (A) Fig. 5 – On-Resistance vs. Junction Temperature RDS(ON) -- On-Resistance (Normalized) VGS = 4.5V 0.012 0 --25 TJ -- Junction Temperature (°C) 0.6 --50 0.016 125 150 40 50 GF4410 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 6 – On-Resistance vs. Gate-to-Source Voltage Fig. 7 – Gate Charge 10 0.035 VDS = 15V ID = 10A ID = 10A VGS -- Gate-to-Source Voltage (V) RDS(ON) -- On-Resistance (Ω) 0.03 0.025 0.02 0.015 TJ = 125°C 0.01 25°C 0.005 6 4 2 0 0 2 4 6 8 10 0 10 20 30 40 VGS -- Gate-to-Source Voltage (V) Qg -- Gate Charge (nC) Fig. 8 – Capacitance Fig. 9 – Source-Drain Diode Forward Voltage 30 45 100 3000 VGS = 0V f = 1MHz VGS = 0V 2500 Ciss IS -- Source Current (A) C -- Capacitance (pF) 8 2000 1500 1000 10 TJ = 125°C 1 25°C --55°C 0.1 Coss 500 Crss 0 0 5 10 15 20 VDS -- Drain-to-Source Voltage (V) 25 0.01 0 0.2 0.4 0.6 0.8 VSD -- Source-to-Drain Voltage (V) 1 1.2 GF4410 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 10 – Breakdown Voltage vs. Junction Temperature Fig. 11 – Transient Thermal Impedance 43 41 40 39 38 37 --50 --25 0 25 50 75 100 120 150 TJ -- Junction Temperature (°C) Fig. 12 – Power vs. Pulse Duration Fig. 13 – Maximum Safe Operating Area 100 70 10 0µ 1m 60 ID -- Drain Current (A) BVDSS -- Breakdown Voltafge (V) ID = 250µA 42 50 40 30 20 10 ms 0m 1s RDS(ON) Limit s 1 10s 0.1 10 0 10 10 s s DC VGS = 10V Single Pulse on 1-in2 2oz Cu. TA = 25°C 0.01 0.01 0.1 1 10 100 0.1 1 10 VDS -- Drain-Source Voltage (V) 100