BLM3401 BLM3401 P-Channel Enhancement Mode MOSFET FEATURES APPLICATIONS VDS －30V VGS 12V RDSon TYP 51mR@-10V 60mR@-4V5 98mR@-2V5 ID －4A DESCRIPTION • • • Load Switch Portable Devices DCDC conversion Pin Configuration This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package Excellent thermal and electrical capabilities. Packaging Information Page 1 V1.0 P-Channel Enhancement Mode MOSFET BLM3401 Absolute Maximum Ratings @TA=25℃ ℃ unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Pulsed Continuous Power Dissipation Operating and Storage Temperature Range Drain Current (Note 1) Symbol Vdss Vgss Id Idm Pd Tj,Tstg Limit -30 ±12 -4 -30 800 -55~150 Unit V V A A mW ℃ Electrical Characteristics @TA=25℃ ℃ unless otherwise noted Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Idss Vgs=0V, Vds =-30 V ---1 uA Gate - Body Leakage, Forward Igssf Vgs =-12V ---100 nA Gate–Body Leakage, Reverse Igssr Vgs=12V --100 nA ON CHARACTERISTICS Gate Threshold Voltage Vgs(th ) Vds=Vgs,Id=-250µA -0.7 -1 -1.3 V Vgs=-10V,Id=-4.2A -51 55 Static Drain-Source On-Resistance Vgs=-4.5V,Id=-4A -60 65 mR Rds(on) Vgs=-2.5V,Id=-1A -98 120 DYNAMIC CHARACTERISTICS Input Capacitance Ciss -600 -Vds=-30V,Vgs=0V pF Output Capacitance Coss -85 -f =200KHz Reverse Transfer Capacitance Crss -66 -SWITCHING CHARACTERISTICS Turn-On Delay Time Td(on) -6.5 -Rise Time Tr 3.5 -Vds=-15V,Rl=3.6R, -ns Vgs=-10V,Rgen=6R Turn-Off Delay Time Td(off) -40 -Fall Time Tf -13 -DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage Vsd Is=-1A,Vgs=0V -- -0.78 -1 V Notes : 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Page 2 V1.0 P-Channel Enhancement Mode MOSFET BLM3401 P-channel Typical Performance Characteristics Page 3 Vds, Drain-Source Voltage (V) Figure 1. Output Characteristics Vgs, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics Id, Drain Current (A) Fig3. On Resistance vs. Drain Current VDS, Drain-Source Voltage (V) Fig4.Capacitance Tj, Junction Temperature (℃) Fig5. On resistance vs. Temperature VDS, Drain-Source Voltage (V) Fig6.Diode Forward Characteristics V1.0 P-Channel Enhancement Mode MOSFET Vgs, Gate-to-Source Voltage (V) Fig7. On Resistance vs. G-S Voltage Page 4 BLM3401 Tj, Junction Temperature (℃) Fig8. Gate Threshold vs.Temperature V1.0