900V/9A Power MOSFET (N-Channel) MSU9N90P 900V/9A Power MOSFET (N-Channel) General Description • MSU9N90P is a N-Channel enhancement mode power MOSFET with advanced technology. It is designed to have better characteristics, such as fast switching time, low gate charge, minimized on-state resistance. This device is well suited for use as a load switch or in PWM applications. • MSU9N90P is available in TO-3P package. TO-3P Features • • • • • • • RDS(ON) =1.4Ω@VGS=10V Ultra low gate charge (Typ. 45nC) Low Crss (Typ. 14pF) Fast switching capability Avalanche energy specified Improved dv/dt capability, high ruggedness RoHS compliance and halogen free Application • • • • DC to DC Converter Active Power Factor Correction SMPS Application. Electronic Lamp Ballast TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFAX (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/JH Page 1 of 11 900V/9A Power MOSFET (N-Channel) MSU9N90P Ordering Information MS U 9 N 90 P - xx - TU Packing Code TU: Tube, RoHS UG: Tube, Halogen Free Factory Location Code Outline Code P: TO-3P Voltage Code 90: 900V Channel Code N: N-channel Ampere Code 9: 9A Technology Code Taitron Power MOSFET (Standard) Pin Configuration and Symbol 1: GATE 2: DRAIN 3: SOURCE Rev. A/JH www.taitroncomponents.com Page 2 of 11 900V/9A Power MOSFET (N-Channel) MSU9N90P Absolute Maximum Ratings (TC=25ºC unless otherwise specified) Symbol Description Ratings Unit VDSS Drain-Source Voltage 900 V VGSS Gate-Source Voltage ± 30 V Drain Current -Continuous 9.0 A Drain Current -Pulsed (note3) 36 A ID IDM EAS EAR IAR dv/dt PD Avalanche Energy Single Pulsed (Note4) 900 Repetitive (Note3) 28 mJ Avalanche Current (note3) 9.0 A Peak Diode Recovery dv/dt (note5) 4.0 V/ns Power Dissipation @ TC=25ºC 160 W 1.28 W/°C Derating above 25ºC TJ Junction Temperature +150 °C TSTG Storage Temperature -55 to +150 °C Note: 1. 2. 3. 4. 5. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not limited. Repetitive rating: pulse width limited by maximum junction temperature. L=21mH, IAS=9.0A, VDD=50V, RG=25Ω, starting TJ=25°C. ISD≤9.0A, di/dt≤200A/us, VDD≤BVDSS, starting TJ=25°C. Thermal Characteristics Symbol Description RθJA Thermal Resistance(Junction-to-Ambient) RθJC Thermal Resistance(Junction-to-Case) Ratings Unit 50 °C/W 0.78 °C/W Rev. A/JH www.taitroncomponents.com Page 3 of 11 900V/9A Power MOSFET (N-Channel) MSU9N90P Electrical Characteristics (TC=25ºC unless otherwise specified) OFF Characteristics Symbol Description Conditions Min. Typ. Max. Unit V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250µA 900 - - V ∆V(BR)DSS /∆TJ Breakdown Voltage Temperature Coefficient ID=250uA, referenced to 25°C - 0.99 - V/°C Drain-Source leakage Current Gate-Source Forward Leakage Reverse Current VDS=900V, VGS=0V - - 10 μA VGS=30V, VDS=0V - - 100 nA VGS=-30V, VDS=0V - - -100 nA Conditions Min. Typ. Max. Unit VGS=10.0V, ID=4.5A - 1.12 1.4 Ω VDS=VGS, ID=250uA 3.0 - 5.0 V Conditions Min. Typ. Max. Unit - 2100 2730 pF - 175 230 pF - 14 18 pF Min. Typ. Max. Unit - 50 110 ns - 120 250 ns - 100 210 ns - 75 160 ns - 45 58 nC - 13 - nC - 18 - nC IDSS IGSS ON Characteristics Symbol RDS(ON) VGS(th) Description Static Drain-Source On-State Resistance Gate-Source Threshold Voltage Dynamic Characteristics Symbol Description CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance VDS=25V, VGS=0V, f=1.0MHz Switching Characteristics Symbol tD(on) Description Conditions Turn-On Delay Time tR Turn-On Rise Time tD(off) Turn-Off Delay Time tF Turn-Off Fall Time QG Total Gate Charge QGS Gate-Source Charge QGD Gate-Drain Charge VDD=450V, ID=11A RG=25Ω (Note 1, 2) VDS=720V, ID=11A VGS=10V (Note 1, 2) Rev. A/JH www.taitroncomponents.com Page 4 of 11 900V/9A Power MOSFET (N-Channel) MSU9N90P Drain-Source Diode Characteristics and Maximum Ratings Symbol Description tRR Drain-Source Diode Forward Voltage Maximum Continuous DrainSource Diode Forward Current Maximum Pulse Drain-Source Diode Forward Current Reverse Recovery Time QRR Reverse Recovery Charge VSD IS ISM Conditions Min. Typ. Max. Unit VG =0V, Is=9A - - 1.4 V - - - 9 A - - - 36 A VGS=0V, Is=9A DIF/dt=100A/us (Note1) - 550 - ns - 6.5 - uC Note 1. Pulse test: pulse width ≤300us, duty cycle≤2%. 2. Essentially independent of operating temperature. Typical Characteristics Curves Fig.2- Drain-Source On-State Resistance Characteristics Drain Current ID(A) Drain Current ID (mA) Fig.1- Drain Current vs. Source-Drain Voltage Source-Drain Voltage VSD (V) Drain-Source Voltage VDS (mV) Rev. A/JH www.taitroncomponents.com Page 5 of 11 900V/9A Power MOSFET (N-Channel) MSU9N90P Fig.3- Drain Current vs. Gate Threshold Voltage Drain Current ID (uA) Drain Current ID (uA) Fig.4- Drain Current vs. Drain-Source Breakdown Voltage Gate Threshold Voltage VTH (V) Drain-Source Breakdown Voltage BVDSS (V) Test Circuit Fig.5- Switching Test Circuit Fig.6- Switching Waveform Rev. A/JH www.taitroncomponents.com Page 6 of 11 900V/9A Power MOSFET (N-Channel) MSU9N90P Fig.7- Gate Charge Test Circuit Fig.9- Unclamped Inductive Switching Test Circuit Fig.8- Gate Charge Waveform Fig.10- Unclamped Inductive Switching Waveform Rev. A/JH www.taitroncomponents.com Page 7 of 11 900V/9A Power MOSFET (N-Channel) MSU9N90P Fig.11- Peak Diode Recovery dv/dt Test Circuit Rev. A/JH www.taitroncomponents.com Page 8 of 11 900V/9A Power MOSFET (N-Channel) MSU9N90P Fig.12- Peak Diode Recovery dv/dt Test Waveform Rev. A/JH www.taitroncomponents.com Page 9 of 11 900V/9A Power MOSFET (N-Channel) MSU9N90P Dimensions in inch(mm) TO-3P Rev. A/JH www.taitroncomponents.com Page 10 of 11 900V/9A Power MOSFET (N-Channel) MSU9N90P How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: [email protected] Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. A/JH www.taitroncomponents.com Page 11 of 11