-30V/-7.1A Dual P-Channel Trench MOSFET MSK7D1PD03S8 -30V/-7.1A Dual P-Channel Trench MOSFET General Description • • • • Fast Switching Time Low On Resistance, Low Gate Charge Excellent Avalanche Characteristics Suitable for portable equipment and Load Switch Features SOP-8 • VDSS=-30V, ID=-7.1A • Drain-Source ON Resistance: RDS(ON) ≤25 mΩ @ VGS=-10V RDS(ON) ≤41 mΩ @ VGS=-4.5V • RoHS Compliant Pin Configuration (top view) TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFAX (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/CZ Page 1 of 8 -30V/-7.1A Dual P-Channel Trench MOSFET MSK7D1PD03S8 Absolute Maximum Ratings (TA=25ºC unless otherwise specified, Note) Symbol Description P-Channel Unit VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ± 20 V TA=25 ºC -7.1 TA=70 ºC -5.7 ID* Drain Current Continuous IDP Drain Current –Pulsed PD* Power Dissipation RθJA* TJ TSTG A -40 TA=25 ºC 1.1 TA=70 ºC 0.7 Thermal Resistance (Junction-to-Ambient) W 110 °C/ W +150 °C -55 to +150 °C Junction Temperature Storage Temperature Range A Note: 1. * Surface mounted on FR4 board, t ≤10 seconds. Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Off Characteristics Symbol Description V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Min. Typ. Max. Unit Conditions -30 - - V VGS=0V, IDS=-10µA - - -1 VDS=-30V, VGS=0V uA VDS=-30V, VGS=0V, Tj=55 °C - - -25 - - ±100 nA VGS=±20V, VDS=0V Min. Typ. Max. Unit Conditions -1 - -3 - 20 25 - 33 41 - 20 - On Characteristics Symbol Description VGS(th)* Gate Threshold Voltage RDS(ON)* Drain-Source ON Resistance gFS* Forward Transconductance VDS=VGS, ID=-250μA mΩ S VGS=-10V, ID=-7.1A VGS=-4.5V, ID=-5.5A VDS=-10V, ID=-7.1A Rev. A/CZ www.taitroncomponents.com Page 2 of 8 -30V/-7.1A Dual P-Channel Trench MOSFET MSK7D1PD03S8 Dynamic Characteristics Symbol Description Min. Typ. Max. Ciss Input Capacitance - 1550 - Coss Output Capacitance - 420 - Crss Reverse Transfer Capacitance - 380 - Min. Typ. Max. Unit pF Conditions VDS=-15V, VGS=0V, f=1MHz Switching Characteristics Symbol Description tD(on) * Turn-On Delay Time - 9 15 tr * Turn-On Rise Time - 12 20 tD(off)* Turn-Off Delay Time - 60 90 tf* Turn-Off Fall Time - 34 50 Qg* Total Gate Charge - 33 50 Qgs* Gate-Source Charge - 5.4 - Qgd* Gate-Drain Charge - 8.9 - Unit Conditions ns VDS=-15V, RL=6Ω, ID=-1A, VGS=-10V nC VDS=-15V, ID=-7.1A VGS=-10V Drain-Source Diode Characteristics and Maximum Ratings Symbol Is Vsd* Description Min. Typ. Max. Unit Conditions Source-Drain Diode Current - - -1.7 A - Source-Drain Diode Forward Voltage - -0.8 -1.2 V IS=-1.7A, VGS=0V Note: 2. * Pulse test: Pulse width ≤300us, Duty cycle≤2%； Rev. A/CZ www.taitroncomponents.com Page 3 of 8 -30V/-7.1A Dual P-Channel Trench MOSFET MSK7D1PD03S8 Typical Characteristics Curves Fig.2- ID vs. VGS Drain Current ID (A) Drain Current ID (A) Fig.1- ID vs. VDS Gate-Source Voltage VGS (V) Fig.3- Vth vs. TJ Fig.4- IS vs. VSD Reverse Drain Current IS (A) Normalized Threshold Voltage Vth (V) Drain-Source Voltage VDS (V) Junction Temperature TJ (°C) Source-Drain Voltage VSD (V) Rev. A/CZ www.taitroncomponents.com Page 4 of 8 -30V/-7.1A Dual P-Channel Trench MOSFET MSK7D1PD03S8 Fig.6- RDS(ON) vs. ID Normalized ON Resistance RDS(ON) (mΩ) Normalized ON Resistance RDS(ON) (mΩ) Fig.5- RDS(ON) vs. TJ Junction Temperature TJ (°C) Drain Current ID (A) Drain Current ID (A) Fig.7- Safe Operation Area Drain-Source Voltage VDS (V) Rev. A/CZ www.taitroncomponents.com Page 5 of 8 -30V/-7.1A Dual P-Channel Trench MOSFET MSK7D1PD03S8 Normalized Transient Thermal Resistance Fig.8- Transient Thermal Response Curve Square Wave pulse Duration t (S) Test Circuit and Waveform Fig.9-Gate Charge Rev. A/CZ www.taitroncomponents.com Page 6 of 8 -30V/-7.1A Dual P-Channel Trench MOSFET MSK7D1PD03S8 Fig.10-Resistive Load Switching Dimensions in mm SOP-8 Rev. A/CZ www.taitroncomponents.com Page 7 of 8 -30V/-7.1A Dual P-Channel Trench MOSFET MSK7D1PD03S8 How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: [email protected] Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. A/CZ www.taitroncomponents.com Page 8 of 8