SMG2305L

WILLAS
FM120-M+
SMG2305LTHRU
FM1200-M+
P-Channel
Enhancement Mode Power Mos.FET
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Description
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
The SMG2305L
provide the designer with the best
• Low power loss, high efficiency.
combination of fast switching, low on-resistance
• High current capability, low forward voltage drop.
and cost-effectiveness.
• High surge capability.
S
The SMG2305L
is universally
preferred
for all commercial
for overvoltage
protection.
• Guardring
high-speed
switching.
• Ultra
industrial
surface
mount application
and suited for low
Silicon epitaxial
chip, converters.
metal silicon junction.
voltage•applications
suchplanar
as DC/DC
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Features
Halogen free product for packing code suffix "H"
data
* SuperMechanical
high dense cell design
for extremely low RDS(ON)
Dim
L
2
0.146(3.7)
0.130(3.3)
3
Top View
B
G
1.40
1.60
C
1.00
1.30
0.071(1.8)
0.056(1.4)
0.35
0.50
G
1.70
2.10
H
0.00
0.10
J
0.10
0.26
K
0.20
0.60
0.85
1.15
2.40
2.80
J
C
K
0.040(1.0)
0.024(0.6)
L
Drain
• Case : Molded plastic, SOD-123H
Gate
,
Applications
• Terminals :Plated terminals, solderable per MIL-STD-750
S
0.031(0.8) Typ.
Max
B
D
D
Min
2.70 Typ.3.10
0.012(0.3)
A
1
H
: UL94-V0 rated flame retardant
• Epoxy
* Reliable
and rugged
SC-59
A
0.031(0.8) Typ.
All Dimension in mm
D
Source
Method 2026
* Power Management
in Notebook Computer
• Polarity
: Indicated by cathode band
* Protable
Equipment
Dimensions in inches and (millimeters)
• Mounting
* Battery
PoweredPosition
System: Any
• Weight : Approximated 0.011 gram
G
Marking : 2305MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Marking Code
RATINGS
Parameter
FM140-MH FM150-MH FM160-MH
FM180-MH FM1100-MH FM1150-MH
SYMBOL FM120-MH FM130-MH
Symbol
Ratings
Unit FM1200-MH UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30 VDS
14
40
15
50
16
60 -20
18
80
10
100
115
V
150
120
200
Volts
Gate-Source
Voltage
Maximum
RMS Voltage
VRMS
14
21 VGS
28
35
42 ±12
56
70
105
V
140
Volts
Maximum DC Blocking Voltage3
VDC
20
50
60
80
100
Volts
IO
IFSM
150
A
200
Maximum Average Forward Rectified
Current
3
30
o40
ID@TA=25 C
Drain-Source Voltage
Continuous Drain Current
S
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
Absolute
Maximum
Ratings
For
capacitive load,
derate current
by 20%
Continuous Drain Current
Peak Forward Surge Current 8.3 ms single half sine-wave
Pulsed Drain Current
superimposed on rated load (JEDEC method)
TotalThermal
Power Dissipation
Typical
Resistance (Note 2)
RΘJA
CJ
Typical Junction Capacitance (Note 1)
Linear Derating Factor
TJ
Operating
JunctionRange
and Storage Temperature Range
Storage
Temperature
TSTG
Operating Temperature Range
ID@TA=70 oC
IDM
A=25 oC
PD@T
-55 to +125
Tj, Tstg
-4.2
1.0
-3.4
30
-10
1.38
40
120
0.01
- -55~+150
65 to +175
Amps
A
-55 to +150
A
Amps
W
℃/W
PF
o
W/ C
℃
o
C
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Thermal Data
Rated DC Blocking Voltage
NOTES:
@T A=125℃
Parameter
0.70
0.85
0.9
0.5
IR
0.92
Rthj-a
mAmp
Ratings
90
Volts
10
Symbol
3
Thermal at
Resistance
1- Measured
1 MHZ and Junction-ambient
applied reverse voltage of 4.0 VDC.
0.50
Unit
o
C /W
2- Thermal Resistance From Junction to Ambient
2012-06
2013-01
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
SMG2305LTHRU
FM1200-M+
P-Channel Enhancement Mode Power Mos.FET
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
o
offers
• Batch process design, excellent power dissipation
Electrical
Characteristics(
Tj=25
C resistance.
Unless
otherwise specified) SOD-123H
better reverse
leakage current and
thermal
• Low profile surface mounted application in order to
Parameter
Symbol
optimize
board space.
• Low power loss, high efficiency.
capability,
low forward voltage
• High current
BVdrop.
DSS
Drain-Source
Breakdown
Voltage
• High surge capability.
for Temp.
overvoltage
protection. BVDS/ Tj
• Guardring
Breakdown
Voltage
Coefficient
• Ultra high-speed switching.
Silicon epitaxial
GS(th)
Gate •Threshold
Voltageplanar chip, metal siliconVjunction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Gate-Source
Leakage Current
• RoHS product for packing code suffix "G"
IGSS
o
Halogen free product for packing code
suffix "H"
Drain-Source Leakage Current (Tj=25 C)
Mechanical data
Min.
Typ.
_
_
-0.1
_
-20
_
Max.
Unit
0.146(3.7)
0.130(3.3)
V
V/
o
0.071(1.8)
0.056(1.4)
-0.5
_
_
V
VDS=VGS, ID=-250uA
_
_
±100
nA
VGS=± 12V
_
_
-1
uA
VDS=-20V,VGS=0
_
_
-10
uA
0.024(0.6)
VDS=-16V,V
GS=0
0.040(1.0)
30
35
VGS=-4.5V, ID=-4.0A
_
36
42
VGS=-2.5V, ID=-4.0A
Method 2026
RDS(ON)
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.031(0.8) Typ.
_
46
_
60
0.031(0.8) Typ.
Ω
Dimensions inminches
and (millimeters)
55
VGS=-1.8V, ID=-2A
VGS=-1.5V, ID=-1A
2
_
_
MAXIMUM
RATINGS AND ELECTRICAL
CHARACTERISTICS
Qg
Total Gate Charge
10.6
Ratings at 25℃ ambient temperature unless otherwise specified.
Gate-Source
Qgs
Single
phase halfCharge
wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Gate-Drain ("Miller") Charge
Qgd
RATINGS
_
2.32
_
_
3.68
_
_ 13
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
14
5.9
Rise Time
Maximum
RMS Voltage
Tr
VRMS
14
_
15 _
50
21
3.6
28
35
Maximum DC Blocking Voltage
VDC
20
Time2
Turn-off Delay Time
Maximum Average Forward Rectified Current
FallForward
Time Surge Current 8.3 ms single half sine-wave
Peak
superimposed on rated load (JEDEC method)
InputThermal
Capacitance
Typical
Resistance (Note 2)
Coss
TJ
Operating Temperature Range
Storage Temperature Range
TSTG
Crss
Reverse Transfer Capacitance
CHARACTERISTICS
Forward Transconductance
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
NOTES:
Parameter
IO
T
IFSMf
CJ
Output Capacitance
Source-Drain Diode
Td(Off)
RCiss
ΘJA
Typical Junction Capacitance (Note 1)
Rated DC Blocking Voltage
nC
ID=-4.2A
VDS=-16V
VGS=-4.5V
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Td(ON)
Marking
Code
Turn-on
Delay
@T A=125℃
_
30
30
_
_
40
40
32.4
2.6
740
_
-55 to +125167
_
126
16
60
18
10
VDS=-15V
80
100
ID=-4.2A
42
56
70
VGS=-10V
nS
60
80
100
RG=6Ω
1.0
RD=3.6 Ω
30
_
50 _
_
_
_
40
120
pF
- 65 to +175
_
115
150
120
200
Volts
105
140
Volts
150
200
Volts
Amps
Amps
℃/W
VGS=0V
VDS=-15V
-55 to +150
f=1.0MHz
PF
℃
℃
_ FM160-MHSFM180-MH
_
FM140-MH FM150-MH
FM1100-MH
FM1150-MH FM1200-MH UNIT
SYMBOL
VDS
=-5V, ID=-2.8A
Gfs FM120-MH FM130-MH
9
VF
0.50
0.70
Symbol
2- Thermal Resistance From Junction to Ambient
0.85
0.9
0.5
IR
2
1- Forward
Measured atOn
1 MHZ
and applied
reverse voltage of 4.0 VDC. VSD
Voltage
o
Reference to 25 C ,ID=-1mA
• Case : Molded plastic, SOD-123H
_
,
• Terminals :Plated terminals, solderable per MIL-STD-750
2
Static•Drain-Source
On-Resistance
Polarity : Indicated
by cathode band
0.012(0.3) Typ.
VGS=0V, ID=-250uA
IDSS
Drain-Source
(Tj=70
C)
UL94-V0 Current
rated flame
retardant
• Epoxy :Leakage
Test Condition
Min.
Typ.
Max.
_
_
-1.2
10
mAmp
Test Condition
V
IS=-1.2A, VGS=0V.
Is=-4.2A,VGS=0V
dl/dt=100A/uS
Trr
_
27.7
_
nS
Reverse Recovery Charge
Qrr
_
22
_
nC
Volts
Unit
Reverse Recovery Time
0.92
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width≦300us, dutycycle≦2%.
3.Surface mounted on 1 inch2 copper pad of FR4 board; 270°C/W when mounted on min. copper pad.
2012-06
2013-01
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
SMG2305LTHRU
FM1200-M+
P-Channel Enhancement Mode Power Mos.FET
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features Curve
Characteristics
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Volts
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Volts
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
Storage Temperature Range
1.0
30
40
120
-55 to +125
Amp
Amp
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.5
0.9
0.92
Volts
10
mAm
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2013-01
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
SMG2305LTHRU
FM1200-M+
P-Channel Enhancement Mode Power Mos.FET
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Volts
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Volts
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
Storage Temperature Range
1.0
30
40
120
-55 to +125
Amps
Amps
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.5
0.9
0.92
Volts
10
mAmp
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2013-01
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
P-Channel Enhancement Mode Power
Mos.FET
SMG2305L
Ordering Information: Device PN SMG2305L‐T(1)G(2)‐WS Packing Tape&Reel: 3 Kpcs/Reel Note: (1) Packing code, Tape & Reel (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2013-01
WILLAS ELECTRONIC CORP.