WILLAS FM120-M+ THRU M7002NND03 FM1200-M+ WBFBP-03B Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage) current and thermal resistance. MOSFET( N-Channel • Low profile surface mounted application in order to optimize board space. DESCRIPTION • Low power loss, high efficiency. D SOD-123H WBFBP-03B TOP (1.2×1.2×0.5) 0.146(3.7) unit: mm 0.130(3.3) High cell current density, DMOS technology. These drop. products have been designed to capability, low forward voltage • High 0.012(0.3) Typ. capability. • High surge minimize on-state resistance while provide rugged, reliable, and fast switching G • Guardring for overvoltage protection. performance. They can be used in most applications requiring up to 400mA DC switching. • Ultra high-speed epitaxial planar chip, metal junction. and• Silicon can deliver pulsed currents up to silicon 2A. These products are particularly suited • Lead-free parts meet environmental standards of S 0.071(1.8) 0.056(1.4) D 1. GATE BACK 2. SOURCE for low voltage, low current applications such as small servo motor control, power MIL-STD-19500 /228 3. DRAIN product for packing code suffix "G" applications. • RoHS gate MOSFET drivers, and other switching Halogen free product for packing code suffix "H" S Mechanical data FEATURES • Epoxy : UL94-V0 rated flame retardant High density cell design for low RDS(ON) • Case : Molded plastic, SOD-123H , Voltage controlled small signal switch • Terminals :Plated terminals, solderable per MIL-STD-750 G 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Rugged and reliable Method 2026 • Polarity : Indicated cathode band High saturation current by capability Dimensions in inches and (millimeters) • Mounting Position : Any • Weight : Approximated 0.011 gram APPLICATION N-ChannelMAXIMUM Enhancement Mode Field Effect Transistor CHARACTERISTICS RATINGS AND ELECTRICAL For at portable equipment:(i.e. Mobile MD,CD-ROM, DVD-ROM, Note book PC, etc.) Ratings 25℃ ambient temperature unlessphone,MP3, otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. Pb-Freeload, package is available For capacitive derate current by 20% MARKING: 72 RoHS product for packing code suffix ”G”FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH SYMBOL FM1200-MH UNIT RATINGS D 115 Marking Code 12 13 14 15 16 18 10 120 Halogen free product for packing code suffix “H” VRRM 20 30 40 50 60 80 100 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 Maximum Average Forward Rectified Current IO IFSM Maximum Recurrent Peak Reverse Voltage Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on ratedRATINGS load (JEDEC method) MAXIMUM (Ta=25℃ Typical Thermal Resistance (Note 2) Symbol CJ Operating Temperature Range TJ Drain-Source Voltage VDS 1.0 30 unless otherwise noted ) RΘJA Typical Junction Capacitance (Note 1) Parameter -55 to +125 ID PD Power Dissipation Maximum Forward Voltage at 1.0A DC RθJA Volts 140 Volts 200 Volts Amps Amps 40 Value 120 60 -55 to +150 ℃/W Units PF V ±20 - 65 to +175 Maximum Drain Current - Pulsed CHARACTERISTICS 150 S 200 VGSS Continuous Storage Temperature Range Gate-Source Voltage -TSTG G 150 72 105 ℃ V 115 ℃ mA SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF 0.50 Thermal Resistance from Junction to Ambient 150 0.70 Maximum Average Reverse Current at @T A=25℃ 0.5 J Rated DC Blocking Voltage 10 T Junction Temperature IR Tstg Storage Temperature @T A=125℃ NOTES: 0.85 833 150 -55~+150 mW 0.9 ℃/W ℃ 0.92 Volts mAmps ℃ 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU M7002NND03 FM1200-M+ WBFBP-03B Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H ELECTRICAL (Tain =25 ℃ unless otherwise specified) surface mounted application order to • Low profileCHARACTERISTICS optimize board space. Parameter Symbol • Low power loss, high efficiency. V(BR)DSS Drain-Source Breakdown Voltage capability, low forward voltage drop. • High current Vth(GS) Gate-Threshold Voltage* • High surge capability. for overvoltage protection.lGSS • Guardring Gate-body Leakage • Ultra high-speed switching. epitaxialDrain planarCurrent chip, metal silicon • Silicon IDSS junction. Zero Gate Voltage • Lead-free parts meet environmental standards of MIL-STD-19500 /228 On-state Drain Current* ID(ON) • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" RDS(on) Drain-Source On-Resistance* Mechanical data rated flame retardant • Epoxy : UL94-V0 VDS(on) Drain-Source On- Voltage * Test conditions Min0.146(3.7) VGS=0V,ID=10μA 60 0.012(0.3) Typ. 1 2.5 VDS=0V, VGS=±25V ±80 0.071(1.8) 0.056(1.4) VDS=60V, VGS=0V 0.08 500 VDS=60V,VGS=0V,Tj=125℃ VGS=10V, VDS=7V 500 1 7.5 VGS=5V, ID=50mA 1 7.5 VGS=10V, ID=500mA 0.040(1.0) 0.024(0.6) 0.5 Input Capacitance • Polarity : Indicated by cathode band Ciss 3.75 0.05 Coss Reverse Transfer Capacitance • Weight : Approximated 0.011 gram Crss V nA μA 0.375 Ω V 0.031(0.8) Typ. 80 500 ms 0.55 1.2 V 50 Dimensions in inches and (millimeters) Output Capacitance Position : Any • Mounting Unit mA VGS=10V, ID=500mA IS=115mA, VGS=0V VSD Max VDS=VGS, ID=250μA VGS=5V, ID=50mA • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. , VDS=10V, ID=200mA g Forward Tran conductance* • Terminals :Plated terminals, solderablefs per MIL-STD-750 Diode ForwardMethod Voltage 2026 Typ 0.130(3.3) VDS=25V, VGS=0V,f=1MHz 25 pF 5 *Pulse test : pulse width≤300μs, duty cycle≤2%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS SWITCHING TIME Ratings at 25℃ ambient temperature unless otherwise specified. td(on) VDD=25V,RG=25Ω Turn-on Time Single phase half wave, 60Hz, resistive of inductive load. ID=500mA,VGEN=10V For capacitive load, derate current by 20% Turn-off Time 20 td(off) RATINGS ns 40 RL=50Ω FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volts Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 1.0 30 40 120 -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 10 0.9 0.92 Volts mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 WILLAS ELECTRONIC CORP. 2012-0 WILLAS ELECTRONIC CORP.