WILLAS FM120-M+ THRU SCS520G FM1200-M+ 100mA Surface Mount Schottky Barrier Rectifiers-30V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-723SOD-123+ Package PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. zApplications • High surge capability. overvoltage protection. • Guardring Low current for rectification • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. zFeatures • Lead-free parts meet environmental standards of 1)MIL-STD-19500 Ultra Small mold/228 type. • RoHS product for packing code suffix "G" 2) Low IR. Halogen free product for packing code suffix "H" 3) High reliability. data Mechanical 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) RoHS forrated packing suffix "G" : UL94-V0 flamecode retardant • Epoxyproduct Halogen free product for packing code suffix "H" • Case : Molded plastic, SOD-123H Moisture Sensitivity Level 1 , • Terminals :Plated terminals, solderable per MIL-STD-750 Polarity: Color band denotes cathode end zConstruction Method 2026 epitaxial planar Silicon epit • Polarity : Indicated by cathode band SOD-723 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) • Mounting Position : Any •zDWeight 0.011 gram evice :M Approximated ark ing MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Device Marking Ratings at 25℃ ambient temperature unless otherwise specified. E SCS520G Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Marking Code VRRM Maximum Recurrent Peak Reverse Voltage Parameter 12 20 14 Maximum RMS Voltage VRMSSymbol VR Reverse voltage(DC) Maximum DC Blocking Voltage 20 VDC Io Average rectified forward current Maximum Average Forward Rectified Current IO IFSM Forward current surge peak （60Hz・1cyc） Tj Junction temperature Peak Forward Surge Current 8.3 ms single half sine-wave IFSM Tstg Operating/Storage temperature superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) zElectrical characteristics (Ta=25°C) Operating Temperature Range Param eter Storage Temperature Range Sym bol Forward voltage CHARACTERISTICS Revers e current VF Maximum Forward Voltage at 1.0A DC IR Unit 42 V 60 mA 1.0 mA ℃ 30 ℃ Limits 21 28 35 30 30 40 50 100 500 125 -40 to +125 18 80 10 100 Unit - 0.45 V V 56 70 105 140 80 100 150 200 V A A ℃ -55 to +150 Max. 120 200 V 40 120 Typ. 115 150 - 65 to +175 Conditions IF =10m A FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U SYMBOL µA 0.5 V =10V VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 16 60 -55 to +125 TJ - 15 50 CJ Min. TSTG 14 40 RΘJA Typical Thermal Resistance (Note 2) 13 30 @T A=125℃ IR 0.50 R 0.70 0.85 0.9 0.92 0.5 10 V m NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU SCS520G FM1200-M+ 100mA Surface Mount Rectifiers-30V 1.0A SURFACE MOUNT Schottky SCHOTTKYBarrier BARRIER RECTIFIERS -20V- 200V SOD-723 Package SOD-123+ PACKAGE Pb Free Product Package outline Features Electrical characteristic curves (Ta=25°C) power dissipation offers • Batch process design, excellent better reverse leakage current and thermal resistance. 1000000 1000 profile surface mounted application in order to • Low f=1MHｚ CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) optimize board Ta=125℃space. 100000 100 loss, high efficiency. • Low power Ta=75℃ Ta=75℃ 10000 drop. • High10current capability, low forward voltage • High 1surge capability. 1000 Ta=25℃ Ta=-25℃ • Guardring for overvoltage protection. Ta=25℃ 100 • Ultra0.1high-speed switching. Ta=-25℃ epitaxial planar chip, metal silicon junction. • Silicon 10 01 • Lead-free parts meet environmental standards of 1 001 MIL-STD-19500 /228 0 10 20 0 100 for 200 300 code 400 500 packing suffix6 "G" • RoHS product FORWARD VOLTAGE：VF(mV) REVERSE VOLTAGE：VR(V) Halogen freeVF-IF product for packing code suffix "H" CHARACTERISTICS VR-IR CHARACTERISTICS SOD-123H 100 Ta=125℃ 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 10 0.071(1.8) 0.056(1.4) 1 30 0 5 10 15 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 20 Mechanical data Method 2026 350 • Polarity : Indicated by cathode band 340 • Mounting Position : Any 330 • Weight : Approximated 0.011 gram 320 600 16 400 300 AVE:100.5nA 200 14 13 12 100 11 0 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 10 AVE:15.94pF Ratings at 25℃ ambient temperature unless otherwise specified. VF DISPERSION MAP IR DISPERSION MAP Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS 10 FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI 10 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH 1cyc Ifsm 15 Maximum Recurrent Peak Reverse Voltage 8.3ms Maximum RMS Voltage 10 Maximum DC Blocking Voltage AVE:3.90A Maximum Average Forward Rectified Current 5 Peak Forward Surge Current 8.3 ms single half sine-wave 12 20 Ifsm 13 VRRM VRMS 14 21 8.3ms 8.3ms 1cyc 28 5 VDC 20 30 40 0 RΘJA1 Typical Thermal Resistance (Note 2) CJ IFSM DISRESION Typical Junction Capacitance (Note 1) MAP 18 80 35 42 56 60 80 50 5 1 100 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) Volts 70 105 140 Volts 100 150 200 Volts Amp Amp 10 40 TIME:t(ms) 120 CHARACTERISTICS IFSM-t -55 to +150 ℃/W 100 -55 to +125 PF ℃ - 65 to +175 0.02 ℃ FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL 0.08 Rth(j-c) @T A=25℃ Mounted on @T epoxyA=125℃ board IM=10mA IF=100mA FORWARD POWER DISSIPATION:Pf(W) Maximum Average Reverse Current at DC VF D=1/2 0.06 IR 0.50 Sin(θ＝180) 0.04 0.02 0.015 0.70 0.9 0.85 0.5 0.92 mAm DC 0.005 Volts 10 0.01 D=1/2 Sin(θ＝180) time 1m 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 300u 2- Thermal Resistance From Junction to Ambient 10 0.001 2012-06 2012-11 120 200 0.1 CHARACTERISTICS 100 Voltage Rated DC Blocking 115 150 t 1.0 30 0 10 100 Ifsm Rth(j-a) Maximum Forward Voltage at 1.0A DC NOTES: 16 60 TSTG 1000 10 15 50 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS TJ Operating Temperature Range Storage Temperature Range 14 40 IO IFSM superimposed on0 rated load (JEDEC method) 30 REVERSE POWER DISSIPATION:PR (W) PEAK SURGE FORWARD CURRENT:IFSM(A) Marking Code Ct DISPERSION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) 20 Ta=25℃ 0.031(0.8) Typ. f=1MHz VR=0V n=10pcs 15 Dimensions in inches and (millimeters) 500 PEAK SURGE FORWARD CURRENT:IFSM(A) Ta=25℃ 19 0.031(0.8) Typ. VR=10V 18 n=30pcs 17 700 AVE:338.8mV 0.040(1.0) 0.024(0.6) 20 CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) FORWARD VOLTAGE:VF(mV) • Epoxy 370 : UL94-V0 rated flame retardant 1000 Ta=25℃ • Case : Molded plastic, SOD-123H 900 IF=10mA 360 , n=30pcs • Terminals :Plated terminals, solderable per800MIL-STD-750 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 0 1000 0 0 0.05 0.1 0.15 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.2 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU SCS520G FM1200-M+ 100mA Surface Mount Schottky Barrier Rectifiers-30V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-723SOD-123+ Package PACKAGE Package outline Features process design, excellent power dissipation offers • Batch 0.3 0.3 better reverse leakage current and thermal resistance. SOD-123H 0A Io optimize board space. t AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) mounted application in order to • Low profile surface0A 0V VR D=t/T VR=15V • Low0.2power DC loss, high efficiency. T Tj=125℃ • High current capability, low forward voltage drop. D=1/2 capability. • High surge 0.1 • Guardring for overvoltage protection. Sin(θ＝180) switching. • Ultra high-speed • Silicon epitaxial planar chip, metal silicon junction. 0 parts meet environmental • Lead-free 0 25 50 75 100 125 standards of • Pb Free Product 0V 0.2 t 0.146(3.7) 0.130(3.3) DC Io T VR D=t/T VR=15V Tj=125℃ 0.012(0.3) Typ. D=1/2 0.1 0.071(1.8) 0.056(1.4) Sin(θ＝180) 0 0 25 MIL-STD-19500 /228 AMBIENT TEMPERATURE:Ta(℃) Curveﾞ(Io-Ta) RoHS productDerating for packing code suffix "G" Halogen free product for packing code suffix "H" 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. SOD−723 Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram For capacitive load, derate current by 20% RATINGS .014(0.35) .009(0.25) .026(0.65) .021(0.55) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .043(1.10) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. .035(0.90) 0.031(0.8) Typ. SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Marking Code VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 V Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 150 200 V Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) .007(0.18) .003(0.08) Maximum Recurrent Peak Reverse Voltage RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 80 100 .026(0.65) 1.0 .017(0.45) A 30 40 120 -55 to +125 A ℃ -55 to +150 - 65 to +175 TSTG .059(1.50) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U CHARACTERISTICS Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current .051(1.30) at @T A=25℃ Rated DC Blocking Voltage VF @T A=125℃ 0.50 0.70 0.85 0.9 0.92 0.5 IR 10 V m NOTES: Dimensions in inches and (millimeters) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU SCS520G FM1200-M+ 100mA Barrier Rectifiers-30V 1.0A Surface SURFACEMount MOUNTSchottky SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-723 SOD-123+ PackagePACKAGE Features Pb Free Product Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) high efficiency. • Low power loss,Device PN Packing 0.130(3.3) low forward voltage drop. • High current capability,(1) (2) SCS520G ‐T G ‐WS Tape&Reel: 8 Kpcs/Reel capability. • High surge Guardring for overvoltage protection. • Note: (1) Packing code, Tape & Reel Packing • Ultra high-speed switching. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction. • Silicon • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 which may be included on WILLAS data sheets and/ or specifications can Maximum Recurrent Peak Reverse Voltage Vol VRRM Vol 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS and do vary in different applications and actual performance may vary over time. Vol Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or Am Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Am superimposed on rated load (JEDEC method) ℃/W 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS products are not designed, intended or authorized for use in medical, PF 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 life‐saving implant or other applications intended for life‐sustaining or other related Operating Temperature Range TJ ℃ - 65 to +175 Storage Temperature Range TSTG ℃ applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS or indirectly cause injury or threaten a life without expressed written approval SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Vol 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR mAm such applications do so at their own risk and shall agree to fully indemnify WILLAS 10 @T A=125℃ Rated DC Blocking Voltage Inc and its subsidiaries harmless against all claims, damages and expenditures. NOTES: MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.