WILLAS FM120-M+ SESMF05CTHRU 5-Line Transient Voltage Suppressor Array FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. Features General Description power loss, high efficiency. • Low The• High SESMF05C is low a forward transient voltage current capability, voltage drop. surge capability. • Highdesigned suppressor to protect components which • Guardring for overvoltage protection. are connected to data and transmission lines against switching. • Ultra high-speed Silicon epitaxial planar chip, metalthe silicon junction. ESD. It •clamps the voltage just above logic level • Lead-free parts meet environmental standards of supply for positive transients and to a diode drop MIL-STD-19500 /228 product for packing code suffix "G" • RoHS for below ground negative transients. 0.012(0.3) Typ. 100 Watts Peak Pulse Power0.130(3.3) per Line (tp=8/20μs) z Monolithic Structure z Clamping Voltage :5V z Low Clamping Voltage z Low Leakage Current z Protects Four (4) Bidirectional Lines and Five (5) z Unidirectional Lines Pb-Free package is available Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant Applications 0.146(3.7) z 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) RoHS product for packing code suffix ”G” plastic, SOD-123H • Case : Molded Computer Notebooks 0.031(0.8) Typ. 0.031(0.8) Typ. ,Halogen free product for packing code suffix “H” • Terminals :Plated terminals, solderable per MIL-STD-750 Communication Systems & Cellular Phones z z Method 2026 Printers • Polarity : Indicated by cathode band Personal Digital Assistant (PDA) • Mounting Position : Any Video Equipment • Weight : Approximated 0.011 gram z z z Complies with the following standards Dimensions in inches and (millimeters) IEC61000-4-2 Level 4 15 kV (air discharge) 8 kV(contact discharge) MAXIMUM RATINGS AND ELECTRICALMIL CHARACTERISTICS STD 883E - Method 3015-7 Class 3 Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% Functional Diagram RATINGS 25 kV HBM (Human Body Model) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 V Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum Average Forward Rectified Current IO IFSM Maximum Recurrent Peak Reverse Voltage Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) SOT-563 Typical Junction Capacitance (Note 1) RΘJA CJ TJ Operating Temperature Range Storage Temperature Range 1.0 30 40 120 -55 to +125 ℃ -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Forward Voltage at 1.0A DC 0.50 Absolute Ratings @ 25℃ Unless Otherwise Specified Maximum Average Reverse Current at @T A=25℃ Symbol Rated DC Blocking Voltage Parameter 0.9 10 Value Units Operating Temperature 1- MeasuredT atJ 1 MHZ and applied reverse voltage of 4.0 VDC. -55℃ to 150 ℃ ℃ 2- Thermal T Resistance From Junction to Ambient Storage Temperature -55℃ to 150℃ ℃ 2012-09 2012-06 0.92 Watts STG Peak Pulse Power (tp=8/20μs)See Figure 1 0.85 0.5 100 NOTES: PPP @T A=125℃ IR 0.70 m WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SESMF05CTHRU 5-Line Transient Voltage Suppressor Array FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Electrical Parameter Pb Free Product Package outline Symbol Parameter Features • Batch process design, excellent power dissipation offers IPP better reverse Maximum Reverse Pulse Current leakage currentPeak and thermal resistance. • Low profile surface mounted application in order to VC optimize Clamping Voltage @ IPP board space. loss, high efficiency. • Low power VRWM Working Peak Reverse Voltage • High current capability, low forward voltage drop. Maximum Reverse Leakage Current @ IR• High surge capability. VRWM for overvoltage protection. • Guardring switching. IT• Ultra high-speed Test Current • Silicon epitaxial planar chip, metal silicon junction. VBR Breakdown @ IT standards of parts meetVoltage environmental • Lead-free MIL-STD-19500 /228 IF RoHS product Forward Current for packing code suffix "G" • free product for packing suffix "H" VF HalogenForward Voltage @ Icode F SOD-123H 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data Electrical Characteristics 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H VBR , • Terminals :Plated terminals, solderable per MIL-STD-750 C 0.031(0.8) Typ. 0.031(0.8) Typ. VRWM IR IT Typ. 0v Part NumbersMethod 2026 Min. Typ. Max. bias Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band • Mounting Position : Any V V V mA V µA pF • Weight : Approximated 0.011 gram SESMF05C 6.1 6.7 7.2 1 5.0 1 35 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 V Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) 1.0 30 40 120 -55 to +125 Figure 1 Peak Pulse Power VS Pulse Time TJ Operating Temperature Range Storage Temperature Range A A ℃ -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 V 10 m NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-09 2012-06 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SESMF05CTHRU 5-Line Transient Voltage Suppressor Array 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Figure 2 Pulse Wave Form FM1200-M+ Pb Free Product Figure outline 3 Power Derating Curve Package Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 in inches and (millimeters) 4 by Typical Voltage VS Peak Pulse CurrentDimensions SESMF05C • Polarity : Figure Indicated cathodeClamping band • Mounting Position : Any • Weight : Approximated 0.011 gram SOT-563 Mechanical Data MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS Marking Code .024(0.60) .012(0.30) .020(0.50) .059(1.50)SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U .004(0.10) 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 V VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum Average Forward Rectified Current IO IFSM .043(1.10) VRRM .051(1.30) Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 1.0 30 -55 to +125 A .067(1.70) .059(1.50) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. .067(1.70) For capacitive load, derate current by 20% A 40 120 ℃ -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ NOTES: IR 0.50 .011(0.27) .007(0.17) 0.70 0.85 0.5 0.9 0.92 V 10 .007(0.16) .003(0.08) m 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-09 Dimensions in inches and (millimeters) 2012-06 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SESMF05CTHRU 5-Line Transient Voltage Suppressor Array 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE FM1200-M+ Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power Mounting Padloss, high efficiency. 0.146(3.7) 0.130(3.3) • High current capability, low forward voltage drop. • High surge capability. Typical protection. • Guardring for overvoltage high-speed switching. • Ultra DIM MILLIMETERS INCHES • Silicon epitaxial planar chip, metal silicon junction. 1 0.30 0.012 • Lead-free parts meet environmental standards of MIL-STD-19500 /228 1.02 2 0.040 • RoHS product for packing code suffix "G" 3 free product for0.51 0.020 Halogen packing code suffix "H" Mechanical data 4 1.40 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 0.055 0.040(1.0) 0.024(0.6) flame retardant • Epoxy 5 : UL94-V0 rated0.51 0.020 • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ Marking ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% Type numberRATINGS Marking code SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH CE Marking Code U Maximum Recurrent Peak Reverse Voltage VRRM 12 20 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum Average Forward Rectified Current IO IFSM SESMF05C Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 V 1.0 30 40 120 -55 to +125 A A ℃ -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 V 10 m NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-09 2012-06 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.