WILLAS FM120-M+ BAS16XTHRU FM1200-M+ SOD-523 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Swithching Diode Features Batch • FEATURES process design, excellent power dissipation offers better reverse leakage current and thermal resistance. z High-Speed Switching Applications mounted application in order to • Low profile surface optimize board space. z Lead Finish: 100% Matte Sn ( Tin ) • Low power loss, high efficiency. ℃ drop. z Qualified Reflow Temperature: capability, low forward 260 voltage • High current capability. • High surge Small z Extremely SOD-523 Package • Guardring for overvoltage protection. Pb-Free package is available switching. • Ultra high-speed Siliconproduct epitaxial planar chip, metal silicon junction. •RoHS for packing code suffix ”G” • Lead-free parts meet environmental standards of SOD-523 SOD-123H 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Halogen free product for packing code suffix “H” MIL-STD-19500 /228 z z for packingLevel code suffix • RoHS product Moisture Sensitivity 1 "G" Halogen free product for denotes packing code suffix "H" Polarity: Color band cathode end Mechanical data MARKING: A6: UL94-V0 rated flame retardant • Epoxy Maximum Ratings Electrical Characteristics, Single Diode @Ta=25℃ : Moldedand plastic, SOD-123H • Case 0.031(0.8) Typ. • Terminals :Plated terminals, solderable per MIL-STD-750 Parameter Method 2026 Unit Dimensions in inches and (millimeters) 75 V IF 200 mA MAXIMUM RATINGS AND ELECTRICAL 500 Pak Forward Surge Current IFM(surge) CHARACTERISTICS mA Ratings at 25℃ ambient temperature unless otherwise specified. Total Dissipation SingleDevice phase half wave, 60Hz, resistive of inductive load. PD For capacitive load, derate current by 20% Thermal Resistance Junction to Ambient Rθ 150 mW 833 ℃/W JA SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN RATINGS Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 -55~+150 15 50 16 60 18 80 10 100 ℃ 115 150 120 200 Vo Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Vo VDC 20 30 40 50 60 80 100 150 200 Vo Tj ,Tstg Operating/Junction and Storage Temperature Electrical Ratings @Ta=25℃ Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Parameter IO Symbol Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated loadvoltage (JEDEC method) Reverse breakdown IFSM V(BR) RΘJA Typical Thermal Resistance (Note 2) VF1 CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range VF2 TSTG Storage Temperature Range Forward voltage CHARACTERISTICS VSYMBOL F3 VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ VF4 IR Rated DC Blocking Voltage Limit VR DC Reverse Voltage 0.031(0.8) Typ. , Symbol • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Forward Current 0.040(1.0) 0.024(0.6) Reverse recovery Time @T A=125℃ Min 75 Typ Max 1.0 30 Unit -55 to +125 40 120 715 Am IR=100uA ℃/ IF=1mA P ℃ - 65 to +175 IF=10mA mV ℃ 1000 FM150-MH FM160-MH FM180-MH IF=50mA FM120-MH FM130-MH FM140-MH FM1100-MH FM1150-MH FM1200-MH UN 0.50 0.70 1250 0.85 0.5 IF=150mA 0.9 0.92 Vo 10 mA IF=IR=10mAdc,RL=50Ω 6.0 ns 1.0 μA VR=75V VFR 1.75 V IF=10mA, tr= 20ns CD 2.0 pF VR=0V,f=1MHZ 45 pC trr -55 to +150 855 Am Conditions NOTES: 1Measuredcurrent at 1 MHZ and applied reverse voltage of 4.0 VDC. Reverse IR 2- Thermal Resistance From Junction to Ambient Forward recovery voltage Diode capacitance Stored charge 2012-06 2012-1 QS IF=10mA, VR=5.0V ,RL=500Ω WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BAS16XTHRU FM1200-M+ SOD-523 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to Typical Characteristics 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. Characteristics 0.071(1.8) 0.056(1.4) Ta=100℃ (nA) T= a 2 5℃ Halogen free product for packing code suffix "H" • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , •0.1Terminals :Plated terminals, solderable per MIL-STD-750 REVERSE CURRENT IR MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Mechanical data 1 Reverse 1000 10 T= a 1 00 ℃ FORWARD CURRENT IF (mA) optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. Forward Characteristics •150High surge capability. •100Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 100 0.040(1.0) 0.024(0.6) 10 Ta=25℃ 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band Position : Any •0.01Mounting 0.0 0.2 0.4 0.6 0.8 • Weight : Approximated gram FORWARD 0.011 VOLTAGE V (V) Dimensions in inches and (millimeters) 1.0 1 1.2 0 20 40 60 REVERSE VOLTAGE F VR 80 (V) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 1.2 RATINGS a Marking Code VRRM 20 13 30 Maximum RMS Voltage VRMS 14 21 Maximum DC Blocking Voltage VDC 20 30 Maximum Average Forward Rectified Current IO IFSM 1.0 Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 0.8 0 5 10 CHARACTERISTICS Maximum Forward Voltage atREVERSE 1.0A DCVOLTAGE VR (V) 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Vo 28 35 42 56 70 105 140 Vo 40 50 60 80 100 150 200 Vo 1.0 30 100 40 120 50 -55 to +125 Am Am ℃ P -55 to +150 ℃ TSTG - 65 to +175 15 SYMBOL 20 0 25 50 75 125 FM1150-MH 150 FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH100 FM1100-MH FM1200-MH UN VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 150 PD f=1MHz 12 (mW) Maximum Recurrent Peak Reverse Voltage CAPACITANCE BETWEEN TERMINALS CT (pF) Power Derating Curve 200 FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN SYMBOL FM120-MH T =25 ℃ POWER DISSIPATION Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% Capacitance Characteristics @T A=125℃ IR ℃ 0 0.50 AMBIENT Ta (℃) 0.70 TEMPERATURE 0.85 0.5 0.9 0.92 Vo 10 mA NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BAS16XTHRU FM1200-M+ SOD-523 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing SOD-523 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of .014(0.35) .009(0.25) Halogen free product for packing code suffix "H" Mechanical data .043(1.10) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) .035(0.90) .028(0.70) MIL-STD-19500 /228 product for packing code suffix "G" • RoHS .051(1.30) 0.146(3.7) 0.130(3.3) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) .028(0.70) .020(0.50) .008(0.20) .002(0.05) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Marking Code Maximum Recurrent Peak Reverse Voltage VRRM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Storage Temperature Range CHARACTERISTICS 120 200 Vo 28 35 42 56 70 105 140 40 50 60 80 100 150 200 Vo 1.0 30 O IFSM 40 120 -55 to +125 Am Am ℃ P -55 to +150 ℃ - 65 to +175 ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 115 150 30 .006(0.15)MIN. Maximum Forward Voltage at 1.0A DC 10 100 21 TSTG 18 80 20 TJ Operating Temperature Range 16 60 14 CJ Typical Junction Capacitance (Note 1) 15 50 DC RΘJA Typical Thermal Resistance (Note 2) 14 40 RMS Maximum DC Blocking Voltage 13 30 Vo .067(1.70)V V .059(1.50) Maximum Average Forward Rectified Current I Maximum RMS Voltage 12 20 @T A=125℃ 0.50 0.70 0.85 0.5 IR 0.9 0.92 Vo 10 mA NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-1 Rev.C CORP. WILLAS ELECTRONIC WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BAS16XTHRU FM1200-M+ SOD-523 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline FeaturesInformation: Ordering • Batch process design, excellent power dissipation offers better reverseDevice PN leakage current and thermal resistance. (1) (2) application in order to surface mounted • Low profile BAS16X‐T G ‐WS optimize board space. Packing SOD-123H Tape&Reel: 3 Kpcs/Reel 0.146(3.7) loss, high efficiency. • Low power Note: (1) Packing code, Tape&Reel Packing 0.130(3.3) • High current capability, low forward voltage drop. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant 0.040(1.0) 0.024(0.6) • Case : Molded plastic, SOD-123H ***Disclaimer*** , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. WILLAS reserves the right to make changes without notice to any product Method 2026 Dimensions in inches and (millimeters) • specification herein, to make corrections, modifications, enhancements or other Polarity : Indicated by cathode band • Mounting Position : Any changes. WILLAS or anyone on its behalf assumes no responsibility or liability • Weight : Approximated 0.011 gram for any errors or inaccuracies. Data sheet specifications and its information MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS contained are intended to provide a product description only. "Typical" parameters Ratings at 25℃ ambient temperature unless otherwise specified. which may be included on WILLAS data sheets and/ or specifications can Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% and do vary in different applications and actual performance may vary over time. SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U RATINGS WILLAS does not assume any liability arising out of the application or Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximumuse of any product or circuit. Recurrent Peak Reverse Voltage Vo VRRM Vo 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS Vo Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS products are not designed, intended or authorized for use in medical, Am Maximum Average Forward Rectified Current IO 1.0 life‐saving implant or other applications intended for life‐sustaining or other related Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Am superimposed on rated load (JEDEC method) applications where a failure or malfunction of component or circuitry may directly ℃ 40 Typical Thermal Resistance (Note 2) RΘJA or indirectly cause injury or threaten a life without expressed written approval P 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Operatingof WILLAS. Customers using or selling WILLAS components for use in Temperature Range TJ ℃ - 65 to +175 Storage Temperature Range TSTG ℃ such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures . FM1100-MH FM1150-MH FM1200-MH UN CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 Vo 10 mA NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.