WILLAS MMBT2907ADW1T1

WILLAS
FM120-M+
MMBT2907ADW1T1
THRU
Transistor
Dual
General
1.0A SURFACE
MOUNT Purpose
SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
FM1200-M+
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
Featrues
• High current capability, low forward voltage drop.
declare
the material of product compliance with RoHS requirements.
High
surgethat
capability.
z•We
Guardring
for
overvoltage
protection.
z•Pb-Free
package is available
Ultra high-speed
switching.
•RoHS
product for packing code suffix ”G”
• Silicon epitaxial planar chip, metal silicon junction.
Halogen free product for packing code suffix “H”
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
6
1
MIL-STD-19500 /228
MAXIMUM
RATINGS
product for packing code suffix "G"
• RoHS
Value
Halogen free product for packing code suffix
"H"
Rating
Symbol
2907 2907A
Mechanical data
Collector–Emitter Voltage
V CEO
–40
–60
retardant
• Epoxy : UL94-V0 rated flame
–60
Collector–Base
Voltage
V CBO
plastic, SOD-123H
• Case : Molded
–600
2
Vdc
0.040(1.0)
0.024(0.6)
Vdc
0.031(0.8) Typ.
(3)
(2)
Q 1 in inches and (millimeters)
Dimensions
Q2
Unit
Max
• WeightCharacteristic
: Approximated 0.011 gram Symbol
225
mW
Total Device Dissipation FR– 5 Board, (1)
PD
(4)
(5)
(6)
TA = 25°C MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Derate
aboveambient
25°C temperature unless otherwise specified.
1.8
mW/°C
Ratings
at 25℃
Thermal
Junction
to Ambient
RθJA
556
°C/W
Single
phaseResistance,
half wave, 60Hz,
resistive
of inductive
load.
Total Device
Dissipation
PD
300
mW
For capacitive
load,
derate current by 20%
Alumina Substrate,
(2)
T
A = 25°C
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
RATINGS
ORDERING INFORMATION
Derate above 25°C
2.4
mW/°C
Marking Code
12
13
14
15
16
18
10
115
120
Thermal Resistance, Junction to Ambient
RθJA
417
Device
Shipping
20
30 °C/W 40
50
60
80 Marking
100
150
200
Maximum Recurrent Peak Reverse Voltage
Vo
VRRM
Junction and Storage Temperature
TJ , Tstg
–55 to +150
°C
Vo
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
2F
MMBT2907ADW1T1
3000 Units/Reel
Vo
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
DEVICE MARKING
IO
Peak Forward Surge Current 8.3 ms single half sine-wave
IFSM otherwise noted.)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless
1.0
30
MMBT2907ADW1T1 = 2F
superimposed on rated load (JEDEC method)
Characteristic
Typical Thermal Resistance
(Note 2)
RΘJA
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
OFF CHARACTERISTICS
Collector–Emitter
Breakdown Voltage(3)
Storage
Temperature Range
TSTG
Symbol
-55 to +125
V
A
A
Max 40 Unit
120
℃
P
-55 to +150
℃
- 65 to +175Vdc
—
(BR)CEO
℃
MMBT2907
–40
MMBT2907A
–60FM150-MH —
FM120-MH FM130-MH FM140-MH
FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
CHARACTERISTICS
SYMBOL
Vo
0.9
Maximum
Forward Voltage
at 1.0A DC
Collector–Emitter
Breakdown
Voltage(I C = –10 µAdc,
V (BR)CBO
–60
Vdc 0.85
0.92
VF I E = 0)
0.50
0.70—
IR
Cutoff
Current( V CB = –30Vdc,
I BE(OFF) = –0.5Vdc)
@T A=125℃
RatedCollector
DC Blocking
Voltage
Collector Cutoff Current
( V CB = –50Vdc, I E = 0)
NOTES:
V
(BR)EBO
I CEX
I CBO
–5.0
—
MMBT2907
MMBT2907A
—
—
MMBT2907
MMBT2907A
Base Current( V CE = –30Vdc, V EB(off)= –0.5Vdc )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
—
—
—
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Min
(I C = –10 mAdc, I B = 0)
Emitter–Base
Breakdown
Voltage(I
= –10 µAdc, I C = 0)
Maximum
Average Reverse
Current
at @TE A=25℃
(1)
0.031(0.8) Typ.
mAdc
Maximum Average Forward Rectified Current
4
0.071(1.8)
0.056(1.4)
3
THERMAL
CHARACTERISTICS
Position : Any
• Mounting
5
SOT-363
Unit
,
Emitter–Base
Voltage
V EBO
–5.0MIL-STD-750
Vdc
• Terminals
:Plated terminals,
solderable per
Method
2026 I C
Collector Current —
Continuous
• Polarity : Indicated by cathode band
0.012(0.3) Typ.
2- Thermal Resistance From Junction to Ambient
( V CB = –50Vdc, I E = 0, T A =125°C )
2012-06
2012-0
IB
— 0.5 Vdc
–50 10 nAdc
µAdc
–0.020
–0.010
–20
–10
–50
mA
nAdc
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
MMBT2907ADW1T1
THRU
Transistor
Dual
General
Purpose
1.0A SURFACE
MOUNT
SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
FM1200-M+
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
ELECTRICAL
CHARACTERISTICS
(T A = 25°C unless otherwise noted) (Continued)
surface mounted application
in order to
• Low profile
optimize boardCharacteristic
space.
Symbol
• Low power loss, high efficiency.
ON CHARACTERISTICS
Min
Max
Unit
0.146(3.7)
0.130(3.3)
High current capability, low forward voltage drop.
•DC
Current Gain
surge capability.
•(IHigh
MMBT2907
C = –0.1mAdc, V CE = –10 Vdc)
• Guardring for overvoltage protection.
MMBT2907A
• Ultra high-speed switching.
(I C =–1.0mAdc, V CE = –10 Vdc)
MMBT2907
• Silicon epitaxial planar chip, metal silicon junction.
MMBT2907A
of
• Lead-free parts meet environmental standards
hFE
MMBT2907
MMBT2907A
free product for packing code suffix "H"MMBT2907
(IHalogen
C = –150mAdc, V CE =–10 Vdc)(3)
Mechanical data
MMBT2907A
(I
=
–500mAdc,
V
=–10
Vdc)(3)
MMBT2907
C
: UL94-V0CErated flame retardant
• Epoxy
MMBT2907A
• Case : Molded plastic, SOD-123H
Collector–Emitter Saturation Voltage(3)
,
• Terminals :Plated terminals, solderable per MIL-STD-750
(I C = –150mAdc, I B = –15 mAdc)
Method 2026
(I C = –500 mAdc, I B = –50 mAdc)
•Base–Emitter
Polarity : Indicated
byVoltage(3)
cathode band
Saturation
Position
AnymAdc)
•(IMounting
I B = :–15
C = –150mAdc,
(I
=
–500mAdc,
I
=
–50
B
C
• Weight
: Approximated mAdc)
0.011 gram
––
35
75
50
100
75
100
––
100
30
50
(IMIL-STD-19500
= –10Vdc)
C = –10 mAdc, V CE
/228
• RoHS product for packing code suffix "G"
––
––
––
––
––
––
––
300
––
––
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
VCE(sat)
Vdc
––
––
V
0.012(0.3) Typ.
0.031(0.8) Typ.
–0.4
–1.6
Dimensions in inches and (millimeters)
Vdc
BE(sat)
––
––
–1.3
–2.6
200
––
MHz
––
8.0
pF
SMALL–SIGNAL CHARACTERISTICS
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Current–Gain — Bandwidth Product(3),(4)
Ratings at 25℃ ambient temperature unless otherwise specified.
(I C = –50mAdc, V CE= –20Vdc, f = 100MHz)
Single phase half wave, 60Hz, resistive of inductive load.
Output Capacitance
For capacitive load, derate current by 20%
(V CB = –10 Vdc, I E = 0, f = 1.0 MHz)
RATINGS
Input Capacitance
f
C
obo
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
(V EB = –2.0Vdc, I C = 0, f = 1.0 MHz)
Maximum Recurrent Peak Reverse Voltage
SWITCHING
CHARACTERISTICS
Maximum
RMS Voltage
VRRM
12
20
13
30
VRMS
14
21
C
14
ibo
40
15
50
28
t40
on
td
tr
50
Turn–On
TimeVoltage
Maximum
DC Blocking
T
20
30
(V CC = –30 Vdc, VDC
Delay Time
Maximum Average Forward Rectified Current
I C = –150 mAdc, I B1IO= –15 mAdc)
Rise Time
Peak Forward
Surge Current 8.3 ms single half sine-wave
Fall Time
(V CC = –6.0 Vdc, IFSM
superimposed
on rated
Storage
Timeload (JEDEC method)
I C = –150 mAdc,I B1 = I B2 = 15 mAdc) Turn–OffResistance
Time
Typical Thermal
(Note 2)
RΘJA
CJ
3. Pulse
Test: PulseRange
Width < 300 µs, Duty Cycle < T
2.0%.
Operating
Temperature
J
Typical Junction Capacitance (Note 1)
35
tf
ts
t off
-55 to +125
––
30
16
60
18
80
42
56
— 60
45 80
—
10
1.0
—
40
—
30 30
—
80
40 100
—
120
pF
10
100
115
150
120
200
70
105
140
100
ns
150
200
ns
-55 to +150
- 65 to +175
4. f T Temperature
is defined asRange
the frequency at which |h f e | extrapolates
to unity.
Storage
TSTG
CHARACTERISTICS
Z o = 50 Ω
Maximum Average Reverse Current at @T
–30A=25℃
V
PRF = 150 PPS
Rated DC Blocking Voltage
RISE TIME <2.0 ns
NOTES:
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
INPUT
VF
INPUT Voltage at 1.0A DC
Maximum Forward
@T A=125℃
200
P.W. <200 ns
IR
1.0 k
1- Measured at 1 MHZ and applied reverse voltage of 4.0TO
VDC.
OSCILLOSCOPE
0
RISE
TIME < 5.0 ns
2- Thermal Resistance From Junction to Ambient
50
–16 V
200 ns
Figure 1. Delay and Rise Time Test Circuit
2012-06
2012-0
0.50
0.70
Z O= 50 Ω
PRF = 150 PPS
RISE TIME <2.0 ns
P.W. < 200 ns
+15 V
1.0 k
1.0 k
0
50
–30 V
0.85
0.5
10
0.9
0.92
–6.0 V
37
TO OSCILLOSCOPE
RISE TIME < 5.0 ns
1N916
200 ns
Figure 2. Storage and Fall Time Test Circuit
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
MMBT2907ADW1T1
THRU
Transistor
Dual
General
Purpose
1.0A SURFACE
MOUNT
SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
FM1200-M+
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
h FE , NORMALIZED CURRENT GAIN
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermalTYPICAL
resistance.CHARACTERISTICS
• Low profile surface mounted application in order to
optimize
board space.
3.0
efficiency.
• Low power loss,
–1.0 V
V CE =high
2.0 current capability,
• High
V CE = –10 V low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
1.0 high-speed switching.
• Ultra
• Silicon epitaxial planar chip, metal silicon junction.
0.7
• Lead-free parts meet environmental standards of
•
0.146(3.7)
0.130(3.3)
T J = 125°C
25°C
0.071(1.8)
0.056(1.4)
–55°C
0.3
Mechanical
data
: UL94-V0 rated flame retardant
• Epoxy
0.2
–0.1
–0.2 –0.3
–0.5 –0.7 –1.0
–2.0 –3.0 –5.0 –7.0 –10
–20 –30
: Molded plastic, SOD-123H
• Case
0.031(0.8) Typ.
,
I C , COLLECTOR CURREN (mA)
• Terminals :Plated terminals, solderable per MIL-STD-750
VOLTAGE (VOLTS)
V CE , COLLECTOR– EMITTER
–0.8
0.040(1.0)
0.024(0.6)
–50
–70 –100
–500
0.031(0.8) Typ.
–100 mA
mA
I C = –1.0 mA RATINGS –10
MAXIMUM
AND
ELECTRICAL CHARACTERISTICS
–500 mA
Ratings –0.6
at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
–0.4
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
Maximum RMS Voltage
VRMS
14
21
28
35
Maximum DC
Blocking Voltage
–0.005–0.01
–0.02 –0.03 –0.05 –0.7 –0.1
30 –1.0 40 –2.0 –3.0
50
VDC
–0.2 –0.320 –0.5 –0.7
–0.2
0
16
60
18
80
42
56
–5.0 60
–7.0 –10 80
IOI B , BASE CURRENT (mA)
Figure 4. Collector Saturation Region
Peak Forward Surge Current 8.3 ms single half sine-wave
IFSM
superimposed on rated load (JEDEC method)
300
CJ
Typical Junction Capacitance (Note 1)
200
V CC = –30
TJ V
Operating Temperature Range
@T A=125℃
100
70
50
IR
300.50
20
10
10
NOTES:7.0
7.0
1- Measured
at 1 MHZ and applied reverse voltage of 4.0 VDC.
5.0
2.0 V
5.0
2- Thermal
3.0 Resistance From Junction to Ambient
3.0
–5.0–7.0 –10
–20 –30
–50 –70 –100
I C , COLLECTOR CURRENT
Figure 5. Turn–On Time
2012-06
2012-0
115
150
120
200
70
105
140
–50 150
200
–20 100
–30
- 65 to +175
tf
V CCto
= –30
V
-55
+150
I C /I B = 10
I B1 = I B2
T J = 25°C
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum
20 Average Reverse Current at @T A=25℃
Rated DC Blocking
Voltage
t d@ V
BE(off) = 0 V
200
-55 to +125
t, TIME (ns)
t, TIME (ns)
CHARACTERISTICS
Maximum
Forward Voltage at 1.0A DC
30
40
120
300
I C /I B = 10
TSTG
T J = 25°C
100Temperature Range
tr
Storage
70
50
RΘJA
Typical Thermal Resistance (Note 2)
10
100
1.0
30
Maximum Average Forward Rectified Current
–300
Dimensions in inches and (millimeters)
Marking Code
–200
Figure 3. DC Current Gain
• Polarity : Indicated by cathode band
Mounting Position : Any
•–1.0
• Weight : Approximated 0.011 gram
0.012(0.3) Typ.
MIL-STD-19500
/228
0.5
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Method 2026
SOD-123H
–200 –300 –500
–5.0–7.0 –10
0.70
0.85
0.9
0.92
t ’ s = t s – 1/8 t f0.5
10
–20 –30
–50 –70 –100
–200 –300 –500
I C , COLLECTOR CURRENT (mA)
Figure 6. Turn–Off Time
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
MMBT2907ADW1T1
THRU
Transistor
Dual
General
Purpose
1.0A SURFACE
MOUNT
SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
FM1200-M+
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
TYPICAL
SMALL–SIGNAL
CHARACTERISTICS
power dissipation
offers
• Batch process design, excellent
better reverse leakage current and thermal resistance.
NOISE FIGURE
SOD-123H
• Low profile surface mounted application in order
V CE =to10 Vdc, T A = 25°C
–500 µA, R = 560 Ω
MIL-STD-19500 /228 S
µA, R S= 2.7 k Ω
code suffix "G"
•4.0RoHS product for–50packing
–100 µA, R S= 1.6 k Ω
Halogen free product for packing code suffix "H"
Mechanical data
RS=OPTIMUM SOURCE RESISTANCE
2.0
0.146(3.7)
0.130(3.3)
f=1.0 kHz
8.0
0.071(1.8)
0.056(1.4)
I C = –50µA
–100 µA
–500 µA
–1.0 mA
6.0
4.0
0.040(1.0)
0.024(0.6)
2.0
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
0
,
• 0.01
Terminals
solderable
0.02 0.05:Plated
0.1 0.2 terminals,
0.5 1.0 2.0
5.0 10 per
20 MIL-STD-750
50 100
0.031(0.8) Typ.
0
50
Method
2026
f, FREQUENCY
(kHz)
Polarity : Indicated
byFrequency
cathode band
Figure 7.
Effects
f T , CURRENT– GAIN — BANDWIDTH
PRODUCT (MHz)
7.0
Maximum Recurrent Peak Reverse Voltage
VRRM
Maximum
3.0RMS Voltage
VRMS
14
Maximum DC Blocking Voltage
VDC
20
2.0
Maximum Average
Forward Rectified
–0.1 –0.2 –0.3 –0.5
–1.0
Current
–2.0 –3.0
–5.0
–10IO
REVERSE
VOLTAGE
(VOLTS)
Peak Forward Surge Current
8.3 ms single
half sine-wave
IFSM
13
30
21
30
–20 –30
V BE(sat) @ I C /I B = 10
CHARACTERISTICS
Rated DC Blocking Voltage
VF
@T A=125℃
IR
NOTES:
–0.2
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
V CE(sat) @ I C /I B = 10
2- Thermal Resistance From Junction to Ambient
–0.5 –1.0 –2.0
80
–5.0 –10
60
40
30
20
–1.0
T J15
= 25°C 16
50
60
14
40
18
80
10
100
115
150
120
200
28
35
42
56
70
105
140
40
50
60
80
100
150
200
–2.0
–5.0
–201.0 –50
–10
–100 –200
I C , COLLECTOR CURRENT (mA)
30
–500 –1000
40
120
-55 to +150
65for
to V+175
R- θVC
CE(sat)
–0.5
V BE(on) @ V CESYMBOL
= –10 V FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Average Reverse Current at @T A=25℃
– 0.4
100
0
TSTG
Maximum Forward Voltage at 1.0A DC
2012-06
50 k
200
-55 to +125
COEFFICIENT (mV/ ° C)
V, VOLTAGE (VOLTS)
Storage
–0.8Temperature Range
2012-0
20 k
300
+0.5
TJ
T J = 25°C Range
Operating Temperature
0
–0.1 –0.2
10 k
Figure 10. Current–Gain — Bandwidth Product
CJ
–1.0
Typical
Junction Capacitance (Note 1)
5.0 k
400
RΘJA
Typical Thermal Resistance (Note 2)
2.0 k
VCE=–20 V
FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH
RATINGS
C cb 12
20
–0.6
1.0 k
Dimensions in inches and (millimeters)
superimposed on rated load Figure
(JEDEC method)
9. Capacitances
500
C eb
MAXIMUM RATINGS
AND ELECTRICAL CHARACTERISTICS
Marking 5.0
Code
200
Figure 8. Source Resistance Effects
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
10
For capacitive load, derate current by 20%
C, CAPACITANCE(pF)
100
0.031(0.8) Typ.
R S, SOURCE RESISTANCE ( Ω )
•
• Mounting Position : Any
•30Weight : Approximated 0.011 gram
20
0.012(0.3) Typ.
10
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
optimize board space.
• Low power loss, high efficiency.
•10High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
8.0
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
I = –1.0 mA, R S= 430 Ω
6.0
standards of
• Lead-free parts Cmeet environmental
–20
–50 –100 –200
0.50
– 1.0
0.70
0.85
0.9
0.92
0.5
10
–1.5
R θVB for V BE
–2.0
–2.5
–500
–0.1 –0.2
–0.5 –1.0 –2.0
–5.0 –10
–20
–50 –100 –200
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 11. “On” Voltage
Figure 12. Temperature Coefficients
–500
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
MMBT2907ADW1T1
THRU
Transistor
Dual
General
Purpose
1.0A SURFACE
MOUNT
SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
FM1200-M+
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
SOT-363
optimize board space.
.054(1.35)
.045(1.15)
MIL-STD-19500 /228
0.146(3.7)
0.130(3.3)
.004(0.10)MIN.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection. .087(2.20)
• Ultra high-speed switching.
.071(1.80)
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
• RoHS product for packing code suffix "G"
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
.071(1.80)
.096(2.45)
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
.030(0.75)
.021(0.55)
0.031(0.8) Typ.
.010(0.25)
.003(0.08)
Dimensions in inches and (millimeters)
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any.056(1.40)
• Weight : Approximated 0.011
gram
.047(1.20)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
.016(0.40)
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
14
VDC
20
14
40
15
50
16
60
18
80
10
100
115
150
120
200
21
28
35
42
56
70
105
140
30
40
50
60
80
100
150
200
IO
IFSM
1.0
30
40
120
-55 to +125
TJ
Storage Temperature Range
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS 0.5 mm (min)SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
Rated DC Blocking Voltage
0.50
0.70
0.85
0.9
0.92
0.5
IR
0.65 mm 0.65 mm
Maximum Forward Voltage at 1.0A DC
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.4 mm (min)
13
30
DimensionsRin
ΘJAinches and (millimeters)
CJ
Operating Temperature Range
VRMS
.004(0.10)
Maximum DC Blocking Voltage
12
20
.043(1.10)
.032(0.80)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
.004(0.10)MAX.
For capacitive load, derate current by 20%
10
1.9 mm
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.