UNISONIC TECHNOLOGIES CO., LTD 20N50 Power MOSFET 20A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N50 is an N-channel MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on-state resistance, high switching speed and low leakage current, etc. The UTC 20N50 is suitable for switching regulator application, etc. FEATURES * RDS(on) < 0.27Ω @ VGS=10V, ID=10A * High switching speed * Low leakage current SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 20N50L-T3P-T 20N50G-T3P-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-3P 1 G Pin Assignment 2 3 D S Packing Tube MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-895.B 20N50 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS ±30 V Continuous ID 20 A Drain Current (Note 2) Pulsed IDM 80 A Avalanche Current IAR 20 A Single Pulsed (Note 3) EAS 960 mJ Avalanche Energy 15 mJ Repetitive (Note 4) EAR Power Dissipation (TC=25°C) PD 150 W Channel Temperature Tch 150 °C Storage Temperature Range TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Ensure that the channel temperature does not exceed 150°C. 3. VDD=90V, Tch=25°C (initial), L=4.08mH, RG=25Ω, IAR=20A. 4. Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. THERMAL DATA PARAMETER Junction to Ambient Junction to Case UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 50 0.833 UNIT °C/W °C/W 2 of 5 QW-R502-895.B 20N50 Power MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Forward Gate-Source Leakage Current Reverse Gate-Source Breakdown Voltage ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall-Time SYMBOL BVDSS IDSS TEST CONDITIONS 500 V(BR)GSS ID=10mA, VGS=0V VDS=500V, VGS=0V VGS=+30V, VDS=0V VGS=-30V, VDS=0V IG=±10µA, VDS=0V VGS(TH) RDS(ON) VDS=10V, ID=1mA VGS=10V, ID=10A 2.0 IGSS CISS COSS CRSS QG QGS QGD tD(ON) tR tD(OFF) VGS=0V, VDS=25V, f=1.0MHz VGS=10V, VDD≈400V, ID=20A tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS (Note) Maximum Body-Diode Pulsed Current ISM (Note) Drain-Source Diode Forward Voltage VSD IS=20A, VGS=0V Body Diode Reverse Recovery Time tRR IS=20A, VGS=0V, dIDR/dt=100A/µs Body Diode Reverse Recovery Charge QRR Note: Ensure that the channel temperature does not exceed 150°C. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 100 +10 -10 V µA µA µA V 4.0 0.21 0.27 V Ω 3400 320 25 pF pF pF 70 45 25 130 70 280 nC nC nC ns ns ns 70 ns ±30 1300 20 20 A 80 A 1.7 V ns µC 3 of 5 QW-R502-895.B 20N50 TYPICAL CHARACTERISTICS Breakdown Voltage Variation vs. Temperature On-Resistance Junction Temperature 3.0 Drain-Source On-Resistance, RDS(ON) (Normalized) (Ω) Drain-Source Breakdown Voltage, BVDSS (Normalized) (V) 1.2 1.1 1.0 0.9 Note: 1. VGS=0V 2. ID=10mA 2.5 2.0 1.5 1.0 0.8 -100 -50 0 50 100 150 Junction Temperature, TJ (°С) Note: 1. VGS=10V 2. ID=10A 0.5 0.0 -100 200 -50 0 50 100 150 200 Junction Temperature, TJ (°С) Reverse Drain Current, IDR (A) Drain-Source On-Resistance, RDS(ON) (Ω) Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R502-895.B 20N50 Power MOSFET TYPICAL CHARACTERISTICS (Cont.) Transient Thermal Response Curve 100 Duty=0.5 0.2 NOTES: 1.θJC(t)=0.8333°C/W Max 2.Duty = t1/t2 3.TJ-TC = PD-θJC(t) -1 10 0.1 0.05 0.02 PD 0.01 10-2 10-5 t1 Single pulse 10-4 10-3 10-2 10-1 Pulse Width, t1 (sec) t2 100 101 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-895.B