UNISONIC TECHNOLOGIES CO., LTD UTT50P06 Power MOSFET -50A, -60V P-CHANNEL (D-S) POWER MOSFET 1 TO-220 DESCRIPTION The UTC UTT50P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand high energy in the avalanche. This UTC UTT50P06 is suitable for load switch, etc. 1 TO-262 FEATURES * VDS = -60V * ID = -50A * RDS(ON)=0.012Ω @ VGS=-10V, ID=-17A * High Switching Speed SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT50P06L-TA3-T UTT50P06G-TA3-T UTT50P06L-TN3-T UTT50P06G-TN3-T UTT50P06L-TN3-R UTT50P06G-TN3-R UTT50P06L-T2Q-R UTT50P06G-T2Q-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 TO-252 Package TO-220 TO-252 TO-252 TO-262 Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tube Tube Tape Reel Tube 1 of 4 QW-R502-596.C UTT50P06 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT -60 V ±20 V TC=25°C -50 (Note 5) A Continuous (TJ=175°C) ID Drain Current TC=125°C -27.5 A Pulsed IDM -80 A Avalanche Current IAR -50 A Single Pulse Avalanche Energy (Note 2) L=0.1mH EAS 125 mJ 113 (Note 4) W TO-220 TC=25°C TO-252 50 W TO-262 113 W Power Dissipation PD TO-220 2.5 (Note 3, 4) W TA=25°C TO-252 1.13 W TO-262 2.5 W Junction Temperature TJ -55~+150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Duty cycle≤1%. 3. When Mounted on 1" square PCB (FR-4 material). 4. See SOA curve for voltage derating. 5. Package limited. SYMBOL VDSS VGSS THERMAL CHARACTERISTICS PARAMETER Junction to Ambient Junction to Case SYMBOL TO-220 TO-252 TO-262 TO-220 TO-252 TO-262 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA θJC RATINGS 50 110 50 1.1 2.5 1.1 UNIT °C/W °C/W °C/W °C/W °C/W °C/W 2 of 4 QW-R502-596.C UTT50P06 Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source Leakage Current Gate- Source Leakage Current SYMBOL TEST CONDITIONS MIN BVDSS VGS(TH) VGS=0V, ID=-250µA VDS=VGS, ID=-250µA VDS=-60V, VGS=0V VDS=-60V, VGS=0V, TJ=125°C VDS=-60V, VGS=0V, TJ=150°C VGS=+20V, VDS=0V VGS=-20V, VDS=0V -60 -1 IDSS Forward Reverse IGSS TYP MAX UNIT -3 -1 -50 -100 +100 -100 V V µA nA nA ON CHARACTERISTICS Static Drain-Source On-State Resistance (Note 1) RDS(ON) VGS=-10V, ID=-17A VGS=-10V, ID=-50A, TJ=125°C VGS=-10V, ID=-50A, TJ=150°C VGS=-4.5V, ID=-14A VDS=-15V, ID=-17A VGS=-10V, VDS=-5V Forward Transconductance (Note 1) gFS On State Drain Current (Note 1) ID(ON) DYNAMIC PARAMETERS (Note 2) Input Capacitance CISS Output Capacitance COSS VGS=0V, VDS=-25V, f=1MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS (Note 2, 3) Total Gate Charge QG VGS=-10V, VDS=-30V, ID=-50A Gate to Source Charge QGS Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=-30V, RL=0.6Ω, ID≈ -50A, Turn-OFF Delay Time tD(OFF) VGEN=-10V, RG=6Ω Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS (TC=25°C) (Note 2) Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage (Note 1) VSD IF=-50A, VGS=0V Body Diode Reverse Recovery Time tRR IF=-50A, dI/dt=100A/µs Notes: 1. Pulse test; pulse width≤300µs, duty cycle≤2%. 2. Guaranteed by design, not subject to production testing. 3. Independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0.012 0.015 0.025 0.028 0.020 Ω 61 S A 4950 480 405 pF pF pF -50 110 19 28 15 70 175 175 -1.0 45 165 23 105 260 260 nC nC nC ns ns ns ns -50 -80 -1.6 70 A A V ns 3 of 4 QW-R502-596.C UTT50P06 Power MOSFET TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage 250 Drain Current vs. Gate Threshold Voltage 300 Drain Current, -ID (µA) Drain Current, -ID (µA) 300 200 150 100 50 200 150 100 50 0 0 0 0 20 40 60 80 100 Drain-Source Breakdown Voltage, -BVDSS (V) Drain-Source On-State Resistance Characteristics 20 0.4 0.8 2.0 2.4 1.2 1.6 Gate Threshold Voltage, -VTH (V) Drain Current vs. Source to Drain Voltage 60 50 16 VGS=-10V, ID=-17A 12 8 VGS=-4.5V, ID=-14A 4 0 0 0.2 0.25 0.05 0.1 0.15 Drain to Source Voltage, -VDS (V) Drain Current, -ID (A) Drain Current, -ID (A) 250 40 30 20 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Source to Drain Voltage, -VSD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-596.C