UNISONIC TECHNOLOGIES CO., LTD UT50N03

UNISONIC TECHNOLOGIES CO., LTD
UT50N03
Power MOSFET
50A, 30V N-CHANNEL
POWER MOSFET

FEATURES
* RDS(ON) < 14 mΩ @ VGS = 10 V, ID = 30 A
* Low capacitance
* Optimized gate charge
* Fast switching capability
* Avalanche energy specified


SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT50N03L-TM3-T
UT50N03G-TM3-T
UT50N03L-TN3-R
UT50N03G-TN3-R
UT50N03L-TND-R
UT50N03G-TND-R
Note: Pin Assignment: G: Gate D: Drain S: Source

Package
TO-251
TO-252
TO-252D
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tape Reel
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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UT50N03

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
50
A
Pulsed Drain Current (Note 2)
IDM
180
A
Single Pulsed Avalanche Energy (Note 3)
EAS
45
mJ
Power Dissipation
PD
50
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 0.1mH, IAS = 30A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C.

THERMAL DATA
PARAMETER
SYMBOL
Junction to Ambient (Note 3)
θJA
Junction to Case
θJC
Note: Surface-mounted on FR4 board using 1 sq in pad, 1 oz Cu
UNISONIC TECHNOLOGIES CO., LTD
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RATINGS
71.4
3.0
UNIT
°C/W
°C/W
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
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate-Threshold Voltage
SYMBOL
Drain-Source On-State Resistance
RDS(ON)
TEST CONDITIONS
MIN
BVDSS
IDSS
IGSS
VGS =0V, ID =250 µA
VDS=20V, VGS =0V
VDS =0V, VGS = ±20V
30
VGS(TH)
VDS =VGS, ID =250 µA
ID = 30 A
VGS = 11.5V
ID = 15 A
VGS = 10 V
ID = 30 A
ID = 30 A
VGS = 4.5V
ID = 15 A
1.0
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=12V, VGS =0V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VGS = 4.5 V, VDS =15 V,
ID = 30 A, RG = 3.0Ω
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VGS = 11.5 V, VDS =15 V,
I
Turn-OFF Delay Time
tD(OFF)
D = 30 A, RG = 3.0Ω
Turn-OFF Fall-Time
tF
Total Gate Charge
QG
VDS =15V,VGS =4.5V,
Gate-to-Source Charge
QGS
ID =30 A
Gate-to-Drain Charge
QGD
Total Gate Charge
QG
VDS =15V,VGS =11.5V,
Gate-to-Source Charge
QGS
ID =30 A
Gate-to-Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=30 A, VGS =0V
Maximum Continuous Drain-Source Diode
IS
Forward Current
Reverse Recovery Time
trr
IS = 30 A, VGS = 0 V,
dI /dt = 100 A/μs
Reverse Recovery Charge
QRR
TYP
MAX UNIT
1.5
±100
1.7
12
11.7
12.5
21
19
2.0
610
300
125
750
8.2
9.6
11.2
6.8
5.0
84
15
4.0
6.0
1.9
3.7
15
1.9
3.9
0.85
24
14
14
23
10
V
µA
nA
V
mΩ
mΩ
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
nC
nC
nC
1.1
V
45
A
ns
nC
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current,ID (A)
On-Resistance versus Gate-toSource Voltage
0.065
ID=15A
TJ=25℃
0.055
0.045
0.035
0.025
0.015
0.005
3
4
5
6
7
8
9 10
Gate-to-Source Voltage,VGS (V)
On-Resistance versus Drain Current
and Gate Voltage
TJ=25℃
0.025
VGS=4.5V
0.020
0.015
VGS=10V
0.010
0.005
0
10
20
30
40
50
Drain Current,ID (A)
Capacitance,C (pF)
Leakage,IDSS (nA)
2
0.030
Drain-to-Source Resistance,RDS(ON) (Ω)
Drain-to-Source Resistance,RDS(ON) (Ω)
Drain Current,ID (A)

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QW-R502-168.F
Gate-to-Source Voltage,VGS (V)
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Drain Current,ID (A)
Source Current,IS(A)
t,TIME (ns)

Drain-to-Source Voltage,VDS (V)
Effective Transient Thermal Resistance
(Normalized),r (t)
UT50N03
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
QW-R502-168.F
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UT50N03
Power MOSFET
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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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