UNISONIC TECHNOLOGIES CO., LTD 15N20 Power MOSFET 15A, 200V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N20 is an N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC 15N20 is universally applied in low voltage such as automotive, high efficiency switching for DC/DC converters and DC motor control, etc. FEATURES * RDS(ON)<0.28Ω @ VGS=10V * High Switching Speed SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 15N20L-TA3-T 15N20G-TA3-T 15N20L-TN3-R 15N20G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-252 Pin Assignment 1 2 3 G D S G D S Packing Tube Tape Reel MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-717.D 15N20 Power MOSFET ABSOLUTE MAXIMUM RATINGS (unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT 200 V ±30 V Continuous 15 A Continuous Drain Current Pulsed 60 A Single Pulsed Avalanche Current 15 A Single Pulsed Avalanche Energy 340 mJ TO-220 145 Power Dissipation PD W TO-252 83 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VDSS VGSS ID IDM IAS EAS THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL TO-220 TO-252 TO-220 TO-252 θJA θJC RATINGS 62.5 110 0.86 1.5 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Drain-Source Leakage Current IDSS VDS=200V, VGS=0V Forward VGS=+30V, VDS=0V Gate-Source Leakage Current IGSS Reverse VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=7.5A DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS VGS=0V, VDS=25V, f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG Gate to Source Charge QGS VGS=10V, VDD=50V, ID=1.3A Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=30V, ID=0.5A, RG=25Ω, VGS=10V, RL=30 Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=15A, VGS=0V UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 200 3 V 1 µA +100 nA -100 nA 5 0.18 0.28 V Ω 610 145 42 800 200 60 pF pF pF 27 5.6 10 39 63 210 83 32 45 90 230 110 nC nC nC ns ns ns ns 15 60 1.5 A A V 2 of 3 QW-R502-717.D 15N20 Power MOSFET TYPICAL CHARACTERISTICS Drain Current, ID (µA) 300 Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 300 250 250 Drain Current, ID (µA) 200 150 100 50 200 150 100 50 0 0 0 0.7 1.4 3.5 4.2 2.1 2.8 Gate Threshold Voltage, VTH (V) Drain Current, ID (A) Body-Diode Continuous Current, IS (A) 0 50 150 200 250 100 Drain-Source Breakdown Voltage, BVDSS (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-717.D