UNISONIC TECHNOLOGIES CO., LTD UF601Q Power MOSFET 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET DESCRIPTION The UTC UF601Q is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed. FEATURES * RDS(ON) < 700Ω @ VGS=0V, ID=3mA * High Switching Speed SYMBOL ORDERING INFORMATION Ordering Number Note: UF601QG-AE3-R UF601QG-AE2-R Pin Assignment: G: Gate D: Drain Package SOT-23 SOT-23-3 Pin Assignment 1 2 3 S G D S G D Packing Tape Reel Tape Reel S: Source MARKING 3 601QG 2 1 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-A25.C UF601Q Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER Drain-Source Voltage (Note 2) Drain-Gate Voltage (Note 2) Gate-Source Voltage SYMBOL RATINGS UNIT VDSS 600 V VDGX 600 V VGSS ±20 V 0.185 A Continuous ID Drain Current Pulsed IDM 0.740 A Power Dissipation PD 0.50 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. TJ=+25°C~+150°C THERMAL DATA PARAMETER Junction to Ambient SYMBOL θJA RATINGS 250 UNIT °C/W ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=-5V Drain-Source Leakage Current ID(OFF) VDS=600V, VGS=-5V Forward VGS=+20V, VDS=0V Gate-Source Leakage Current IGSS Reverse VGS=-20V, VDS=0V ON CHARACTERISTICS Gate to Source Cut Off Voltage VGS(OFF) VDS=3V, ID=8µA Drain-Source Leakage Current IDSS VDS=25V, VGS=0V Static Drain-Source On-State Resistance RDS(ON) VGS=0V, ID=3mA DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, Output Capacitance COSS f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=-5~5V, VDS=30V, Gate to Source Charge QGS ID=5mA Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VGS=-5~5V, VDD=30V, ID=5mA, RG=20Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD ISD=3.0mA, VGS=-10V Notes: 1. Repetitive rating, pulse width limited by maximum junction temperature. 2. Pulse width≤380μs; duty cycle≤2%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 600 0.1 +100 -100 -2.7 7.0 -1.5 300 700 V μA nA nA V mA Ω 15 145 4 pF pF pF 7.6 4 0.4 40 20 45 280 nC nC nC ns ns ns ns 1.4 V 2 of 3 QW-R502-A25.C UF601Q Power MOSFET TYPICAL CHARACTERISTICS Drain-Source On-State Resistance Characteristics Drain Current vs. Drain-Source Breakdown Voltage 3.5 3.0 250 Drain Current, ID (mA) Drain Current, ID (µA) 300 200 150 100 50 0 VGS=0V, ID=3mA 2.5 2.0 1.5 1.0 0.5 0 200 400 600 800 1000 Drain-Source Breakdown Voltage, BVDSS (V) 0 0 200 400 600 800 1000 Drain to Source Voltage, VDS (mV) Drain Current vs. Source to Drain Voltage 3.5 Drain Current, ID (mA) 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.2 0.4 0.6 0.8 1.0 Source to Drain Voltage, VSD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-A25.C