P84 0 WF WFP 840 annel MOS FET Silicon N-Ch Cha OSF Features ■ 8A,500V,RDS(on)(Max 0.8Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 59nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) rip General Desc scrip ripttion This Power MO SFET is pro du ced using Winsemi ’s ad van ced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a Electronic lamp ballast. ngs Absolute Max axiimum Rati tin Symbol VDSS Paramete terr Value Units 500 V Continuous Drain Current(@Tc=25℃) 8 A Continuous Drain Current(@Tc=100℃) 5.1 A 32 A ±30 V Drain Source Voltage ID IDM Drain Current Pulsed (Note1) VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) 320 mJ EAR Repetitive Avalanche Energy (Note 1) 13.4 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 3.5 V/ns Total Power Dissipation(@Tc=25℃) 134 W Derating Factor above 25℃ 1.0 W/℃ -55~150 ℃ 300 ℃ PD TJ, Tstg TL Junction and Storage Temperature Channel Temperature mite d by jun ct *Drain current li lim ted unct ctiion temperature al Ch arac stics Therm rmal Cha actteri ris Value Symbol Paramete terr Units Min Ty p Max RQJC Thermal Resistance, Junction-to-Case - - 0.93 ℃/W RQCS Thermal Resistance, Case-to-Sink - 0.5 - ℃/W RQJA Thermal Resistance, Junction-to-Ambient - - 62 ℃/W Rev.A Nov.2010 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. P84 0 WF WFP 840 arac C) Elec ecttrical Ch Cha actteristics (Tc = 25°C Characteristics Symbol Test Condition Min Type Max Unit IGSS VGS = ±30 V, VDS = 0 V - - ±100 nA V(BR)GSS IG = ±10 μA, VDS = 0 V ±30 - - V IDSS VDS = 400 V, VGS = 0 V - - 10 μA Drain−source breakdown voltage V(BR)DSS ID = 250 μA, VGS = 0 V 500 - - V Break Voltage Temperature ΔBVDSS/ ID=250μA, - 0.5 - Gate leakage current Gate−source breakdown voltage Drain cut−off current Coefficient ΔTJ Referenced V/℃ to 25℃ Gate threshold voltage VGS(th) VDS = 10 V, ID =250 μA 2 - 4 V Drain−source ON resistance RDS(ON) VGS = 10 V, ID = 4.0A - - 0.80 Ω Forward Transconductance gfs VDS = 40 V, ID = 4.0A - 7.3 - S Input capacitance Ciss VDS = 25 V, - 1400 Reverse transfer capacitance Crss VGS = 0 V, - 34 44 Output capacitance Coss f = 1 MHz - 145 190 VDD =250 V, - 22 55 ID =8A - 65 140 tf RG=9.1Ω - 125 260 toff RD=31Ω - 75 160 - 59 70 Rise time Turn−on time tr ton 1800 pF ns Switching time Fall time Turn−off time Total gate charge (gate−source (Note4,5) VDD = 400 V, Qg plus gate−drain) nC VGS = 10 V, Gate−source charge Qgs Gate−drain (“miller”) Charge Qgd ID = 8 A (Note4,5) - 7 9 - 28 32 s and Ch arac C) Sou Sourrce−Drain Rating ings Cha actteristics (Ta = 25°C Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current IDR - - - 8 A Pulse drain reverse current IDRP - - - 32 A Forward voltage (diode) VDSF IDR = 8 A, VGS = 0 V - - 1.4 V Reverse recovery time trr IDR = 8 A, VGS = 0 V, - 390 - ns Reverse recovery charge Qrr dIDR / dt = 100 A / μs - 4.2 - μC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=9mH,IAS=8A,VDD=50V,RG=25Ω,Starting TJ=25℃ 3.ISD≤8A,di/dt≤300A/us, VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2% 5.Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution 2 /7 Steady, keep you advance P84 0 WF WFP 840 3 /7 Steady, keep you advance P84 0 WF WFP 840 4 /7 Steady, keep you advance P84 0 WF WFP 840 10 Gate Tes cuit & Waveform Fig. Fig.1 estt Cir Circ 11 Res e Swit ching Tes cuit & Waveform Fig. Fig.1 esiistiv ive itc estt Cir Circ 12 Un clamped In ducti ve Switchi ng Test Cir cuit & Waveform Fig. Fig.1 Unc Ind tiv hin Circ 5 /7 Steady, keep you advance P84 0 WF WFP 840 13 Pea k Diode Rec overy dv/dt Test Cir cuit & Waveform Fig. Fig.1 eak eco Circ 6 /7 Steady, keep you advance P84 0 WF WFP 840 C Pa ckage Dim ension TO TO--220 220C Pac Dime Unit:mm 7 /7 Steady, keep you advance