WINSEMI WFU5N50

0
WFU5N5
5N50
con N-Channel MOSFET
Sili
lic
Features
■ 5A,500V,RDS(on)(Max1.6Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 32nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
Th is Power MO SFET is pro du ced usi ng Wins e mi ’s ad van ced
plana r stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugge d avalanche chara ct er istics. This devices is spe cially well
suited for high efficiency switch model power supplies, power factor
IPAK
correction and half bridge and full bridge resonant topology line a
electronic lamp ballast.
Absolute Maximum Ratings
Symbol
V DSS
Param ete
terr
Val
ue
alue
U n i ts
500
V
Continuous Drain Current(@Tc=25℃)
5
A
Continuous Drain Current(@Tc=100℃)
2.9
A
Drain Source Voltage
ID
IDM
Drain Current Pulsed
(Note1)
18
A
±30
V
300
mJ
V GS
Gate to Source Voltage
E AS
Single Pulsed Avalanche Energy
E AR
Repetitive Avalanche Energy
(Note 1)
7.5
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
61
W
0.49
W/℃
-55~150
℃
300
℃
(Note 2)
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ, Tstg
TL
Junction and Storage Temperature
Channel Temperature
Thermal Characteristics
ue
Val
alue
Symb ol
er
Para m et
ete
U ni
nitts
Min
Typ
M ax
R QJC
Thermal Resistance, Junction-to-Case
-
-
2.05
℃/W
R QCS
Thermal Resistance, Case-to-Sink
-
0.5
-
℃/W
R QJA
Thermal Resistance, Junction-to-Ambient
-
-
62.5
℃/W
Rev.A Jun.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
0
WFU5N5
5N50
Electrical Characteristics (Tc = 25℃)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
IGSS
VGS = ±30 V, VDS = 0 V
-
-
±100
nA
V(BR)GSS
IG = ±10 μA, VDS = 0 V
±30
-
-
V
Drain cut−off current
IDSS
VDS = 500 V, VGS = 0 V
-
-
1
μA
Drain−source breakdown voltage
V(BR)DSS
ID = 250 μA, VGS = 0 V
500
-
-
V
-
0.55
-
V/℃
Gate leakage current
Gate−source breakdown voltage
Break Voltage Temperature
ΔBVDSS/
ΔT J
Coefficient
ID=250μA,
Referenced
to
25℃
VGS(th)
VDS = 10 V, ID =250 μA
3
-
4.5
V
RDS(ON)
VGS = 10 V, ID = 2.25A
-
1.16
1.6
Ω
gfs
VDS = 40 V, ID = 2.25A
-
4.2
-
S
C iss
VDS = 25 V,
-
800
1050
Reverse transfer capacitance
C rss
VGS = 0 V,
-
16
21
Output capacitance
C oss
f = 1 MHz
-
76
100
VDD =250 V,
-
15
40
ton
ID =4.5A
-
40
90
tf
RG=25Ω
-
85
180
-
45
100
32
44
Gate threshold voltage
Drain−source ON resistance
Forward Transconductance
Input capacitance
Rise time
Switching time
Turn−on time
Fall time
Turn−off time
tr
(Note4,5)
toff
pF
ns
VDD = 400 V,
Total gate charge (gate−source
Qg
plus gate−drain)
VGS = 10 V,
-
ID =5 A
-
3.7
-
-
15
-
nC
Gate−source charge
Qgs
Gate−drain (“miller”) Charge
Qgd
(Note4,5)
Source−Drain Ratings and Characteristics (Ta = 25℃)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Continuous drain reverse current
IDR
-
-
-
5
A
Pulse drain reverse current
IDRP
-
-
-
18
A
Forward voltage (diode)
VDSF
IDR =5A, VGS = 0 V
-
-
1.4
V
Reverse recovery time
trr
IDR =5A, VGS = 0 V,
-
305
-
ns
Reverse recovery charge
Q rr
dIDR / dt = 100 A / μs
-
2.6
-
μC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=24mH,IAS=5A,V DD=50V,RG=25Ω,StartingTJ=25℃
3.ISD ≤5A,di/dt≤300A/us, VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
0
WFU5N5
5N50
3/7
Steady, keep you advance
0
WFU5N5
5N50
ximum Safe Operation Area
Fig.7 Ma
Max
xi
mum Drain Curr
ent vs
Fig.8 Ma
Maxi
xim
Curre
perature
Case Tem
emp
Fig.9 Tr
ansient Th
ermal Res
ponse Cu
Tra
The
esp
Currve
4/7
Steady, keep you advance
0
WFU5N5
5N50
cuit & Waveform
Fig
Fig..10 Gate Tes
estt Cir
Circ
e Swit
chi
ng Tes
cuit & Waveform
Fig
Fig..1 1 Res
esiistiv
ive
itc
hin
estt Cir
Circ
clamped In
ducti
ve Switchin
g Test Cir
cuit & Waveform
Fig
Fig..12 Un
Unc
Ind
tiv
ing
Circ
5/7
Steady, keep you advance
0
WFU5N5
5N50
k Diode Rec
overy dv/dt Test Cir
cuit & Waveform
Fig
Fig..1 3 Pea
eak
eco
Circ
6/7
Steady, keep you advance
0
WFU5N5
5N50
ckage Dim
ension
IPAK Pa
Pac
Dime
Unit:mm
7/7
Steady, keep you advance