0 WFU5N5 5N50 con N-Channel MOSFET Sili lic Features ■ 5A,500V,RDS(on)(Max1.6Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 32nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description Th is Power MO SFET is pro du ced usi ng Wins e mi ’s ad van ced plana r stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugge d avalanche chara ct er istics. This devices is spe cially well suited for high efficiency switch model power supplies, power factor IPAK correction and half bridge and full bridge resonant topology line a electronic lamp ballast. Absolute Maximum Ratings Symbol V DSS Param ete terr Val ue alue U n i ts 500 V Continuous Drain Current(@Tc=25℃) 5 A Continuous Drain Current(@Tc=100℃) 2.9 A Drain Source Voltage ID IDM Drain Current Pulsed (Note1) 18 A ±30 V 300 mJ V GS Gate to Source Voltage E AS Single Pulsed Avalanche Energy E AR Repetitive Avalanche Energy (Note 1) 7.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns 61 W 0.49 W/℃ -55~150 ℃ 300 ℃ (Note 2) Total Power Dissipation(@Tc=25℃) PD Derating Factor above 25℃ TJ, Tstg TL Junction and Storage Temperature Channel Temperature Thermal Characteristics ue Val alue Symb ol er Para m et ete U ni nitts Min Typ M ax R QJC Thermal Resistance, Junction-to-Case - - 2.05 ℃/W R QCS Thermal Resistance, Case-to-Sink - 0.5 - ℃/W R QJA Thermal Resistance, Junction-to-Ambient - - 62.5 ℃/W Rev.A Jun.2010 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. 0 WFU5N5 5N50 Electrical Characteristics (Tc = 25℃) Characteristics Symbol Test Condition Min Type Max Unit IGSS VGS = ±30 V, VDS = 0 V - - ±100 nA V(BR)GSS IG = ±10 μA, VDS = 0 V ±30 - - V Drain cut−off current IDSS VDS = 500 V, VGS = 0 V - - 1 μA Drain−source breakdown voltage V(BR)DSS ID = 250 μA, VGS = 0 V 500 - - V - 0.55 - V/℃ Gate leakage current Gate−source breakdown voltage Break Voltage Temperature ΔBVDSS/ ΔT J Coefficient ID=250μA, Referenced to 25℃ VGS(th) VDS = 10 V, ID =250 μA 3 - 4.5 V RDS(ON) VGS = 10 V, ID = 2.25A - 1.16 1.6 Ω gfs VDS = 40 V, ID = 2.25A - 4.2 - S C iss VDS = 25 V, - 800 1050 Reverse transfer capacitance C rss VGS = 0 V, - 16 21 Output capacitance C oss f = 1 MHz - 76 100 VDD =250 V, - 15 40 ton ID =4.5A - 40 90 tf RG=25Ω - 85 180 - 45 100 32 44 Gate threshold voltage Drain−source ON resistance Forward Transconductance Input capacitance Rise time Switching time Turn−on time Fall time Turn−off time tr (Note4,5) toff pF ns VDD = 400 V, Total gate charge (gate−source Qg plus gate−drain) VGS = 10 V, - ID =5 A - 3.7 - - 15 - nC Gate−source charge Qgs Gate−drain (“miller”) Charge Qgd (Note4,5) Source−Drain Ratings and Characteristics (Ta = 25℃) Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current IDR - - - 5 A Pulse drain reverse current IDRP - - - 18 A Forward voltage (diode) VDSF IDR =5A, VGS = 0 V - - 1.4 V Reverse recovery time trr IDR =5A, VGS = 0 V, - 305 - ns Reverse recovery charge Q rr dIDR / dt = 100 A / μs - 2.6 - μC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=24mH,IAS=5A,V DD=50V,RG=25Ω,StartingTJ=25℃ 3.ISD ≤5A,di/dt≤300A/us, VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2% 5.Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution 2/7 Steady, keep you advance 0 WFU5N5 5N50 3/7 Steady, keep you advance 0 WFU5N5 5N50 ximum Safe Operation Area Fig.7 Ma Max xi mum Drain Curr ent vs Fig.8 Ma Maxi xim Curre perature Case Tem emp Fig.9 Tr ansient Th ermal Res ponse Cu Tra The esp Currve 4/7 Steady, keep you advance 0 WFU5N5 5N50 cuit & Waveform Fig Fig..10 Gate Tes estt Cir Circ e Swit chi ng Tes cuit & Waveform Fig Fig..1 1 Res esiistiv ive itc hin estt Cir Circ clamped In ducti ve Switchin g Test Cir cuit & Waveform Fig Fig..12 Un Unc Ind tiv ing Circ 5/7 Steady, keep you advance 0 WFU5N5 5N50 k Diode Rec overy dv/dt Test Cir cuit & Waveform Fig Fig..1 3 Pea eak eco Circ 6/7 Steady, keep you advance 0 WFU5N5 5N50 ckage Dim ension IPAK Pa Pac Dime Unit:mm 7/7 Steady, keep you advance