WFU6N70 FET Silicon N-Channel MOS OSF Features ■ 6A,700V, RDS(on)(Max 1.5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 51nC) ■ High Current Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply. electronic Lamp ballasts based on half bridge and UPS. Absolute Maximum Ratings Symbol Value Units 700 V 6 A Continuous Drain Current(@Tc=100℃) 3.8 A IDM Drain Current Pulsed tp=300us 24 A V GS Gate to Source Voltage-Continuous ±30 V EAS Single Pulsed Avalanche Energy 582 mJ 6 A VDSS Parameter Drain Source Voltage Continuous Drain Current(@Tc=25℃) ID (Note 2) Is Source Current (Body Diode) PD Total Power Dissipation(@Tc=25℃) 120 W TJ, Tstg Junction and Storage Temperature -55~150 ℃ 260 ℃ TL Channel Temperature(1/8” from case for 10s) Thermal Characteristics Symbol Parameter R QJC R QJA Value Min Typ Max Thermal Resistance, Junction-to-Case - 0.96 1.04 Thermal Resistance, Junction-to-Ambient - 62.5 WT-F014-Rev.A0 Dec.2012 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. Units ℃/W ℃/W WFU6N70 Electrical Characteristics (Tc = 25℃) Characteristics Gate leakage current Gate−source breakdown voltage Drain cut−off current Symbol IGSS V(BR)GSS IDSS Drain−source breakdown voltage V(BR)DSS Break Voltage Temperature ΔBV DSS / Test Condition Min Type Max Unit - - ±100 nA ±30 - - V - - 10 μA 700 - - V - 0.79 - mV/℃ VGS = ±16 V, VDS = 0 V IG = 250μA, VDS = 0 V VDS=700V, VGS=0V, Tc = 25°°C ID = 250 μA, VGS = 0 V ID=250μA,Referenced to25℃ Coefficient ΔTJ Gate threshold voltage VGS(th) VDS = V GS, ID =250 μA 2 - 4 V Drain−source ON resistance RDS(ON) VGS = 10 V, ID = 12A - - 1.5 Ω Forward Transconductance gfs VDS = 50V, ID = 3A - 4.12 - S Input capacitance C iss VDS = 25 V, - 920 1200 Reverse transfer capacitance C rss VGS = 0 V, - 45 55 Output capacitance C oss f = 1 MHz - 100 115 tr VDD =350 - 23 55 ID =6A - 18 RG=11.5Ω - 26 60 - 76 160 - 51 67 Rise time Turn−on time ton Switching time Fall time Turn−off time Total gate charge (gate−source tf toff Qg plus gate−drain) ns 45 VDs =560V nC VGS =10V Gate−source charge Qgs Gate−drain (“miller”) Charge Qgd pF ID =6A - 8.3 - - 23.1 - Source−Drain Ratings and Characteristics (Ta = 25℃) Symbol Test Condition Min Type Max Unit Continuous drain reverse current Characteristics IDR - - - 6 A Pulse drain reverse current IDRP - - - 24 A Forward voltage (diode) VDSF IDR = 6A, VGS = 0 V - 1.5 V Reverse recovery time trr IDR = 6A, V GS = 0 V, - 440 - ns Reverse recovery charge Qrr dIDR / dt = 100 A / μs - 4.05 - μC Note - 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 30mH, IAS = 6A, VDD = 50V, RG = 27Ω, Starting TJ = 25°C 4. ISD ≤ 6A, di/dt ≤140A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 2/5 Steady, keep you advance WFU6N70 RVES TYPICAL PERFORMANCE CU CUR Fig 1.Output Characteristics n-Resistance vs. Drain Current Fig 3.O .On-Resistance Fig 5.Capacitance vs. Drain-Source Voltage Fig 2.Transfer Characteristics Fig 4.Source- Drain Diode Forward Voltage Fig 6.Gate Charge vs.Gate-Source Voltage 3/5 Steady, keep you advance WFU6N70 Fig 7.Breakdown Voltage vs.Temperature Fig 9. Max. Safe Operating Area Fig 8. On-Resistance vs.Temperature Fig 10 10..Max. Drain Current vs. Case Temperature Fig 11 11..Thermal Response 4/5 Steady, keep you advance WFU6N70 1 Pa cka ge Dim ension TO TO--25 251 Pac kage Dime 5/5 Steady, keep you advance