Silicon N-Channel MOSFET

WFU6N70
FET
Silicon N-Channel MOS
OSF
Features
■ 6A,700V, RDS(on)(Max 1.5Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 51nC)
■ High Current Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced
planar stripe, This latest technology has been especially designed to
minimize on-state resistance, have a high rugged avalanche
characteristics. This devices is specially well suited for high
efficiency switch mode power supply. electronic Lamp ballasts
based on half bridge and UPS.
Absolute Maximum Ratings
Symbol
Value
Units
700
V
6
A
Continuous Drain Current(@Tc=100℃)
3.8
A
IDM
Drain Current Pulsed tp=300us
24
A
V GS
Gate to Source Voltage-Continuous
±30
V
EAS
Single Pulsed Avalanche Energy
582
mJ
6
A
VDSS
Parameter
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
ID
(Note 2)
Is
Source Current (Body Diode)
PD
Total Power Dissipation(@Tc=25℃)
120
W
TJ, Tstg
Junction and Storage Temperature
-55~150
℃
260
℃
TL
Channel Temperature(1/8” from case for 10s)
Thermal Characteristics
Symbol
Parameter
R QJC
R QJA
Value
Min
Typ
Max
Thermal Resistance, Junction-to-Case
-
0.96
1.04
Thermal Resistance, Junction-to-Ambient
-
62.5
WT-F014-Rev.A0 Dec.2012
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
Units
℃/W
℃/W
WFU6N70
Electrical Characteristics (Tc = 25℃)
Characteristics
Gate leakage current
Gate−source breakdown voltage
Drain cut−off current
Symbol
IGSS
V(BR)GSS
IDSS
Drain−source breakdown voltage
V(BR)DSS
Break Voltage Temperature
ΔBV DSS /
Test Condition
Min
Type
Max
Unit
-
-
±100
nA
±30
-
-
V
-
-
10
μA
700
-
-
V
-
0.79
-
mV/℃
VGS = ±16 V, VDS = 0 V
IG = 250μA, VDS = 0 V
VDS=700V, VGS=0V, Tc = 25°°C
ID = 250 μA, VGS = 0 V
ID=250μA,Referenced to25℃
Coefficient
ΔTJ
Gate threshold voltage
VGS(th)
VDS = V GS, ID =250 μA
2
-
4
V
Drain−source ON resistance
RDS(ON)
VGS = 10 V, ID = 12A
-
-
1.5
Ω
Forward Transconductance
gfs
VDS = 50V, ID = 3A
-
4.12
-
S
Input capacitance
C iss
VDS = 25 V,
-
920
1200
Reverse transfer capacitance
C rss
VGS = 0 V,
-
45
55
Output capacitance
C oss
f = 1 MHz
-
100
115
tr
VDD =350
-
23
55
ID =6A
-
18
RG=11.5Ω
-
26
60
-
76
160
-
51
67
Rise time
Turn−on time
ton
Switching time
Fall time
Turn−off time
Total gate charge (gate−source
tf
toff
Qg
plus gate−drain)
ns
45
VDs =560V
nC
VGS =10V
Gate−source charge
Qgs
Gate−drain (“miller”) Charge
Qgd
pF
ID =6A
-
8.3
-
-
23.1
-
Source−Drain Ratings and Characteristics (Ta = 25℃)
Symbol
Test Condition
Min
Type
Max
Unit
Continuous drain reverse current
Characteristics
IDR
-
-
-
6
A
Pulse drain reverse current
IDRP
-
-
-
24
A
Forward voltage (diode)
VDSF
IDR = 6A, VGS = 0 V
-
1.5
V
Reverse recovery time
trr
IDR = 6A, V GS = 0 V,
-
440
-
ns
Reverse recovery charge
Qrr
dIDR / dt = 100 A / μs
-
4.05
-
μC
Note
-
1. Absolute maximum ratings are those values beyond which the device could be permanently
damaged.Absolute maximum ratings are stress ratings only and functional device operation is not
implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 30mH, IAS = 6A, VDD = 50V, RG = 27Ω, Starting TJ = 25°C
4. ISD ≤ 6A, di/dt ≤140A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
2/5
Steady, keep you advance
WFU6N70
RVES
TYPICAL PERFORMANCE CU
CUR
Fig 1.Output Characteristics
n-Resistance vs. Drain Current
Fig 3.O
.On-Resistance
Fig 5.Capacitance vs. Drain-Source Voltage
Fig 2.Transfer Characteristics
Fig 4.Source- Drain Diode Forward
Voltage
Fig 6.Gate Charge vs.Gate-Source Voltage
3/5
Steady, keep you advance
WFU6N70
Fig 7.Breakdown Voltage vs.Temperature
Fig 9. Max. Safe Operating Area
Fig 8. On-Resistance vs.Temperature
Fig 10
10..Max. Drain Current vs. Case
Temperature
Fig 11
11..Thermal Response
4/5
Steady, keep you advance
WFU6N70
1 Pa
cka
ge Dim
ension
TO
TO--25
251
Pac
kage
Dime
5/5
Steady, keep you advance