WFF640 on N-C hann el MOS FET Silic Silico N-Ch nnel MOSF Features ■ 18A,200V.RDS(on)(Max 0 . 1 8Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 16nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Isolation Voltage ( VISO = 4000V AC ) ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced Planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for G D low voltage applications such as automotive, high efficiency TO220F S switching for DC/DC converters, and DC motor control. Absolute Maximum Ratings Symbol VDSS ID Value Units Drain Source Voltage Parameter 200 V Continuous Drain Current(@Tc=25℃) 18* A 12* A 72* A ±30 V Continuous Drain Current(@Tc=100℃) IDM Drain Current Pulsed VGS Gate to Source Voltage (Note1) EAS Single Pulsed Avalanche Energy (Note 2) 258 mJ EAR Repetitive Avalanche Energy (Note 1) 13 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns Total Power Dissipation(@Tc=25℃) PD TJ, Tstg TL 44 W 0.35 W/℃ -55~150 ℃ 300 ℃ Derating Factor above 25℃ Junction and Storage Temperature Channel Temperature *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter Min Value Typ Max Units RQJC Thermal Resistance, Junction-to-Case - - 2.85 ℃/W RQCS Thermal Resistance, Case to Sink - 0.5 - ℃/W RQJA Thermal Resistance, Junction-to-Ambient - - 62.5 ℃/W Rev.A Jun.2010 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. WFF640 Electrical Characteristics (Tc = 25°C) Characteristics Gate leakage current Symbol Test Condition Min Type Max Unit IGSS VGS = ±30 V, VDS = 0 V - - ±100 nA V(BR)GSS IG = ±10 μA, VDS = 0 V ±30 - - V IDSS VDS = 200 V, VGS = 0 V - - 10 μA V(BR)DSS ID = 250 μA, VGS = 0 V 200 - - V Gate threshold voltage VGS(th) VDS = 10 V, ID =250 μA 2 - 4 V Drain−source ON resistance RDS(ON) VGS = 10 V, ID = 9A - - 0.18 Ω Forward Transconductance gfs VDS = 50 V, ID =9A 6.7 - - S Input capacitance Ciss VDS = 25 V, - 1300 1760 Reverse transfer capacitance Crss VGS = 0 V, - - 65 Output capacitance Coss f = 1 MHz - - 245 tr VDD =100 V, - 54 - ton ID = 18 A - 104 - tf RG=25 Ω - 327 - - 108 - - - 70 - 8 13 - 22 39 Gate−source breakdown voltage Drain cut−off current Drain−source breakdown voltage Rise time Turn−on time Switching time pF ns Fall time Turn−off time Total gate charge (gate−source plus gate−drain) (Note4,5) toff Qg VDD = 160 V, VGS = 10 V, Gate−source charge Qgs Gate−drain (“miller”) Charge Qgd ID = 18A (Note4,5) nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current IDR - - - 18 A Pulse drain reverse current IDRP - - - 72 A Forward voltage (diode) VDSF IDR = 18 A, VGS = 0 V - 1.4 1.5 V Reverse recovery time trr IDR = 18A, VGS = 0 V, - 195 - ns Reverse recovery charge Qrr dIDR / dt = 100 A / μs - 1.48 - μC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=18.5mH,IAS=18A,VDD=50V,RG=0Ω,Starting TJ=25℃ 3.ISD≤18A,di/dt≤300A/us, VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2% 5.Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution 2/7 Steady, keep you advance WFF640 Fig. 1 On-State Characteristics Fig.3 On-Resistance Variation vs Drain Current Fig.5 On-Resistance Variation vs Junction Temperature Fig.2 Transfer Characteristics Fig.4 Maximum Avalanche Energy vs On-State Current Fig.6 Gate Charge Characteristics 3/7 Steady, keep you advance WFF640 Fig.7 Maximum Safe Operation Area Fig.8 Maximum Drain Current vs Case Temperature Fig.9 Transient Thermal Response Curve 4/7 Steady, keep you advance WFF640 Fig.10 Gate Test Circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Unclamped Inductive Switching Test Circuit & Waveform 5/7 Steady, keep you advance WFF640 Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 Steady, keep you advance WFF640 TO-220F Package Dimension Unit: mm 7/7 Steady, keep you advance