K2611B Product Description Silicon N-Channel MOSFET Features D � 11A,900V, RDS(on)(Max1.10Ω)@VGS=10V � Ultra-low Gate charge(Typical 66nC) � Fast Switching Capability � 100%Avalanche Tested � Improved dv/dt capability � RoHS product G S General Description This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. Absolute Maximum Ratings Symbol VDSS Parameter Value Units Drain Source Voltage 900 V Continuous Drain Current(@Tc=25℃) 11 A Continuous Drain Current(@Tc=100℃) 6.9* A 44 A ±30 V ID IDM Drain Current Pulsed (Note1) VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy (Note2) 970 mJ IAR Avalanche Current (Note1) 11 A EAR Repetitive Avalanche Energy (Note1) 30.1 mJ dv/dt Peak Diode Recovery dv /dt (Note3) 4.1 V/ ns Total Power Dissipation(@Tc=25℃) 277 W Derating Factor above 25℃ 2.22 W/℃ TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ TL Channel Temperature 300 ℃ PD Thermal Characteristics Symbol Value Parameter Min Typ Max Units RQJC Thermal Resistance , Junction -to -Case - - 0.45 ℃/W RQJA Thermal Resistance , Junction-to -Ambient - - 40 ℃/W WT-F055-Rev.A1 Jan.2014 WINSEM I M ICROELECTRONICS WINSEM I M ICROELECTRONICS Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. WINSEM I M ICROELECTRONICS WINSEM I M ICROELECTRONICS WINSEM I M ICROELECTRONICS K2611B Product Description Silicon N-Channel MOSFET Electrical Characteristics(Tc=25℃) Characteristics Symbol Gate leakage current Gate-source breakdown voltage Drain cut -off current Test Condition Min Type Max Unit IGSS VGS=±30V,VDS=0V - - ±100 nA V(BR)GSS IG=±10 µA,VDS=0V ±30 - - V VDS=900V,VGS=0V - - 1 µA 10 µA IDSS VDS=720V,Tc=125℃ Drain -source breakdown voltage V(BR)DSS ID=250µA,VGS=0V 900 - - V Gate threshold voltage VGS(th) VDS=VGS,ID=250µA 3.0 - 5.0 V Drain -source ON resistance RDS(ON) VGS=10V,ID=5.5A - 0.90 1.10 Ω Forward Transconductance gfs VDS=40V,ID=5.5A - 9.5 - S Input capacitance Ciss VDS=25V, - 2550 3340 Reverse transfer capacitance Crss VGS=0V, - 22 30 Output capacitance Coss f=1MHz - 210 270 VDD=450V, - 130 280 ID=11A - 54 122 RG=25Ω - 80 181 - 125 304 - 66 80 - 13 - - 35 - Min Type Turn-on Rise time tr Turn-on Delay time td(on) pF Switching time ns Turn-on Fall time tf Turn-off Delay time (Note4,5) td(off) Total gate charge(gate-source VDD=720V, Qg plus gate-drain) VGS=10V, Gate-source charge Qgs Gate-drain("miller") Charge Qgd ID=11A (Note4,5) nC Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Symbol Test Condition Max Unit Continuous drain reverse current IDR - - - 11 A Pulse drain reverse current IDRP - - - 44 A Forward voltage(diode) VDSF IDR=11A,VGS=0V - - 1.4 V Reverse recovery time trr IDR=11A,VGS=0V, - 999 - ns Reverse recovery charge Qrr dIDR / dt =100 A / µs - 16.9 - µC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=15mH IAS=11A,VDD=50V,RG=25Ω,Starting TJ=25℃ 3.ISD≤11A,di/dt≤200A/us,VDD<BVDSS,Starting TJ=25℃ 4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2% 5. Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 2/8 K2611B Product Description Silicon N-Channel MOSFET VG S 15V 10V 9V 8V 7V 6 .5 V 6V 5 .5 V B o tto m 5 V 10 10 150。C I D[A] I D[ A] To p 2 5。C 1 Notes: 1.250us pulse test 2.Tc=25。C 1 Notes: 1.250us pulse test 2.VD S =40V 0 .1 1 10 2 4 6 8 10 V G S [V] VD S [ V] Fig.1 On Region Characteristics Fig.2 Transfer Characteristics 1 .4 1 .2 I DR[A] R DS (on)[ Ω ] 10 VG S =10V 150。C 1 1 .0 。 25 C VG S =20V Notes: 1.250us pulse test 2.V G S =0V 。 0 .8 N ote:T j = 25 C 0 2 4 5 6 10 12 14 16 18 20 0 .1 0 .2 0 .3 0 .4 0 .5 0 .6 0 .7 0 .8 1 .1 1.2 1.3 1.4 1.5 Fig.4 Body Diode Forward voltage Variation with Source Current And Temperature Fig.3 On-Resistance Variation vs Drain current and Gate Voltage 12 4500 Ciss=Cgs+Cgd(Cds=shorted) 4000 Coss=Cds+Cgd Cis s 3000 2500 2000 Co s s 1500 1000 Cr s s 500 0 1 0 -1 VD S =720V VD S =450V 10 Crss=Cgd V GS Gate Source Voltage[V] 3500 Capacitance[pF] 1 .0 V S D [V] ID [A] VD S =180V 8 6 4 2 *Note:ID =11A 0 100 0 101 10 VD S Drain-Source Voltage[V] M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 20 30 40 50 60 70 Qg Toltal Gate Charge[nC] Fig.5 Capacitance Characteristics WIN SEM I 0 .9 WIN SEM I Fig.6 Gate Charge Characteristics M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 3/8 K2611B Product Description Silicon N-Channel MOSFET 1 .2 4 .0 1 .1 3 .0 R DS(on)(Normalized) BV D S (Normalized) 3 .5 1 .0 0 .9 2 .5 2 .0 1 .5 1 .0 Notes: 1.V G S =0V 2.I D =250uA 0 .8 -7 5 -5 0 -2 5 25 0 50 。 Tj [ C ] 100 75 125 Notes: 1.V G S =10V 2.I D =5.5A 0 .5 0 .0 -7 5 150 -5 0 -2 5 Fig.7 Breakdown Voltage Variation vs.Temperature 25 0 50 。 Tj [ C ] 75 100 125 150 Fig.8 On-Resistance Variation vs.Temperature 12 Operation on This Area is limited by RDS (ON) 10 I D D rain C urrent[A] I D DrainCurrent[A] 10 2 10µs 100µ s 101 1m s 10ms 100ms 100 8 6 4 DC Note: 1.T C =25 。 C 。 2.T C =150 C 3.Single Pulse 1 0 -1 100 2 102 101 VD S Drain-SourceVoltage[V] 0 25 103 50 75 100 。 TC Case Temperature[ C ] 125 150 Fig.10 Maximum Drain Current vs Case temperature Fig.9 Maximum Safe Operation Area ZθJC(t),Thermal Response 1 D = 0. 5 0. 2 0 .1 0. 1 *Notes: 。 1.ZθJ C (t)=0.45 C/W Max. 2.Duty Factor,D=t1/t2 3.T JM -T C =PDM * ZθJ C (t) 0. 05 0. 02 0. 01 PD M 0 .0 1 t1 t2 Single pulse 1 E -5 1 E -4 1 E -3 0 .0 1 0 .1 1 10 t 1 Square Wave Pulse Duration[sec] Fig.11 Transient thermal Response Curve WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 4/8 K2611B Product Description Silicon N-Channel MOSFET 50K Ω 12V VG S Same type as D U T Qg 200nF 10V 300nF VD S VG S Qg s Qg d DUT 3m A Ch a rg e Fig.12 Gate Test circuit & Waveform VD S RG RL VD S 90% VD D VG S VG S DUT 10V 10% td(on) tr td(off) to n tf to f f Fig.13 Resistive Switching Test Circuit & Waveform L EA S = VD S B V DSS B V D S S - VD D B V DSS IA S ID RG VD D DUT 10V 1 L IA S 2 2 I D( t) VD S( t ) VD D tp tp Tim e Fig.14 Unclamped Inductive Switching Test Circuit & Waveform WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 5/8 K2611B Product Description Silicon N-Channel MOSFET DUT VD S IS D L Driver RG S am e Type as DUT VG S VD D dv/dt controlled by RG IS D conteolled by pulse period VG S Gate Pulse Width Gate Pulse Period D = (Driver) 10V IF M ,Body Diode Forward Current IS D di/dt (DUT) IR M Body Diode Reverse Current VD S (DUT) Body Diode Recovery dv/dt VD D VS D Body Diode Forward Voltage Drop Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 6/8 K2611B Product Description Silicon N-Channel MOSFET TO-3PB Package Dimension U n it:m m E A ФP 符 号 symbol L2 D Q F M in M ax A 4. 60 5. 00 B 2. 90 3. 20 B1 1. 90 2. 20 b 0. 90 1. 10 c 0. 50 0. 70 D 19. 40 20. 40 E 15. 40 15. 80 5 . 45(TYP ) e B1 L B e WIN SEM I b M ICROELECTRON ICS www.winsemi.com WIN SEM I Q1 M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I c M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I F 1. 40 1. 60 L 19. 50 20. 50 L2 3. 30 3. 70 Q 4. 90 5. 10 Q1 1 .3 0 1. 50 P 3. 10 3. 50 M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 7/8 K2611B Product Description Silicon N-Channel MOSFET NOTE: 1.We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don't be hesitate to contact us. 2.Please do not exceed the absolute maximum ratings of the device when circuit designing. 3.Winsemi Microelectronics Co., Ltd reserved the right to make changes in this specification sheet and is subject to change without prior notice. CONTACT: Winsemi Microelectronics Co., Ltd. ADD:Futian District, ShenZhen Tian An Cyber Tech Plaza two East Wing 1002 Post Code : 518040 Tel : +86-755-8250 6288 FAX : +86-755-8250 6299 Web Site : www.winsemi.com WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 8/8