WFP840 Silicon N-Channel MOSFET Features ■ 8A,500V,RDS(on)(Max 0.8Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 59nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi ’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a Electronic lamp ballast. Absolute Maximum Ratings Symbol VDSS Parameter Value Units 500 V Continuous Drain Current(@Tc=25℃) 8 A Continuous Drain Current(@Tc=100℃) 5.1 A 32 A ±30 V 320 mJ Drain Source Voltage ID IDM Drain Current Pulsed (Note1) VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy EAR Repetitive Avalanche Energy (Note 1) 13.4 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 3.5 V/ns Total Power Dissipation(@Tc=25℃) 134 W Derating Factor above 25℃ 1.0 W/℃ -55~150 ℃ 300 ℃ (Note 2) PD TJ, Tstg TL Junction and Storage Temperature Channel Temperature *Drain current limited by junction temperature Thermal Characteristics Value Symbol Parameter Units Min Typ Max RQJC Thermal Resistance, Junction-to-Case - - 0.93 ℃/W RQCS Thermal Resistance, Case-to-Sink - 0.5 - ℃/W RQJA Thermal Resistance, Junction-to-Ambient - - 62 ℃/W 1/7 Rev.A Nov.2010 Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved WFP840 C) Electrical Characteristics (Tc = 25 25°C) Characteristics Symbol Test Condition Min Type Max Unit IGSS VGS = ±30 V, VDS = 0 V - - ±100 nA V(BR)GSS IG = ±10 μA, VDS = 0 V ±30 - - V IDSS VDS = 400 V, VGS = 0 V - - 10 μA Drain−source breakdown voltage V(BR)DSS ID = 250 μA, VGS = 0 V 500 - - V Break Voltage Temperature ΔBVDSS/ ID=250μA, - 0.5 - Gate leakage current Gate−source breakdown voltage Drain cut−off current Coefficient ΔTJ Referenced to V/℃ 25℃ Gate threshold voltage VGS(th) VDS = 10 V, ID =250 μA 2 - 4 V Drain−source ON resistance RDS(ON) VGS = 10 V, ID = 4.0A - - 0.80 Ω Forward Transconductance gfs VDS = 40 V, ID = 4.0A - 7.3 - S Input capacitance Ciss VDS = 25 V, - 1400 Reverse transfer capacitance Crss VGS = 0 V, - 145 190 Output capacitance Coss f = 1 MHz - 35 45 VDD =250 V, - 22 55 ID =8A - 65 140 tf RG=9.1Ω - 125 260 toff RD=31Ω - 75 160 - 59 70 Rise time Turn−on time tr ton 1800 pF ns Switching time Fall time Turn−off time Total gate charge (gate−source (Note4,5) VDD = 400 V, Qg plus gate−drain) nC VGS = 10 V, Gate−source charge Qgs Gate−drain (“miller”) Charge Qgd ID = 8 A (Note4,5) - 7 9 - 28 32 −Drain Ratings and Characteristics (Ta = 25 C) Source Source− 25°C) Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current IDR - - - 8 A Pulse drain reverse current IDRP - - - 32 A Forward voltage (diode) VDSF IDR = 8 A, VGS = 0 V - - 1.4 V Reverse recovery time trr IDR = 8 A, VGS = 0 V, - 390 - ns Reverse recovery charge Qrr dIDR / dt = 100 A / μs - 4.2 - μC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=9mH,IAS=8A,VDD=50V,RG=25Ω,Starting TJ=25℃ 3.ISD≤8A,di/dt≤300A/us, VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2% 5.Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution 2 /7 Steady, all for your advance WFP840 3 /7 Steady, all for your advance WFP840 4 /7 Steady, all for your advance WFP840 Fig.10 Gate Test Circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Unclamped Inductive Switching Test Circuit & Waveform 5 /7 Steady, all for your advance WFP840 Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6 /7 Steady, all for your advance WFP840 TO-220C Package Dimension Unit: mm 7 /7 Steady, all for your advance