SFF2N60
Silicon N-Channel MOSFET
Features
■2A,600V, RDS(on)(Max 4.7Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 9.0nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance , have a high
rugged avalanche characteristics. This devices is specially well
suited for high efficiency switch mode power supply.
Absolute Maximum Ratings
Symbol
Parameter
Value
Units
VDSS
Drain Source Voltage
600
V
ID
Continuous Drain Current(@TC=25℃)
2.0*
A
Continuous Drain Current(@TC=100℃)
1.5*
A
9.5*
A
±30
V
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
SinglePulsed Avalanche Energy
(Note2)
140
mJ
EAR
Repetitive Avalanche Energy
(Note1)
2.8
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note3)
4.5
V/ns
PD
Total Power Dissipation(@TC=25℃)
23
W
0.18
W/℃
-55~150
℃
300
℃
Derating Factor above25℃
TJ,Tstg
Junction and Storage Temperature
TL
Channel Temperature
*Drain current limited by junction temperature
Thermal Characteristics
Symbol
Parameter
Min
Value
Typ
Max
Units
RQJC
Thermal Resistance, Junction-to-Case
-
-
5.5
℃/W
RQJA
Thermal Resistance, Junction-to-Ambient
-
-
62.5
℃/W
Rev.A Aug.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
SFF2N60
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Type
Max
Unite
VGS=±30V,VDS=0V
-
-
±100
nA
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
VDS=600V,VGS=0V
-
-
10
µA
VDS=480V,TC=125℃
-
-
100
µA
Drain cut-off current
Drain-source breakdown voltage
Min
IGSS
Gate leakage current
Gate-source breakdown voltage
Test Condition
IDSS
V(BR)DSS
ID=250 µA,VGS=0V
600
-
-
V
Gate threshold voltage
VGS(th)
VDS=10V,ID=250 µA
2
-
4
V
Drain-source ON resistance
RDS(ON)
VGS=10V,ID=0.8A
-
3.8
4.7
Ω
Forward trans conductance
gfs
VDS=50V,ID=0.8A
-
2.0
-
S
Input capacitance
Ciss
-
270
350
-
40
50
-
5
7
-
10
30
-
25
60
-
20
50
-
25
60
-
9.0
11
-
1.6
-
-
4.3
-
Reverse transfer capacitance
Crss
Output capacitance
Coss
Rise time
tr
Turn-on time
ton
Fall time
tf
Turn-off time
toff
Total gate charge(gate-source
plus gate-drain)
Qg
Gate-source charge
Qgs
Gate-drain("miller")Charge
Qgd
Switching time
VDS=25V,
VGS=0V,
f=1MHz
VDD=300V,
ID=2.4A
RG=25Ω
(Note4,5)
VDD=320V,
VGS=10V,
ID=6.5A
pF
ns
nC
(Note4,5)
Source-Drain Ratings and Characteristics（Ta=25℃)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Continuous drain reverse current
IDR
-
-
-
2
A
Pulse drain reverse current
IDRP
-
-
-
9.5
A
Forward voltage(diode)
VDSF
IDR=2A,VGS=0V
-
-
1.4
V
Reverse recovery time
trr
IDR=2A,VGS=0V,
-
180
-
ns
dIDR/dt=100A / µs
-
0.72
-
µC
Reverse recovery charge
Qtrr
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=18.5mH,IAS=2A,VDD=50V,RG=0Ω,Starting TJ=25℃
3. ISD≤2A,di/dt≤200A/us, VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
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SFF2N60
Fig.1On-State Characteristics
Fig.2 Transfer Current Characteristics
Fig.3 On-Resistance Variation vs
Fig.4 Body Diode Forward Voltage
Drain Current
Variation with Source Current
And Temperature
Fig.5 On-Resistance Variation vs
Fig.6 Gate Charge Characteristics
Junction Temperature
3/7
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SFF2N60
Fig.7 Maximum Safe Operation
Fig.8 Maximum Drain Current vs
Area
Case Temperature
Fig.9 Transient Thermal Response Curve
4/7
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SFF2N60
Fig.10 Gate Test Circuit & Waveform
Fig.11 Resistive Switching Test Circuit & Waveform
Fig.12 Unclamped Inductive Switching Test Circuit & Waveform
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SFF2N60
Fig.13 Peak Diode Recovery dv/dt Test Circuit &Waveform
6/7
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SFF2N60
TO-220F Package Dimension
Unit :mm
7/7
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