SPP9972 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP9972 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. The SPP9972 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS Power Management in Note book Powered System DC/DC Converter Load Switch FEATURES -60V/-18A,RDS(ON)= 25mΩ@VGS=- 10V -60V/- 12A,RDS(ON)= 33mΩ@VGS=- 4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-252 package design PIN CONFIGURATION TO-252 PART MARKING 2013/07/05 Ver.1 Page 1 SPP9972 P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description 1 G Gate 2 S Source 3 D Drain ORDERING INFORMATION Part Number Package Part SPP9972T252RGB TO-252 ※ SPP9972T252RGB : Tape Reel ; Pb – Free ; Halogen - Free Marking SPP9972 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -60 V Gate –Source Voltage VGSS ±20 V Continuous Drain Current(TJ=150℃) TA=25℃ TA=100℃ ID -35 -27 A Pulsed Drain Current IDM -70 A Single Pulse Avalanche Energy EAS 162 mJ PD 52 W TJ -55/150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJC 2.4 ℃/W Power Dissipation Operating Junction Temperature 2013/07/05 Ver.1 TA=25℃ Page 2 SPP9972 P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS=0V,ID=-250uA VGS(th) VDS=VGS,ID=-250uA Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) V VDS=0V,VGS=±20V VDS=-48V,VGS=0V VDS=-48V,VGS=0V TJ=55℃ ±100 -1 nA VDS= -0V,VGS =-0V -35 A 0.025 0.033 Ω Forward Transconductance gfs Diode Forward Voltage VSD IS=-1A,VGS =0V RDS(on) V -2.5 VGS=-10V,ID= -18A VGS=-4.5V,ID= -12A VDS=-10V,ID=-18A Drain-Source On-Resistance -60 -1 -5 0.02 0.026 23 uA S -1 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Time Turn-Off Time 2013/07/05 Ver.1 VDS=-20V,VGS=-4.5V ID= -12A VDS=-15V,VGS=0V f=1MHz td(off) tf 6.7 nC 5.5 3635 pF 225 140 38 td(on) tr 25 VDD=-15V,ID=-1A, VGEN=-10V, RG=3.3Ω 24 nS 100 7 Page 3 SPP9972 P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Fig 1. Output Characteristic Fig 2. On Resistance vs Gate Source Voltage Fig 3. Source-Drain Diode Forward Voltage Fig 4. Capacitance Fig 5. Gate Charge Fig. 6 On Resistance vs Junction Temperature 2013/07/05 Ver.1 Page 4 SPP9972 P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Fig. 7 Threshold Voltage vs Temperature Fig. 8 Save Operating Rnage Fig 9. Switching Time Waveform Fig. 10 Unclamped Inductive Waveform Fig 11. Maximum Transient Thermal Impedance 2013/07/05 Ver.1 Page 5 SPP9972 P-Channel Enhancement Mode MOSFET TO-252 PACKAGE OUTLINE 2013/07/05 Ver.1 Page 6 SPP9972 P-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2013 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2013/07/05 Ver.1 Page 7