SPN30T10 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN30T10 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. SPN30T10 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS High Frequency Small Power System DC/DC Converter Load Switch FEATURES 100V/20A, RDS(ON)=50mΩ@VGS= 10V High density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-252 package design PIN CONFIGURATION TO-252 PART MARKING SPN30T10 AAAAAA BBBBBB 2012/05/30 Ver.2 Page 1 SPN30T10 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description 1 G Gate 2 S Source 3 D Drain Package Part Marking ORDERING INFORMATION Part Number SPN30T10T252RGB TO-252 ※ SPN30T10T252RGB : Tape Reel ; Pb – Free ; Halogen - Free SPN30T10 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 100 V Gate –Source Voltage VGSS ±20 V Continuous Drain Current(TJ=150℃) TC=25℃ TC=70℃ ID 22 16 A Pulsed Drain Current IDM 45 A Avalanche Current IAS 27 A Power Dissipation @ TA=25℃ PD 52 W Operating Junction Temperature TJ 150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 62 ℃/W 2012/05/30 Ver.2 Page 2 SPN30T10 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. V(BR)DSS VGS=0V,ID=250uA 100 Typ Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage VGS(th) VDS=VGS,ID=250uA Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Drain-Source On-Resistance RDS(on) 1 VDS=0V,VGS=±20V VDS=80V,VGS=0V VDS=80V,VGS=0V TJ=125℃ VDS≥5V,VGS =10V V 2.5 ±100 10 nA uA 100 22 A VGS= 10V,ID=20A 45 mΩ VGS= 4.5V,ID=15A 50 mΩ Forward Transconductance gfs VDS=5V,ID=3A Diode Forward Voltage VSD IS=1A,VGS =0V 68 S 1.2 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Time 2012/05/30 Ver.2 td(off) tf nC 7.5 7 3850 VDS=15V, VGS=0V f=1MHz pF 137 82 td(on) tr Turn-Off Time 55 VDS=15V, VGS=4.5V ID= 15A 19 VDD=50V, ID=1A, VGEN=10V RG=3.3Ω 4 nS 84 5 Page 3 SPN30T10 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Fig. 1 Typical Output Characteristics Fig. 2 On-Resistance vs. Gate Voltage Fig. 3 Forward Characteristics of Reverse Diodes Fig. 4 Gate Charge Characteristics Fig. Vgs vs. Junction Temperature Fig. 6 On-resistance vs. Junction Temperature 2012/05/30 Ver.2 Page 4 SPN30T10 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Fig. 7 Typical Capacitance Characteristics Fig. 8 Maximum Safe Operation Area Fig. 9 Effective Transient Thermal Impedance Fig. 10 Switching Time Waveform 2012/05/30 Ver.2 Fig. 11 Unclamped Inductive Waveform Page 5 SPN30T10 N-Channel Enhancement Mode MOSFET TO-252 PACKAGE OUTLINE 2012/05/30 Ver.2 Page 6 SPN30T10 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2011 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2012/05/30 Ver.2 Page 7