Formosa MS

Formosa MS
SMD Switching Diode Array
BAS21T
List
List................................................................................................. 1
Package outline............................................................................... 2
Features.......................................................................................... 2
Mechanical data............................................................................... 2
Maximum ratings ............................................................................. 2
Rating and characteristic curves........................................................ 3
Pinning information........................................................................... 4
Marking........................................................................................... 4
Suggested solder pad layout............................................................. 4
Packing information.......................................................................... 5
Reel packing.................................................................................... 5
Suggested thermal profiles for soldering processes............................. 6
High reliability test capabilities...........................................................7
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TEL:886-2-22696661
FAX:886-2-22696141
Page 1
Document ID
Issued Date
DS-221948
2009/08/10
Revised Date
-
Revision
Page.
A
7
Formosa MS
SMD Switching Diode
BAS21T
150mW Surface Mount
Switching Diode Array - 200V
Package outline
Features
(B)
0.006 (0.15)
0.012 (0.30)
.044(1.10)
Mechanical data
.036(0.90)
0.068 (1.70)
• Fast speed switching.
• For general purpose switching application.
• High conductance.
• Silicon epitaxial planar chip.
• Suffix "-H" indicates Halogen-free part, ex.BAS21T-H.
• Lead-free parts meet RoHS requirments.
0.060 (1.50)
0.020 (0.50)Max
SOT-523
(C)
(A)
0.034 (0.85)
0.004 (0.10)Min.
0.030 (0.75)
0.070 (1.75)
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, SOT-523
• Terminals : Solder plated, solderable per
0.032 (0.80)
MIL-STD-750, Method 2026
0.004 (0.10)
0.008(0.20)
0.058 (1.45)
0.024 (0.60)
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.003 gram
Dimensions in inches and (millimeters)
Maximum ratings (AT T =25 C unless otherwise noted)
o
A
PARAMETER
Symbol
Value
UNIT
VR
200
V
Average Rectified Current
IO
200
mA
Forward Continuous Current
I FM
400
mA
DC Reverse Voltage
Non-Repetitive Peak Forward Surge Current
@ t = 1.0us
@ t = 1.0 s
Repetitive Peak Forward Surge Current
2.5
I FSM
I FRM
Thermal Resistance Junction to Ambient
R èJA
A
0.5
625
mA
O
833
C/W
Total Device Dissipation
PD
Operating Temperature Range
Tj
-55 ~ +150
o
C
Storage Temperature Range
T STG
-65 ~ +175
o
C
mW
150
V BR
250
V
IR
0.1
15
uA
Diode Capacitance,VR = 0V, f = 1.0MHz
CT
5.0
pF
Reverse Recovery Time
T rr
50
nS
Reverse Breakdown Voltage, IBR = 100µA
Reverse Voltage Leakage Current
O
at T J =25 C
at TJ =100 OC
IF = IR = 10mA, RL = 50Ù
Forward Voltage
at IF = 100mAdc
at IF = 200mAdc
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Page 2
1000
VF
mV
1250
Document ID
Issued Date
DS-221948
2009/08/10
Revised Date
-
Revision
Page.
A
7
Rating and characteristic curves for each diode(BAS21T)
FIG.1-TYPICAL FORWARD CHARACTERISTICS
FIG.2-TYPICAL REVERSE CHARACTERISTICS
1
100
IR, INSTANTANEOUS RVERSE CURRENT,(uA)
IF, INSTANTANEOUS FORWARD CURRENT,(A)
TA = 150OC
0.1
TA = -40OC
TA = 0OC
0.01
TA = 25OC
TA = 75OC
TA = 125OC
10
TA = 125OC
1
TA = 75OC
0.1
TA = 25OC
0.01
TA = 0OC
0.001
TA = -40OC
TA = 150OC
0.001
0.0001
0
.2
.4
.6
.8
1.0
1.2
1.4
0
50
100
150
200
250
VF,INSTANTANOUS FORWARD VOLTAGE,(V)
VR,INSTANTANOUS REVERSE VOLTAGE,(V)
FIG.3-TYPICAL CAPACITANCE VS REVERSE VOLTAGE
FIG.4-POWER DERATING CURVE, TOTAL PACKAGE
4.0
200
3.5
f = 1MHz
Pd, POWER DISSIPATION,(mW)
CT, TOTAL CAPALCAPACITANCE,(pF)
3.0
2.5
2.0
1.5
1.0
150
100
50
0.5
0
0
0
10
20
30
40
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0
100
200
TA, AMBIENT TEMPERATURE, (OC)
VR, REVERSE VOLTAGE,(V)
Page 3
Document ID
Issued Date
DS-221948
2009/08/10
Revised Date
-
Revision
Page.
A
7
Formosa MS
SMD Switching Diode
BAS21T
Pinning information
Type number
Symbol
Marking code
A
BAS21T
B
T3
C
Suggested solder pad layout
SOT-523
0.02(0.50)
0.02(0.50)
0.056(1.40)
0.02(0.50)
0.02(0.50)
Dimensions in inches and (millimeters)
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Page 4
Document ID
Issued Date
DS-221948
2009/08/10
Revised Date
-
Revision
Page.
A
7
Formosa MS
SMD Switching Diode
BAS21T
Packing information
P0
P1
d
E
F
B
A
W
P
D2
D1
T
C
W1
D
unit:mm
Item
Symbol
Tolerance
SOT-523
Carrier width
Carrier length
Carrier depth
Sprocket hole
13" Reel outside diameter
13" Reel inner diameter
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
A
B
C
d
D
D1
D
D1
D2
E
F
P
P0
P1
T
W
W1
0.1
0.1
0.1
0.1
2.0
min
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
1.73
1.85
0.90
1.5
178.00
60.00
13.00
1.75
3.50
4.00
4.00
2.00
0.23
8.00
11.40
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
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Page 5
Document ID
Issued Date
DS-221948
2009/08/10
Revised Date
-
Revision
Page.
A
7
Formosa MS
SMD Switching Diode
BAS21T
Reel packing
PACKAGE
REEL SIZE
SOT-523
7"
REEL
(pcs)
COMPONENT
SPACING
(m/m)
BOX
(pcs)
INNER
BOX
(m/m)
REEL
DIA,
(m/m)
3,000
4.0
30,000
183*183*123
178
CARTON
SIZE
(m/m)
382*262*387
CARTON
(pcs)
APPROX.
GROSS WEIGHT
(kg)
240,000
9.5
Suggested thermal profiles for soldering processes
1.Storage environment: Temperature=10 oC~35 oC Humidity=65%±15%
2.Reflow soldering of surface-mount devices
Critical Zone
T L to T P
tt P
TP
Ramp-up
TL
tt L
Temperature
T smax
T smin
TS
tt s
Preheat
25
Ramp-down
T t25 oC to Peak
Wave Soldering
IR Reflow
Time
3.Flow (wave)soldering (solder dipping)
Profile Feature
Soldering Condition
Average ramp-up rate(T L to TP )
<3oC/sec
Preheat
-Temperature Min(Tsmin)
-Temperature Max(Tsmax)
-Time(min to max)(t s )
100oC
150oC
60~120sec
Tsmax to TL
-Ramp-upRate
<3oC/sec
Time maintained above:
-Temperature(TL )
-Time(tL )
183oC
60~150sec
255oC-0/+5 oC
Peak Temperature(T P )
Time within 5 oC of actual Peak
Temperature(tP )
10~30sec
Ramp-down Rate
<6 oC/sec
Time 25
<6minutes
to Peak Temperature
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Page 6
Document ID
Issued Date
DS-221948
2009/08/10
Revised Date
-
Revision
Page.
A
7
Formosa MS
SMD Switching Diode
BAS21T
High reliability test capabilities
Item Test
Conditions
Reference
O
1. Solder Resistance
at 260±5 C for 10±2sec.
immerse body into solder 1/16"±1/32"
MIL-STD-750D
METHOD-2031
2. Solderability
at 245±5 OC for 5 sec.
MIL-STD-202F
METHOD-208
3. High Temperature Reverse Bias
V R=80% rate at T A=150 OC for 168 hrs.
MIL-STD-750D
METHOD-1026
4. Forward Operation Life
Rated average rectifier current at T=25 OC for 500hrs.
MIL-STD-750D
METHOD-1027
T A = 25 OC, I F = I O
On state: power on for 5 min.
off state: power off for 5 min.
on and off for 500 cycles.
MIL-STD-750D
METHOD-1036
5. Intermittent Operation Life
6. Pressure Cooker
15P SIG at TA=121 OC for 4 hrs.
7. Temperature Cycling
-55 OC to +125OC dwelled for 30 min.
and transferred for 5min. total 10 cycles.
8. Thermal Shock
9. Forward Surge
10. Humidity
11. High Temperature Storage Life
12. Solvent Resistance
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MIL-STD-750D
METHOD-1051
MIL-STD-750D
METHOD-1056
0 OC for 5 min. rise to 100 OC for 5 min. total 10 cycles.
MIL-STD-750D
METHOD-4066-2
8.3ms single half sine-wave superimposed
on rated load, one surge.
at TA=65 OC, RH=98% for 1000hrs.
MIL-STD-750D
METHOD-1038
at 175OC for 1000 hrs.
MIL-STD-750D
METHOD-1031
Dip into Freon at 25OC for 1 min.
MIL-STD-202F
METHOD-215
Page 7
Document ID
Issued Date
DS-221948
2009/08/10
Revised Date
-
Revision
Page.
A
7