MUR15120 ® Pb MUR15120 Pb Free Plating Product 15 Ampere,1200 Volt SwitchMode Single Fast Recovery Epitaxial Diode TO-220AC/TO-220C-2P APPLICATION · · · · · · · Cathode(Bottom Side Metal Heatsink) Freewheeling, Snubber, Clamp Inversion Welder PFC Plating Power Supply Ultrasonic Cleaner and Welder Converter & Chopper UPS Anode PRODUCT FEATURE · Ultrafast Recovery Time Internal Configuration Cathode · Soft Recovery Characteristics Base Backside · Low Recovery Loss · Low Forward Voltage · High Surge Current Capability · Low Leakage Current GENERAL DESCRIPTION MUR15120 using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic. ABSOLUTE MAXIMUM RATINGS T C =25°C unless otherwise specified Symbol Parameter/Test Conditions Values VR Maximum D.C. Reverse Voltage VRRM Maximum Repetitive Reverse Voltage IF(AV) Average Forward Current TC=100℃ IF(RMS) RMS Forward Current TC=100℃ IFSM Non Repetitive Surge Forward Current TJ=45℃,t=10ms, 50Hz, Sine Unit 1200 V 15 21 A 150 PD Power Dissipation 125 W TJ Junction Temperature -55 to +150 ℃ TSTG Storage Temperature Range -55 to +125 ℃ Torque RthJC Module to Sink Recommended（M3） Junction to Case Thermal Resistance Weight 1.1 Nm 1.0 ℃ /W 2.5 g ELECTRICAL CHARACTERISTICS T C =25°C unless otherwise specified Symbol Parameter/Test Conditions Min. Typ. Max. Unit IRM Maximum Reverse Leakage Current VR =1200V VR =1200V, TJ = 125℃ VF Forward Voltage 10 μA 1 mA IF=15A 2.8 3.2 IF=15A,TJ=125℃ 30 ns 40 ns trr Reverse Recovery Time (IF = 1A, dIF/dt = -200A/μs, VR = 30V) 2.3 25 trr Reverse Recovery Time (IF = 0.5A, IR=1A, IRR = 0.25A) 35 trr IRRM Reverse Recovery Time trr IRRM V IF =15A,VR =600V, 72 Maximum Reverse Recovery Current dIF/dt = -200A/μs 5 A Reverse Recovery Time IF = 15A,VR =600V, Maximum Reverse Recovery Current dIF/dt = -200A/μs ,TJ=125℃ 240 7.5 ns Rev.05 © 2006 Thinki Semiconductor Co.,Ltd. ns A Page 1/3 http://www.thinkisemi.com/ MUR15120 ® 500 30 25℃ 25℃ 25 400 125℃ trr (ns) IF(A) 20 15 10 125℃ 300 200 100 5 0 0 0 1 2 3 4 100 5 VF(V) 300 400 500 dIF/dt(A/μs) Figure 2. Reverse Recovery Time vs dIF/dt Figure 1. Forward Voltage Drop vs Forward Current 2000 15 25℃ 25℃ 125℃ 1600 QRRM(nc) 12 IRRM(A) 200 9 6 125℃ 1200 800 400 3 0 0 100 200 300 400 100 500 200 300 400 500 dIF/dt(A/μs) dIF/dt(A/μs) Figure 3. Reverse Recovery Current vs dIF/dt Figure 4. Reverse Recovery Charge vs dIF/dt 20 10 ZthJC (K/W) 15 IF(A) DC 10 1 0.1 5 0 0.01 25 50 75 100 125 150 175 TC(℃) Figure 5.Forward current vs Case temperature Rev.05 © 2006 Thinki Semiconductor Co.,Ltd. 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (s) Figure 6.Transient Thermal Impedance Page 2/3 http://www.thinkisemi.com/ MUR15120 ® Figure 7. Diode Reverse Recovery Test Circuit and Waveform Dimensions in (mm) Figure 8. Package Outline Rev.05 © 2006 Thinki Semiconductor Co.,Ltd. Page 3/3 http://www.thinkisemi.com/