TSU45N60 ® Pb TSU45N60 Pb Free Plating Product 45A,60V Typical N-Channel Trench Power MOSFET General Description The TSU45N60 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM. Features ● VDS=60V；ID=45A@ VGS=10V； RDS(ON)<14 mΩ @ VGS=10V ● Ultra Low On-Resistance G D S TO-251 Top View ● High UIS and UIS 100% Test Application Schematic Diagram VDSS = 60 V ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply IDSS = 45 A RDS(ON) = 11 mΩ ● Inverter/Amplifier Application ● Motor Control Application Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter Value Unit VDS Drain-Source Voltage (VGS=0V) 60 V VGS Gate-Source Voltage (VDS=0V) ±25 V ID (DC) Drain Current (DC) at Tc=25℃ 45 A ID (DC) Drain Current (DC) at Tc=100℃ 32 A 180 A 55 W 182 mJ -55 To 175 ℃ IDM (pluse) Drain Current-Continuous@ Current-Pulsed PD Maximum Power Dissipation(Tc=25℃) EAS Single Pulse Avalanche Energy TJ,TSTG (Note 1) (Note 2) Operating Junction and Storage Temperature Range Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature 2.EAS condition:TJ=25℃,VDD=30V,VG=10V, RG=25Ω Rev.05 © 2006 Thinki Semiconductor Co., Ltd. Page 1/5 http://www.thinkisemi.com/ TSU45N60 ® Table 2. Thermal Characteristic Symbol RJC Parameter Thermal Resistance,Junction-to-Case Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Conditions Min Value Unit 2.7 ℃/W Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA 60 V IDSS Zero Gate Voltage Drain Current(Tc=25℃) VDS=60V,VGS=0V 1 μA IDSS Zero Gate Voltage Drain Current(Tc=100℃) VDS=60V,VGS=0V 5 μA IGSS Gate-Body Leakage Current VGS=±25V,VDS=0V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA 4 V RDS(ON) Drain-Source On-State Resistance 14 mΩ 2 VGS=10V, ID=40A 11 Dynamic Characteristics gFS Forward Transconductance Ciss Input Capacitance Coss Output Capacitance Crss VDS=10V,ID=15A 18 S 1659 PF 276 PF Reverse Transfer Capacitance 128 PF Qg Total Gate Charge 37.6 nC Qgs Gate-Source Charge 6.7 nC Qgd Gate-Drain Charge 10 nC 6 nS 6.9 nS 12.5 nS 14.8 nS VDS=25V,VGS=0V f=1.0MHz VDS=30V,ID=15A VGS=10V Switching Times td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) tf VDS=30V,RL=2.5Ω VGS=10V,RG=3Ω Turn-Off Delay Time Turn-Off Fall Time Source-Drain Diode Characteristics ISD Source-Drain Current(Body Diode) 45 A ISDM Pulsed Source-Drain Current(Body Diode) 180 A VSD Forward On Voltage trr (Note 1) TJ=25℃,ISD=1A,VGS=0V 0.74 TJ=25℃,IF=15A di/dt=100A/μs 27 nS 30 nC (Note 1) Reverse Recovery Time (Note 1) Qrr Reverse Recovery Charge ton Forward Turn-on Time 1 V Intrinsic turn-on time is negligible(turn-on is dominated by LS+LD) Notes 1.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.5%, Starting TJ=25℃ Rev.05 © 2006 Thinki Semiconductor Co., Ltd. Page 2/5 http://www.thinkisemi.com/ TSU45N60 ® Test Circuit 1) EAS Test Circuits 2) Gate Charge Test Circuit: 3) Switch Time Test Circuit： Rev.05 © 2006 Thinki Semiconductor Co., Ltd. Page 3/5 http://www.thinkisemi.com/ TSU45N60 ® TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves) Figure1. Safe Operating Area Figure2. Source-Drain Diode Forward Voltage ID (A) 10us 1ms 10ms DC VDS (Volts) Figure3. Output Characteristics Figure6. RDS(ON) vs Junction Temperature RDS(ON) (mΩ) Figure5. Static Drain-Source On Resistance Figure4. Transfer Characteristics ID (A) Rev.05 © 2006 Thinki Semiconductor Co., Ltd. Page 4/5 http://www.thinkisemi.com/ TSU45N60 ® Figure7. BVDSS vs Junction Temperature Figure8. VGS(th) vs Junction Temperature Temperature（℃） Temperature（℃） Temperature（℃） Figure10. Capacitance VGS (Volts) C Capacitance (pF) Figure9. Gate Charge Waveforms Qg Gate Charge (nC) VDS Drain-Source Voltage (V) Transient Thermal Impedance R(t), Normalized Effective Figure11. Normalized Maximum Transient Thermal Impedance Square Wave Pluse Duration(sec) Rev.05 © 2006 Thinki Semiconductor Co., Ltd. Page 5/5 http://www.thinkisemi.com/