AR6A thru AR6M AR6A thru AR6M - Thinki Semiconductor Co.,Ltd.

AR6A thru AR6M
Pb Free Plating Product
®
Pb
AR6A thru AR6M
6.0 Ampere Glass Passivated Avalanche Rectifier Diodes
DO-201AD
Unit: inch(mm)
Features
.375(9.5)
Mechanical Data
Cases: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: Pure tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
Polarity: Color band denotes cathode
High temperature soldering guaranteed:
260 oC /10 seconds/.375”,(9.5mm) lead
lengths at 5 lbs.,(2.3kg) tension
Weight: 1.9 gram approximately
.210(5.3)
.188(4.8)
1.0(25.4)MIN.
.052(1.3)
.048(1.2)
1.0(25.4)MIN.
Glass passivated chip junction.
High efficiency, Low VF
High current capability
High reliability
High surge current capability
Low power loss
.285(7.2)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
AR6A
AR6B
AR6D
AR6F
AR6J
AR6K
AR6M
UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
300
600
800
1000
V
Maximum RMS Voltage
VRMS
35
70
140
210
420
560
700
V
VDC
50
100
200
300
600
800
1000
V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
o
Current TA=75 C
I(AV)
6.0
A
IFSM
200
A
VF
1.1
V
1.0
uA
10
uA
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 6.0 A
o
Maximum DC Reverse Current @TJ=25 C
o
At Rated DC Blocking Voltage @TJ=125 C
IR
Typical junction Capacitance (Note 1)
CJ
Typical Thermal Resistance (Note 2)
Operating Junction and Storage
Temperature Range
R
JA
TJ,TSTG
50
20
-65 to +150
pF
o
C/W
o
C
NOTES : (1) Thermal Resistance junction to ambient.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Rev.06
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
AR6A thru AR6M
®
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
6
Single PhaseHalf Wave 60Hz
Resistive of Inductive Load
Ground plane
1" x 1" Copper
surface area
PC BOARD
Recommanded
5
4
PEAK FORWARD SURGE CURRENT,
AMPERES
IFSM(A)
AVERAGE FORWARD CURRENT AMPERES
6.5
3
PC Board
PC Board
2
Mounting
1 Standard PC Board
Mounting
0
0
20
40
60
80
100
120
140
160
180
200
o
AMBIENT TEMPERATURE. ( C)
200
170
8.3ms Single Half Sine Wave
JEDEC Method
140
110
90
60
30
0
1
2
10
20
100
Number of Cycles
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
10
100
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
1.0
0.1
o
TJ=25 C
PULSE WIDTH=300uS
1% DUTY CYCLE
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
o
TJ=125 C
10
1
o
TJ=25 C
0.1
0.01
1.6
0
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, pF
1000
o
TJ = 25 C
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0
10
100
REVERSE VOLTAGE, VOLTS
Rev.06
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/2
http://www.thinkisemi.com/