MUR1605 thru MUR1660 ® Pb MUR1605 thru MUR1660 Pb Free Plating Product 16.0 Amp.Glass Passivated Ultra Fast Recovery Rectifiers TO-220AC Features ¬ Fast switching for high efficiency ¬ Low forward voltage drop ¬ High current capability ¬ Low reverse leakage current ¬ High surge current capability Mechanical Data ¬ Case: Molded TO-220AC ¬ Epoxy: UL 94V-0 rate flame retardant ¬ Terminals: Solderable per MIL-STD-202 method 208 ¬ Polarity:Color band denotes cathode ¬ Mounting position: Any ¬ Weight: 2.03 grams Unit : inch (mm) 2 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25℃ ambient temperature unless otherwise specified. Single phase, half wave ,60Hz, resistive or inductive load. For capacitive load, derate current by 20% Maximum Recurrent Peak Reverse Voltage VRRM MUR 1605 50 Maximum RMS Voltage VRMS 35 70 105 140 210 280 420 V VDC 50 100 150 200 300 400 600 V CHARACTERISTICS Maximum DC Blocking Voltage Maximum Average Forward Rectified Current @TA =75 ℃ SYMBOL MUR 1610 100 MUR 1615 150 MUR 1620 200 MUR 1630 300 MUR 1640 400 MUR 1660 600 UNIT V I(AV) 16.0 A IFSM 300 A Peak Forward Surge Current 8.3ms Single Half Sine-Wave Super Imposed on Rated Load(JEDEC Method) Peak Forward Voltage at 16.0A DC Maximum DC Reverse Current @TJ=25℃ at Rated DC Blocking Voltage @TJ=100℃ Maximum Reverse Recovery Time(Note1) Typical Junction Capacitance (Note2) Typical Thermal Resistance (Note3) Operating and Storage Temperature Range VF IR 0.95 1.3 10 150 1.7 V μA TRR 35 nS CJ 80 pF RθJA 2.5 ℃/W TJ,TSTG -55 to + 150 ℃ NOTES:1.Measured with IF=0.5A,IR=1A,IRR=0.25A 2.Measured at 1.0 MHZ and applied reverse voltage of 4.0VDC. 3.Thermal resistance junction to ambient Page 1/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ MUR1605 thru MUR1660 ® RATING AND CHARACTERTIC CURVES (MUR1605 thru MUR1660) FIG.2-TYPICAL REVERSE CHARACTERISTICS 1000 16 12 SINGLE PHASE HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD 8 INSTANTANEOUS REVERSE CURRENT(uA) AVERAGE FORWARD CURRENT,(A) FIG.1- TYPICAL FORWARD CURRENT DERATING CURVE 20 4 0 0 50 150 100 AMBIENT TEMPERATURE ℃ PEAK FORWARD SURGE CURRENT,(A) FIG.3-MAXIMUM NON-REPETITVE FORWARD SURGE CURRENT 300 250 TJ=100°C 100 10 TJ=25°C 1.0 200 0.1 20 150 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE(%) 100 8.3 ms Single Half-Sine-Wave (JEDEC METOD) 50 0 1 2 10 20 5 5 NUMBER OF CYCLES AT 60HZ 50 100 FIG.4-TYPICAL INSTANTAEOUS FORWARD CHARACTERISTICS FIG.5-TYPICAL JUNCTION CAPACITANCE 200 MUR1605 MUR1620 20 100 JUNCTION CAPACITANCE(pF) INSTANTANEOUS FORWARD CURRENT,(A) 40 MUR1660 10 4 2 MUR1603 MUR1604 1.0 0.4 T J=25°C PULSE WIDTH 300uS 1% DUTY CYCLE 0.2 20 10 TJ=25°C 4 2 1 0.1 0.6 40 0.8 1.0 1.2 1.4 1.6 1.8 2.0 INSTANTANEOUS FORWARD VOLTAGE, (V) 0.1 0.2 0.4 1 2 4 10 20 40 100 REVERSE VOLTAGE,(V) Page 2/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/