MURF820 thru MURF880 - Thinki Semiconductor Co.,Ltd.

MURF820 thru MURF880
®
Pb
MURF820 thru MURF880
Pb Free Plating Product
8.0 Ampere Insulated Glass Passivated Ultra Fast Recovery Rectifiers
Unit : inch (mm)
ITO-220AC
Feature
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
.419(10.66)
.387(9.85)
.196(5.00)
.163(4.16)
.167(3.73)
.122(3.10)
.118(3.00)
.226(5.75)
.624(15.87)
.548(13.93)
.269(6.85)
.079(2.00)
Application
.177(4.5)MAX
Mechanical Data
Case: Molded plastic Isolated/Insulated ITO-220AC
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.03 grams approximately
.50(12.7)MIN
Switching mode power supply
Inverter/converter
TV receiver,monitor/set top box
.038(0.96)
.019(0.50)
.025(0.65)MAX
.1(2.54)
.1(2.54)
MUR series with TO-220AC(Heatsink) package
MURF series with ITO-220AC(Insulated) package
MURS series with TO-263AB(D2PAK) package
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MURF820 MURF840 MURF860 MURF880
UNIT
Maximum recurrent peak reverse voltage
VRRM
200
400
600
800
V
Maximum RMS voltage
VRMS
140
280
420
560
V
Maximum DC blocking voltage
VDC
200
400
600
800
V
Maximum average forward rectified current at TC = 100 °C
IF(AV)
8.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
100
A
Maximum slope of reverse recovery current
IF = 2.0 A, VR = 30 V, dI/dt = 20 µs
dI/dt
60
A/μs
TJ, TSTG
- 40 to + 150
°C
VAC
1500
V
Operating junction and storage temperature range
Isolation voltage (ITO-220AC only)
from terminal to heatsink t = 1 min
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
TEST CONDITIONS
PARAMETER
Maximum instantaneous forward
voltage (1)
8.0 A
SYMBOL
VF
Maximum DC reverse current at
rated DC blocking voltage
TJ = 25 °C
TJ = 125 °C
IR
Maximum reverse recovery time
IF = 1.0 A, VR = 30 V,
dI/dt = 50 A/µs, Irr = 10 % IRM
trr
Maximum recovered stored charge
IF = 2.0 A, VR = 30 V,
dI/dt = 20 A/µs
Qrr
MURF820 MURF840 MURF860 MURF880
0.98
1.3
1.7
1.8
10
250
UNIT
V
µA
35
50
700
ns
nC
Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
SYMBOL
MUR series
Typical thermal resistance from junction to case
RθJC
2.0
4.8
2.0
°C/W
Typical thermal resistance from junction to air
RθJA
20
-
20
°C/W
PARAMETER
MURF series MURS series UNIT
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
MURF820 thru MURF880
®
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
1000
Resistive or Inductive Load
Instantaneous Reverse Leakage
Current (µA)
Average Forward Rectified Current (A)
12
10
8
6
4
2
0
TJ = 125 °C
TJ = 100 °C
10
1
TJ = 25 °C
0.1
0.01
0
25
50
100
75
125
0
150
20
40
60
80
100
Case Ambient Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Figure 1. Forward Current Derating Curve
Figure 4. Typical Reverse Leakage Characteristics
150
100
TL = 75 °C
8.3 ms Single Half Sine-Wave
125
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Junction Capacitance (pF)
Peak Forward Surge Current (A)
TJ = 150 °C
100
100
75
50
25
10
0
100
10
1
1
10
Number of Cycles at 60 Hz
Reverse Voltage (V)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Figure 5. Typical Junction Capacitance
100
Instantaneous Forward Current (A)
100
TJ = 150 °C
10
TJ = 25 °C
TJ = 100 °C
1
TJ = 125 °C
Pulse Width = 300 µs
1 % Duty Cycle
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Page 2/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/