MURF820 thru MURF880 ® Pb MURF820 thru MURF880 Pb Free Plating Product 8.0 Ampere Insulated Glass Passivated Ultra Fast Recovery Rectifiers Unit : inch (mm) ITO-220AC Feature Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability .419(10.66) .387(9.85) .196(5.00) .163(4.16) .167(3.73) .122(3.10) .118(3.00) .226(5.75) .624(15.87) .548(13.93) .269(6.85) .079(2.00) Application .177(4.5)MAX Mechanical Data Case: Molded plastic Isolated/Insulated ITO-220AC Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity: As marked on diode body Mounting position: Any Weight: 2.03 grams approximately .50(12.7)MIN Switching mode power supply Inverter/converter TV receiver,monitor/set top box .038(0.96) .019(0.50) .025(0.65)MAX .1(2.54) .1(2.54) MUR series with TO-220AC(Heatsink) package MURF series with ITO-220AC(Insulated) package MURS series with TO-263AB(D2PAK) package MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MURF820 MURF840 MURF860 MURF880 UNIT Maximum recurrent peak reverse voltage VRRM 200 400 600 800 V Maximum RMS voltage VRMS 140 280 420 560 V Maximum DC blocking voltage VDC 200 400 600 800 V Maximum average forward rectified current at TC = 100 °C IF(AV) 8.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 100 A Maximum slope of reverse recovery current IF = 2.0 A, VR = 30 V, dI/dt = 20 µs dI/dt 60 A/μs TJ, TSTG - 40 to + 150 °C VAC 1500 V Operating junction and storage temperature range Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) TEST CONDITIONS PARAMETER Maximum instantaneous forward voltage (1) 8.0 A SYMBOL VF Maximum DC reverse current at rated DC blocking voltage TJ = 25 °C TJ = 125 °C IR Maximum reverse recovery time IF = 1.0 A, VR = 30 V, dI/dt = 50 A/µs, Irr = 10 % IRM trr Maximum recovered stored charge IF = 2.0 A, VR = 30 V, dI/dt = 20 A/µs Qrr MURF820 MURF840 MURF860 MURF880 0.98 1.3 1.7 1.8 10 250 UNIT V µA 35 50 700 ns nC Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) SYMBOL MUR series Typical thermal resistance from junction to case RθJC 2.0 4.8 2.0 °C/W Typical thermal resistance from junction to air RθJA 20 - 20 °C/W PARAMETER MURF series MURS series UNIT Page 1/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ MURF820 thru MURF880 ® RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1000 Resistive or Inductive Load Instantaneous Reverse Leakage Current (µA) Average Forward Rectified Current (A) 12 10 8 6 4 2 0 TJ = 125 °C TJ = 100 °C 10 1 TJ = 25 °C 0.1 0.01 0 25 50 100 75 125 0 150 20 40 60 80 100 Case Ambient Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Figure 1. Forward Current Derating Curve Figure 4. Typical Reverse Leakage Characteristics 150 100 TL = 75 °C 8.3 ms Single Half Sine-Wave 125 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Junction Capacitance (pF) Peak Forward Surge Current (A) TJ = 150 °C 100 100 75 50 25 10 0 100 10 1 1 10 Number of Cycles at 60 Hz Reverse Voltage (V) Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Figure 5. Typical Junction Capacitance 100 Instantaneous Forward Current (A) 100 TJ = 150 °C 10 TJ = 25 °C TJ = 100 °C 1 TJ = 125 °C Pulse Width = 300 µs 1 % Duty Cycle 0.1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Instantaneous Forward Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Page 2/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/