BY229200 thru BY229800 - Thinki Semiconductor Co.,Ltd.

BY229200 thru BY229800
®
Pb
BY229200 thru BY229800
Pb Free Plating Product
8.0 Ampere Heatsink Glass Passivated Ultra Fast Recovery Rectifiers
Unit : inch (mm)
TO-220AC
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Switching mode power supply
Inverter/converter
TV receiver,monitor/set top box
Mechanical Data
Case:TO-220AC Heatsink Package
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diodes body
Mounting position: Any
Weight: 2.03 grams approximately
BY229 series with TO-220AC(Heatsink) pkg
BY229X series with ITO-220AC(Insulated) pkg
BY229B series with TO-263AB(D2PAK) pkg
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
BY229200
BY229-200
BY229400
BY229-400
BY229600
BY229600
BY229800
BY229-800
UNIT
Maximum recurrent peak reverse voltage
VRRM
200
400
600
800
V
Maximum RMS voltage
VRMS
140
280
420
560
V
Maximum DC blocking voltage
VDC
200
400
600
800
V
Maximum average forward rectified current at TC = 100 °C
IF(AV)
8.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
100
A
Maximum slope of reverse recovery current
IF = 2.0 A, VR = 30 V, dI/dt = 20 µs
dI/dt
60
A/μs
TJ, TSTG
- 40 to + 150
°C
VAC
1500
V
Operating junction and storage temperature range
Isolation voltage (ITO-220AC only)
from terminal to heatsink t = 1 min
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
TEST CONDITIONS
PARAMETER
Maximum instantaneous forward
voltage (1)
8.0 A
SYMBOL
VF
Maximum DC reverse current at
rated DC blocking voltage
TJ = 25 °C
TJ = 125 °C
IR
Maximum reverse recovery time
IF = 1.0 A, VR = 30 V,
dI/dt = 50 A/µs, Irr = 10 % IRM
trr
Maximum recovered stored charge
IF = 2.0 A, VR = 30 V,
dI/dt = 20 A/µs
Qrr
BY229200
BY229-200
BY229400
BY229-400
0.98
BY229800
BY229600
BY229-600
BY229-800
UNIT
1.7
1.8
V
1.3
10
250
µA
35
50
700
ns
nC
Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
BY229 series
BY229X series
BY229B series
UNIT
Typical thermal resistance from junction to case
RθJC
2.0
4.8
2.0
°C/W
Typical thermal resistance from junction to air
RθJA
20
-
20
°C/W
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
BY229200 thru BY229800
®
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
1000
Resistive or Inductive Load
Instantaneous Reverse Leakage
Current (µA)
Average Forward Rectified Current (A)
12
10
8
6
4
2
0
TJ = 125 °C
TJ = 100 °C
10
1
TJ = 25 °C
0.1
0.01
0
25
50
100
75
125
0
150
20
40
60
80
100
Case Ambient Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Figure 1. Forward Current Derating Curve
Figure 4. Typical Reverse Leakage Characteristics
150
100
TL = 75 °C
8.3 ms Single Half Sine-Wave
125
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Junction Capacitance (pF)
Peak Forward Surge Current (A)
TJ = 150 °C
100
100
75
50
25
10
0
100
10
1
1
10
Number of Cycles at 60 Hz
Reverse Voltage (V)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Figure 5. Typical Junction Capacitance
100
Instantaneous Forward Current (A)
100
TJ = 150 °C
10
TJ = 25 °C
TJ = 100 °C
1
TJ = 125 °C
Pulse Width = 300 µs
1 % Duty Cycle
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Page 2/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/