MUR880E MUR880E - Thinki Semiconductor Co.,Ltd.

MUR880E
®
Pb Free Plating Product
Pb
MUR880E
8 Ampere,800 Volt Epitaxial Type Ultra Fast Recovery Rectifier Diode
TO-220AC
Features
‘ Fast switching for high efficiency
‘ Low forward voltage drop
‘ High current capability
‘ Low reverse leakage current
‘ High surge current capability
Mechanical Data
‘ Case: TO-220C-2P Heatsink
‘ Epoxy: UL 94V-0 rate flame retardant
‘ Terminals: Solderable per MIL-STD-202
method 208
‘ Polarity:Color band denotes cathode
‘ Mounting position: Any
‘ Weight: 2.05 gram approximately
Unit: mm
2
Maximum Ratings and Electrical Characteristics
Rating at 25 к ambient temperature unless otherwise specified.
Parameter
Symbol
MUR880E
Units
Maximum Recurrent Peak Reverse Voltage
VRRM
800
V
Maximum RMS Voltage
VRMS
560
V
Maximum DC Blocking Voltage
VDC
800
V
Maximum Average Forward Rectified Current
IF(AV)
8
A
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
IFSM
100
A
VF
1.8
V
Maximum Instantaneous Forward Voltage (Note 1)
@8A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@ TA=25 к
@ TA=125 к
IR
5
100
uA
Maximum Reverse Recovery Time (Note 2)
Trr
40
nS
Typical Junction Capacitance (Note 3)
Cj
50
RθJC
1.5
pF
к/W
TJ
- 55 to + 150
к
TSTG
- 55 to + 150
к
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
MUR880E
®
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
1000
Resistive or Inductive Load
Instantaneous Reverse Leakage
Current (μA)
Average Forward Rectified Current (A)
12
10
8
6
4
2
0
TJ = 125 °C
TJ = 100 °C
10
TJ = 25 °C
5
0.01
0
25
50
100
75
125
0
150
20
40
60
80
100
Case Ambient Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Figure 1. Forward Current Derating Curve
Figure 4. Typical Reverse Leakage Characteristics
150
100
TL = 75 °C
8.3 ms Single Half Sine-Wave
125
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Junction Capacitance (pF)
Peak Forward Surge Current (A)
TJ = 150 °C
100
100
75
50
25
10
0
100
10
1
1
10
Number of Cycles at 60 Hz
Reverse Voltage (V)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Figure 5. Typical Junction Capacitance
100
Instantaneous Forward Current (A)
100
TJ = 150 °C
10
TJ = 25 °C
TJ = 100 °C
1
TJ = 125 °C
Pulse Width = 300 μs
1 % Duty Cycle
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/2
http://www.thinkisemi.com/