MUR880E ® Pb Free Plating Product Pb MUR880E 8 Ampere,800 Volt Epitaxial Type Ultra Fast Recovery Rectifier Diode TO-220AC Features Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability Mechanical Data Case: TO-220C-2P Heatsink Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity:Color band denotes cathode Mounting position: Any Weight: 2.05 gram approximately Unit: mm 2 Maximum Ratings and Electrical Characteristics Rating at 25 к ambient temperature unless otherwise specified. Parameter Symbol MUR880E Units Maximum Recurrent Peak Reverse Voltage VRRM 800 V Maximum RMS Voltage VRMS 560 V Maximum DC Blocking Voltage VDC 800 V Maximum Average Forward Rectified Current IF(AV) 8 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) IFSM 100 A VF 1.8 V Maximum Instantaneous Forward Voltage (Note 1) @8A Maximum DC Reverse Current at Rated DC Blocking Voltage @ TA=25 к @ TA=125 к IR 5 100 uA Maximum Reverse Recovery Time (Note 2) Trr 40 nS Typical Junction Capacitance (Note 3) Cj 50 RθJC 1.5 pF к/W TJ - 55 to + 150 к TSTG - 55 to + 150 к Typical Thermal Resistance Operating Temperature Range Storage Temperature Range Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Rev.05 © 2006 Thinki Semiconductor Co.,Ltd. Page 1/2 http://www.thinkisemi.com/ MUR880E ® RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1000 Resistive or Inductive Load Instantaneous Reverse Leakage Current (μA) Average Forward Rectified Current (A) 12 10 8 6 4 2 0 TJ = 125 °C TJ = 100 °C 10 TJ = 25 °C 5 0.01 0 25 50 100 75 125 0 150 20 40 60 80 100 Case Ambient Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Figure 1. Forward Current Derating Curve Figure 4. Typical Reverse Leakage Characteristics 150 100 TL = 75 °C 8.3 ms Single Half Sine-Wave 125 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Junction Capacitance (pF) Peak Forward Surge Current (A) TJ = 150 °C 100 100 75 50 25 10 0 100 10 1 1 10 Number of Cycles at 60 Hz Reverse Voltage (V) Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Figure 5. Typical Junction Capacitance 100 Instantaneous Forward Current (A) 100 TJ = 150 °C 10 TJ = 25 °C TJ = 100 °C 1 TJ = 125 °C Pulse Width = 300 μs 1 % Duty Cycle 0.1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Instantaneous Forward Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Rev.05 © 2006 Thinki Semiconductor Co.,Ltd. Page 2/2 http://www.thinkisemi.com/