SK15GH063 $ 3 10 4! Absolute Maximum Ratings Symbol Conditions IGBT 5-" $6 3 10 4 & $6 3 910 4 &=> IGBT Module SK15GH063 .88 5 18 : $ 3 ;8 4 9< : /8 : ? 18 5 $6 3 910 4 98 C $ 3 10 4 18 : $ 3 ;8 4 90 : 1; : 988 : &=>3 1 & 5 3 /88 5@ 5'- A 18 5@ 5-" B .88 5 Units $ 3 10 4 5'-" SEMITOP® 2 Values Inverse Diode &D $6 3 908 4 &D=> &D=>3 1 &D &D"> 3 98 @ 2 $6 3 908 4 Module &=>" Preliminary Data : $26 $ Features ! " #$% &'$ ( ) *) +! , -./ 0/1 Typical Applications* " &2 " *#" 5 :! 9 , 5'- 3 5-! & 3 8!< : &-" 5'- 3 8 5! 5- 3 5-" 4 %<8 ,,, E910 4 1088 5 $ 3 10 4! Characteristics Symbol Conditions IGBT 5'- %<8 ,,, E908 min. typ. <!0 0!0 $6 3 10 4 max. .!0 5 8!80 : $6 3 910 4 &'-" 5- 3 8 5! 5'- 3 18 5 : $6 3 10 4 918 $6 3 910 4 5-8 - $6 3 10 4 5'- 3 90 5 & 3 90 :! 5'- 3 90 5 5 $6 3 910 4 9 5 $6 3 104 0/ F $6 3 104 2, F 1 1!0 $6 3 9104 2, 5- 3 10! 5'- 3 8 5 =' 3 .; F =' 3 .; F - =6% &'$ 5 3 /885 &3 90: $6 3 910 4 5'-3?905 5 5 8!; D D 8!8. D /0 08 8!G9 108 18 H 8!< H 3 9 >+ - : : 9!1 $6 3 9104 5- Units 9!I JKL GH 1 17-11-2006 DIL © by SEMIKRON SK15GH063 Characteristics Symbol Conditions Inverse Diode 5D 3 5- SEMITOP® 2 IGBT Module &D 3 98 :@ 5'- 3 8 5 min. $6 3 10 4 2, typ. max. Units 9!<0 9!G 5 $6 3 910 4 2, 9!< 9!G 5 5D8 $6 3 910 4 8!;0 8!I 5 D $6 3 910 4 00 ;8 F $6 3 910 4 9/ 9!0 : C 8!<0 H &==> M &D 3 98 : K 3 %188 :KC - 53 /885 =6% 9!1 > N >9 1 9I JKL SK15GH063 Preliminary Data Features This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. ! " #$% &'$ ( ) *) +! , -./ 0/1 Typical Applications* " &2 " *#" GH 2 17-11-2006 DIL © by SEMIKRON SK15GH063 Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 6 Typ. gate charge characteristic 3 17-11-2006 DIL © by SEMIKRON SK15GH063 Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 10 CAL diode forward characteristic 4 17-11-2006 DIL © by SEMIKRON SK15GH063 UL recognized file no. E 63 532 $0 " ! #! O 1 $0 5 ' 17-11-2006 DIL © by SEMIKRON