SK80GB125T ( ) *+ ,- Absolute Maximum Ratings Symbol Conditions IGBT ./# (0 ) *+ , $ (0 ) 2*+ , $56 2*33 . 4+ ( ) 43 , ++ 2+3 9 *3 . (0 ) 2*+ , 23 ? ( ) *+ , A3 ( ) 43 , >3 $56) * 7 $ . ) :33 .; .8/ < *3 .; ./# = >33 . Units ( ) *+ , .8/# SEMITOP® 3 Values Inverse Diode IGBT Module SK80GB125T $@ (0 ) 2+3 , $@56 $@56) * 7 $@ $@#6 ) 23 ; % (0 ) 2+3 , ++3 Module $56# Preliminary Data (%0 ( Features ! " Typical Applications* # $% # &'# . - 2 D BC3 DDD E2+3 , BC3 DDD E2*+ , *+33 . ( ) *+ ,- Characteristics Symbol Conditions IGBT min. typ. max. Units C-+ +-+ >-+ . .8/ .8/ ) ./- $ ) : $/# .8/ ) 3 .- ./ ) ./# (0 ) *+ , 3-32 $8/# ./ ) 3 .- .8/ ) *3 . (0 ) *+ , C43 . ./3 / .8/ ) 2+ . ./ $ ) F+ - .8/ ) 2+ . (0 ) *+ , 2-C 2-A (0 ) 2*+ , 2-F *-* . 24-> G (0 ) *+, (0 ) 2*+, *3 G (0 ) *+, %D :-* :-: . (0 ) 2*+, %D :-4+ :-F . ) 2 6H +-2 3-F* @ @ 3-:4 @ / 243 223 A-A :+4 *> I + I ./ ) *+- .8/ ) 3 . 58 ) 4-* G 58 ) 4-* G / 50B $8( . ) >33. $) 43 (0 ) 2*+ , .8/)92+. 3-:* JKL GB - T 1 09-06-2009 DIL © by SEMIKRON SK80GB125T Characteristics Symbol Conditions Inverse Diode .@ ) ./ $@ ) ++ ; .8/ ) 3 . .@3 min. . (0 ) 2+3 , %D 2-4 . . IGBT Module SK80GB125T 2-* . (0 ) *+ , $556 M $@ ) +3 K ) B433 K? / .) >33. 50B 6 N Units * (0 ) *+ , @ SEMITOP 3 max. (0 ) *+ , %D (0 ) 2*+ , ® typ. G (0 ) 2*+ , 22 G (0 ) 2*+ , C3 4 ? 2 I *-*+ 3->+ JKL *-+ :3 CA:9+O G Temperature sensor 5233 ()233, 5*+)+NG Preliminary Data Features ! " This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. Typical Applications* # $% # &'# GB - T 2 09-06-2009 DIL © by SEMIKRON SK80GB125T Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 6 Typ. gate charge characteristic 3 09-06-2009 DIL © by SEMIKRON SK80GB125T Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 10 CAL diode forward characteristic 4 09-06-2009 DIL © by SEMIKRON SK80GB125T UL recognized file no. E 63 532 (F: # - '- P * ( F: 5 8B( 09-06-2009 DIL © by SEMIKRON