SEMIKRON SK80GB125T_09

SK80GB125T
( ) *+ ,- Absolute Maximum Ratings
Symbol Conditions
IGBT
./#
(0 ) *+ ,
$
(0 ) 2*+ ,
$56
2*33
.
4+
( ) 43 ,
++
2+3
9 *3
.
(0 ) 2*+ ,
23
?
( ) *+ ,
A3
( ) 43 ,
>3
$56) * 7 $
. ) :33 .; .8/ < *3 .;
./# = >33 .
Units
( ) *+ ,
.8/#
SEMITOP® 3
Values
Inverse Diode
IGBT Module
SK80GB125T
$@
(0 ) 2+3 ,
$@56
$@56) * 7 $@
$@#6
) 23 ; %
(0 ) 2+3 ,
++3
Module
$56#
Preliminary Data
(%0
(
Features
!
" Typical Applications*
#
$%
#
&'#
.
- 2 D
BC3 DDD E2+3
,
BC3 DDD E2*+
,
*+33
.
( ) *+ ,- Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Units
C-+
+-+
>-+
.
.8/
.8/ ) ./- $ ) : $/#
.8/ ) 3 .- ./ ) ./#
(0 ) *+ ,
3-32
$8/#
./ ) 3 .- .8/ ) *3 .
(0 ) *+ ,
C43
.
./3
/
.8/ ) 2+ .
./
$ ) F+ - .8/ ) 2+ .
(0 ) *+ ,
2-C
2-A
(0 ) 2*+ ,
2-F
*-*
.
24->
G
(0 ) *+,
(0 ) 2*+,
*3
G
(0 ) *+,
%D
:-*
:-:
.
(0 ) 2*+,
%D
:-4+
:-F
.
) 2 6H
+-2
3-F*
@
@
3-:4
@
/
243
223
A-A
:+4
*>
I
+
I
./ ) *+- .8/ ) 3 .
58 ) 4-* G
58 ) 4-* G
/
50B
$8(
. ) >33.
$) 43
(0 ) 2*+ ,
.8/)92+.
3-:*
JKL
GB - T
1
09-06-2009 DIL
© by SEMIKRON
SK80GB125T
Characteristics
Symbol Conditions
Inverse Diode
.@ ) ./
$@ ) ++ ; .8/ ) 3 .
.@3
min.
.
(0 ) 2+3 ,
%D
2-4
.
.
IGBT Module
SK80GB125T
2-*
.
(0 ) *+ ,
$556
M
$@ ) +3 K ) B433 K?
/
.) >33.
50B 6
N
Units
*
(0 ) *+ ,
@
SEMITOP 3
max.
(0 ) *+ ,
%D
(0 ) 2*+ ,
®
typ.
G
(0 ) 2*+ ,
22
G
(0 ) 2*+ ,
C3
4
?
2
I
*-*+
3->+
JKL
*-+
:3
CA:9+O
G
Temperature sensor
5233
()233, 5*+)+NG
Preliminary Data
Features
!
" This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
Typical Applications*
#
$%
#
&'#
GB - T
2
09-06-2009 DIL
© by SEMIKRON
SK80GB125T
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
09-06-2009 DIL
© by SEMIKRON
SK80GB125T
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
09-06-2009 DIL
© by SEMIKRON
SK80GB125T
UL recognized file
no. E 63 532
(F: # - '- P *
( F:
5
8B(
09-06-2009 DIL
© by SEMIKRON