SKiM455GD12T4D1

SKiM455GD12T4D1
,- .1 ! "'
Absolute Maximum Ratings
Symbol Conditions
IGBT
*
0 .
0 +-2 .
%7
+,22
22
&
4 52 .
62-
&
+6-2
&
: ,2
+2
?
4 ,- .
,A-
&
4 52 .
,+-
&
B22
&
%7 6/897
Trench IGBT modules
SKiM455GD12T4D1
;22 < = +- <
* > +,22 Units
4 ,- .
*
SKiM® 5
Values
0 +-2 .
Inverse Diode
@
0 +-2 .
@%7
@%7 , / @897
Module
%7*
Preliminary Data
0
C2 DDD E+-2
.
C2 DDD E+,-
.
,-22
Features
!
""
# ! $
Typical Applications*
# %$ & '
()*
Remarks
! ' +,-.
01
/
+-2.
/
" '' ' &
&1 +
D
,- .1 ! "'
Characteristics
Symbol Conditions
IGBT
1 +;
*
2 1 *
2
+- min.
typ.
max.
Units
-
-1;
B1-
0 ,- .
21;
21A
0 +,- .
215
21;
0 ,-.
,1,
,1
0 +,-.
61+
616
+1;
,
0 +,-.D
,1+
,16
" + 7#G
,51A
+15
@
@
+1-
@
,B22
&
0 ,- .
-2 &1 +- 0 ,-.D
,-1 2 216
&
F
F
H
C;IE+-
%
0 ,- .
+15
J
% + F
'I' ;,22 &I?
%"" + F
'I' -622 &I?
,BB2
6
52
B-
K
2
K
'
'""
"
""
%0C
B22
-2&
0 +,- .
: +-
21+
LIM
GD
1
03-03-2008 LAN
© by SEMIKRON
SKiM455GD12T4D1
Characteristics
Symbol Conditions
Inverse Diode
@ @ -2 &< 2 @2
@
®
SKiM 5
Trench IGBT modules
min.
typ.
max.
Units
0 ,- .D
,16
,1;
0 +,- .D
,1,
,15
0 ,- .
+1,
+1B
0 +,- .
21A
+16
0 ,- .
,16
,15
0 +,- .
,1;
61+
F
0 +,- .
-22
B1-
&
?
F
%%7
H
@ -2 &
'I' A222 &I?
C+-
,51;
K
%0C
''
21+A
LIM
Module
SKiM455GD12T4D1
Preliminary Data
N
,2
%OEO
D1 C
7
4 7-
7
7B
,- .
21A
F
+,- .
+1+
F
8
-
Features
!
""
# ! $
Typical Applications*
# %$ & '
()*
Remarks
! ' +,-.
01
/
+-2.
/
" '' ' #
B2
8
Temperature sensor
%*
,- +22.
+ +1B5
4F
,- +22.
6 ,
P
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
GD
2
03-03-2008 LAN
© by SEMIKRON
SKiM455GD12T4D1
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
3
03-03-2008 LAN
© by SEMIKRON
SKiM455GD12T4D1
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode reverse recovery charge
4
03-03-2008 LAN
© by SEMIKRON
SKiM455GD12T4D1
UL recognized file
*L7 -
5
no. E 63 532
Q
03-03-2008 LAN
© by SEMIKRON