SKM 400GA128D )/1" ' Absolute Maximum Ratings Symbol Conditions IGBT 2 )/ 1 % 2 0/* 1 %67 0)** /#/ & 4* 1 5** & #** & 9 )* 0* < )/ 1 >?* & 4* 1 )#* & #** & )?** & /** & 5*@@@ C 0/* 1 5*@@@ C 0)/ 1 5*** %67)$% SPT IGBT Modules SKM 400GA128D #** : 8 . )* : ; 0)** Units )/ 1 8 SEMITRANS® 4 Values 2 0)/ 1 Inverse Diode %= 2 0/* 1 %=67 %=67)$%= %=7 0* : @ 2 0/* 1 Module %A67B 2 Features !" # $ % Typical Applications* & ' ( ' )* + , Remarks %- . /** & 0** 1 &" 0 @ )/1" ' Characteristics Symbol Conditions IGBT 8AB 8 " % 0) & % 8 * " * AB 8 0/ typ. max. Units 5"/ /"/ #"5/ 2 )/ 1 *") *"# & 2 )/ 1 0 0"0/ 2 0)/ 1 *"? 0"*/ 2 )/1 > 5 D 2 0)/1 5 / D 0"? )">/ 2 0)/1@ )"0 )"// 07 , )# > = = > = % >** &" 8 0/ 2 )/1@ )/" 8 * min. E8 8 4 C)* >/** 68 2 1 0")/ F 0)* G* >0 4** G/ H >> H 'AB 'A B 68 / D 68 / D 6A2B %8I #** % >**& 2 0)/ 1 8 90/ *"*// JKL GA 1 11-09-2006 SEN © by SEMIKRON SKM 400GA128D Characteristics Symbol Conditions Inverse Diode = SEMITRANS® 4 SPT IGBT Modules %= >** &: 8 * min. typ. max. Units 2 )/ 1@ ) )"/ 2 0)/ 1@ 0"4 =* 2 )/ 1 0"0 0") = 2 )/ 1 > 5"> D 2 0)/ 1 >5/ 54 & < )* H %667 E %= >** & 'K' /)** &K< 8 0/ : #** 6A2B- '' *"0)/ JKL Module M 6NCN 0/ @" SKM 400GA128D 6AB ' 7 + 7# 7 7# A75B )* )/ 1 *"04 D 0)/ 1 *")) D *"*>4 JKL > / O )"/ A0"0B / A)B O >>* Features !" # $ % Typical Applications* & ' ( ' )* This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. + , Remarks %- . /** & 0** 1 GA 2 11-09-2006 SEN © by SEMIKRON SKM 400GA128D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 3 11-09-2006 SEN © by SEMIKRON SKM 400GA128D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance Fig. 10 CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode peak reverse recovery charge 4 11-09-2006 SEN © by SEMIKRON SKM 400GA128D UL Recognized File 63 532 - /? 8& 5 - /? 11-09-2006 SEN © by SEMIKRON