SKM 600GB066D Absolute Maximum Ratings Symbol Conditions IGBT ) 3 ,- . $ 3 +?- . ,-.! & "11 ?"1 % @1 . -?1 % @11 % B,1 3 +-1 . " 6 ,- . ?11 % @1 . -+1 % @11 % -11 % 3 / 01 2 +?- . / 01 2 +,- . 0111 $:A+!99#$ 8) Trench IGBT Modules 9"1 7 8 4 +- 7 ) C "11 Inverse Diode $D 3 +?- . $D:A SKM 600GB066D $D:A+!99#$D Module $:A) Features ! " # $ Typical Applications* % & '() & Remarks * &* +,-.! * /01 *** 2+-1.! & * & 34+-1. ) &5 4 "67 8 4 +-7 3 +-1.7 4 9"1! :8 ; < / & &* $=4-11% +11. Units ,- . $:A SEMITRANS® 3 Values %! + * Characteristics Symbol Conditions IGBT 8 8 ! $ E!" % $) 8 1 ! ) 1 8 +- ,-.! & min. typ. max. Units - -!@ "!- 3 ,- . 1!9 1!E % 3 ,- . 1!E + 3 +-1 . 1!@- 1!E 3 ,-. 1!E +!- F 3 +-1. +!0 , F +!0- +!E 3 +-1. * +!? ,!+ + AG 9? ,!9 D D +!+ D 0011 $ "11 %! 8 +- 3 ,-. * ,-! 8 1 H8 8 /@***2+- :8 3 . & & :8 +!- I :8 +!- F : 3/ $8L 911 $ "11% 3 +-1 . 8 /@K2+- 1!- I ,?1 ?? ?!"?1 ?? J ,E!- J 1!1@ MKN GB 1 06-10-2009 NOS © by SEMIKRON SKM 600GB066D Characteristics Symbol Conditions Inverse Diode D $D "11 %7 8 1 D1 D SEMITRANS® 3 Trench IGBT Modules $::A H $D "11 % &K& @"11 %K6 8 /@ 7 911 : 3/= && typ. max. Units 3 ,- . * +!0 +!" 3 ,- . 1!E- + 3 ,- . 1!@ + F 3 +-1 . -@1 +1- % 6 ,- J 1!+,- MKN Module O :P2P SKM 600GB066D min. +*! / ,1 ,- . 1!9- F +,- . 1!- F : / & 1!19@ MKN A < A" 9 - Q A A" ,!- - Q 9,- Features This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. ! " # $ Typical Applications* % & '() & Remarks * &* +,-.! * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. * /01 *** 2+-1.! & * & 34+-1. ) &5 4 "67 8 4 +-7 3 +-1.7 4 9"1! :8 ; < / & &* $=4-11% +11. GB 2 06-10-2009 NOS © by SEMIKRON SKM 600GB066D SEMITRANS® 3 Zth Symbol Zth(j-c)l Conditions Values Units : : : : + , 9 0 + , 9 0@!0 +E!9!+ 0 1!1-0 1!1+00 1!11+, <KN <KN <KN <KN 0 1!11," : : : : + , 9 0 + , 9 @1 99 +1!+!1!1-0 1!1+ 1!111? <KN <KN <KN <KN 0 1!11+E Zth(j-c)D Trench IGBT Modules SKM 600GB066D Features ! " # $ Typical Applications* % & '() & Remarks * &* +,-.! * /01 *** 2+-1.! & * & 34+-1. ) &5 4 "67 8 4 +-7 3 +-1.7 4 9"1! :8 ; < / & &* $=4-11% +11. GB 3 06-10-2009 NOS © by SEMIKRON SKM 600GB066D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 4 06-10-2009 NOS © by SEMIKRON SKM 600GB066D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT and Diode Fig. 10 CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovered charge 5 06-10-2009 NOS © by SEMIKRON SKM 600GB066D UL recognized, file no. E 63 532 = -" 8L 6 =-" 06-10-2009 NOS © by SEMIKRON